M. Hehn

Nanoscale Magnetic Domains in Mesoscopic Magnets

The basic magnetic properties of three-dimensional nanostructured materials can be drastically different from those of a continuous film. High-resolution magnetic force microscopy studies of magnetic submicrometer-sized cobalt dots with geometrical dimensions comparable to the width of magnetic domains reveal a variety of intricate domain patterns controlled by the details of the dot geometry. By changing the thickness of the dots, the width of the geometrically constrained magnetic domains can be tuned. Concentric rings and spirals with vortex configurations have been stabilized, with particular incidence in the magnetization reversal process as observed in the ensemble-averaged hysteresis loops.

Engineered materials for all-optical helicity-dependent magnetic switching

The possibility of manipulating magnetic systems without applied magnetic fields have attracted growing attention over the past fifteen years. The low-power manipulation of the magnetization, preferably at ultrashort timescales, has become a fundamental challenge with implications for future magnetic information memory and storage technologies. Here we explore the optical manipulation of the magnetization in engineered magnetic materials. We demonstrate that all-optical helicity-dependent switching (AO-HDS) can be observed not only in selected rare earth-transition metal (RE-TM) alloy films but also in a much broader variety of materials, including RE-TM alloys, multilayers and heterostructures. We further show that RE-free Co-Ir-based synthetic ferrimagnetic heterostructures designed to mimic the magnetic properties of RE-TM alloys also exhibit AO-HDS. These results challenge present theories of AO-HDS and provide a pathway to engineering materials for future applications based on all-optical control of magnetic order.

All-optical control of ferromagnetic thin films and nanostructures

All-optical magnetic state switching Magneto-optical memory storage media, such as hard drives, use magnetic fields to change the magnetization of memory bits, but the process is slow. Light can often reveal information about the magnetization state of a sample, such as its field direction. Lambert et al. show that under the right circumstances, light can also switch the magnetization state of a thin ferromagnetic film. Using light pulses instead of magnetic fields led to ultrafast data memory and data storage. Science, this issue p. 1337 The all-optical control of magnetization in thin ferromagnetic films is demonstrated. The interplay of light and magnetism allowed light to be used as a probe of magnetic materials. Now the focus has shifted to use polarized light to alter or manipulate magnetism. Here, we demonstrate optical control of ferromagnetic materials ranging from magnetic thin films to multilayers and even granular films being explored for ultra-high-density magnetic recording. Our finding shows that optical control of magnetic materials is a much more general phenomenon than previously assumed and may have a major impact on data memory and storage industries through the integration of optical control of ferromagnetic bits.

High tunnel magnetoresistance in epitaxial Fe/MgO/Fe tunnel junctions

We report on spin-polarized tunneling in fully epitaxial Fe/MgO/Fe/Co tunnel junctions. By increasing the thickness of the insulating layer (tMgO), we have strongly enhanced the tunnel magnetoresistance. Values up to ∼100% at 80 K (∼67% at room temperature) have been observed with tMgO=2.5 nm. This tunnel magnetoresistance ratio, which is much larger than the one predicted by the Julliere’s model, can be understood in the framework of ab initio calculations.

The defining length scales of mesomagnetism: a review

This review is intended as an introduction to mesomagnetism, with an emphasis on what the defining length scales and their origins are. It includes a brief introduction to the mathematics of domains and domain walls before examining the domain patterns and their stability in 1D and 2D confined magnetic structures. This is followed by an investigation of the effects of size and temperature on confined magnetic structures. Then, the relationship between mesomagnetism and the developing field of spin electronics is discussed. In particular, the various types of magnetoresistance, with an emphasis on the theory and applications of giant magnetoresistance and tunnelling magnetoresistance, are studied. Single electronics are briefly examined before concluding with an outlook on future developments in mesomagnetism.

Giant spin-dependent thermoelectric effect in magnetic tunnel junctions

Thermoelectric effects in magnetic nanostructures and the so-called spin caloritronics are attracting much interest. Indeed it provides a new way to control and manipulate spin currents, which are key elements of spin-based electronics. Here we report on a giant magnetothermoelectric effect in a magnetic tunnel junction. The thermovoltage in this geometry can reach 1 mV. Moreover a magnetothermovoltage effect could be measured with ratio similar to the tunnel magnetoresistance ratio. The Seebeck coefficient can then be tuned by changing the relative magnetization orientation of the two magnetic layers in the tunnel junction. Therefore, our experiments extend the range of spintronic devices application to thermoelectricity and provide a crucial piece of information for understanding the physics of thermal spin transport.

Light-induced magnetization reversal of high-anisotropy TbCo alloy films

Magnetization reversal using circularly polarized light provides a way to control magnetization without any external magnetic field and has the potential to revolutionize magnetic data storage. However, in order to reach ultra-high density data storage, high anisotropy media providing thermal stability are needed. Here, we evidence all-optical magnetization switching for different TbxCo1−x ferrimagnetic alloy compositions using fs- and ps-laser pulses and demonstrate all-optical switching for films with anisotropy fields reaching 6 T corresponding to anisotropy constants of 3 × 106 ergs/cm3. Optical magnetization switching is observed only for alloy compositions where the compensation temperature can be reached through sample heating.

Spin tunnelling phenomena in single-crystal magnetic tunnel junction systems

A brief theoretical review points out the specific aspects of electronic transport in single-crystal magnetic tunnel junctions employing bcc(100) Fe electrodes and a MgO(100) insulating barrier. The theoretical predictions are compared to the experimental reality in both equilibrium and out-of-equilibrium regimes. For extremely small MgO thickness, we illustrate that the equilibrium tunnel transport in Fe/MgO/Fe systems leads to antiferromagnetic interactions. Artificial antiferromagnetic systems based on coupling by spin polarized tunnelling have been elaborated and studied. In the out-of-equilibrium regime and for large MgO barrier thickness, the tunnel transport validates specific spin filtering effects in terms of symmetry of the electronic Bloch function and symmetry-dependent wavefunction attenuation in the single-crystal barrier. Within this framework, we explain the experimental giant tunnel magnetoresistive effects at room temperature, up to 180%, measured in our simple or double barrier tunnel junction systems. Moreover, we illustrate that the magneto-transport properties of the junctions may be skilfully engineered by adjusting the interfacial chemical and electronic structure.

Tantalum oxide as an alternative low height tunnel barrier in magnetic junctions

Magnetic tunnel junctions with a barrier of tantalum oxide were prepared by plasma oxidation of sputter-deposited tantalum. They show magnetoresistance ratios of 2.5% at room temperature and 4% at low temperatures. The material exhibits low barrier heights of ∼0.4 eV. This makes it possible to substantially increase the barrier thickness, compared to a barrier of aluminum oxide. The resulting decrease of coupling between the ferromagnetic layers is easily seen. Tantalum oxide appears to be a candidate for use as a tunnel barrier of spin-dependent tunneling devices.

Magnetic and structural anisotropies of Co 2 FeAl Heusler alloy epitaxial thin films

This paper shows the correlation between chemical order, lattice strains, and magnetic properties of Heusler Co