S. Mangin

Engineered materials for all-optical helicity-dependent magnetic switching

The possibility of manipulating magnetic systems without applied magnetic fields have attracted growing attention over the past fifteen years. The low-power manipulation of the magnetization, preferably at ultrashort timescales, has become a fundamental challenge with implications for future magnetic information memory and storage technologies. Here we explore the optical manipulation of the magnetization in engineered magnetic materials. We demonstrate that all-optical helicity-dependent switching (AO-HDS) can be observed not only in selected rare earth-transition metal (RE-TM) alloy films but also in a much broader variety of materials, including RE-TM alloys, multilayers and heterostructures. We further show that RE-free Co-Ir-based synthetic ferrimagnetic heterostructures designed to mimic the magnetic properties of RE-TM alloys also exhibit AO-HDS. These results challenge present theories of AO-HDS and provide a pathway to engineering materials for future applications based on all-optical control of magnetic order.

All-optical control of ferromagnetic thin films and nanostructures

All-optical magnetic state switching Magneto-optical memory storage media, such as hard drives, use magnetic fields to change the magnetization of memory bits, but the process is slow. Light can often reveal information about the magnetization state of a sample, such as its field direction. Lambert et al. show that under the right circumstances, light can also switch the magnetization state of a thin ferromagnetic film. Using light pulses instead of magnetic fields led to ultrafast data memory and data storage. Science, this issue p. 1337 The all-optical control of magnetization in thin ferromagnetic films is demonstrated. The interplay of light and magnetism allowed light to be used as a probe of magnetic materials. Now the focus has shifted to use polarized light to alter or manipulate magnetism. Here, we demonstrate optical control of ferromagnetic materials ranging from magnetic thin films to multilayers and even granular films being explored for ultra-high-density magnetic recording. Our finding shows that optical control of magnetic materials is a much more general phenomenon than previously assumed and may have a major impact on data memory and storage industries through the integration of optical control of ferromagnetic bits.

Reducing the critical current for spin-transfer switching of perpendicularly magnetized nanomagnets

We describe nanopillar spin valves with perpendicular anisotropy designed to reduce the critical current needed for spin transfer magnetization reversal while maintaining thermal stability. By adjusting the perpendicular anisotropy and volume of the free element consisting of a [Co/Ni] multilayer, we observe that the critical current scales with the height of the anisotropy energy barrier and we achieve critical currents as low as 120 μA in quasistatic room-temperature measurements of a 45 nm diameter device. The field-current phase diagram of such a device is presented.

Spin-transfer pulse switching: From the dynamic to the thermally activated regime

The effect of thermal fluctuations on spin-transfer switching has been studied for a broad range of time scales (subnanoseconds to seconds) in a model system, a uniaxial thin film nanomagnet. The nanomagnet is incorporated into a spin-valve nanopillar, which is subject to spin-polarized current pulses of variable amplitude and duration. Two physical regimes are clearly distinguished: a long pulse duration regime, in which reversal occurs by spin-transfer assisted thermal activation over an energy barrier, and a short-time large pulse amplitude regime, in which the switching probability is determined by the spin-angular momentum in the current pulse.

Giant spin-dependent thermoelectric effect in magnetic tunnel junctions

Thermoelectric effects in magnetic nanostructures and the so-called spin caloritronics are attracting much interest. Indeed it provides a new way to control and manipulate spin currents, which are key elements of spin-based electronics. Here we report on a giant magnetothermoelectric effect in a magnetic tunnel junction. The thermovoltage in this geometry can reach 1 mV. Moreover a magnetothermovoltage effect could be measured with ratio similar to the tunnel magnetoresistance ratio. The Seebeck coefficient can then be tuned by changing the relative magnetization orientation of the two magnetic layers in the tunnel junction. Therefore, our experiments extend the range of spintronic devices application to thermoelectricity and provide a crucial piece of information for understanding the physics of thermal spin transport.

Light-induced magnetization reversal of high-anisotropy TbCo alloy films

Magnetization reversal using circularly polarized light provides a way to control magnetization without any external magnetic field and has the potential to revolutionize magnetic data storage. However, in order to reach ultra-high density data storage, high anisotropy media providing thermal stability are needed. Here, we evidence all-optical magnetization switching for different TbxCo1−x ferrimagnetic alloy compositions using fs- and ps-laser pulses and demonstrate all-optical switching for films with anisotropy fields reaching 6 T corresponding to anisotropy constants of 3 × 106 ergs/cm3. Optical magnetization switching is observed only for alloy compositions where the compensation temperature can be reached through sample heating.

Ultrafast spin-transfer switching in spin valve nanopillars with perpendicular anisotropy

Spin-transfer switching with short current pulses has been studied in spin-valve nanopillars with perpendicularly magnetized free and reference layers. Magnetization switching with current pulses as short as 300 ps is demonstrated. The pulse amplitude needed to reverse the magnetization is shown to be inversely proportional to the pulse duration, consistent with a macrospin spin-transfer model. However, the pulse amplitude duration switching boundary depends on the applied field much more strongly than predicted by the zero temperature macrospin model. The results also demonstrate that there is an optimal pulse length that minimizes the energy required to reverse the magnetization.

Quantifying perpendicular magnetic anisotropy at the Fe-MgO(001) interface

We show that Fe-MgO interfaces possess strong perpendicular magnetic anisotropy of 1.0 ± 0.1 erg/cm2 in fully epitaxial MgO/V/Fe/MgO(001) and MgO/Cr/Fe/MgO(001) heterostructures. The sign and amplitude of the total anisotropy are quantified as a function of Fe thickness using magnetometry and ferromagnetic resonance. There is a transition from out-of-plane to in-plane anisotropy for 6 Fe monolayers in V/Fe/MgO and only 4 monolayers in Cr/Fe/MgO. A detailed study of the Fe magnetization and effective anisotropy in both systems explains this difference and quantifies the Fe-MgO interface anisotropy.

Magnetic anisotropy modified by electric field in V/Fe/MgO(001)/Fe epitaxial magnetic tunnel junction

Single-crystalline V/Fe(0.7 nm)/MgO(1.2nm)/Fe(20 nm) magnetic tunnel junctions are studied to quantify the influence of an electric field on the Fe/MgO interface magnetic anisotropy. The thinnest Fe soft layer has a perpendicular magnetic anisotropy (PMA), whereas the thickest Fe layer acts as sensor for magnetic anisotropy changes. When electrons are added at the PMA Fe/MgO interface (negative voltage), no anisotropy changes are observed. For positive voltage, the anisotropy constant decreases with increasing bias voltage. A huge 1150 fJ V−1 m−1 anisotropy variation with field is observed and the magnetization is found to turn from out-of-plane to in-plane of the sample with the applied voltage.

Strong perpendicular magnetic anisotropy in Ni/Co(111) single crystal superlattices

Single crystal Ni/Co(111) superlattices have been grown by molecular beam epitaxy. The Ni thickness is 3 ML whereas the Co thickness varies from 0.2 to 4 ML. The superlattices were studied using magnetometry and ferromagnetic resonance spectroscopy and they all exhibit strong perpendicular to the plane magnetic anisotropy. The maximum magnetocrystalline anisotropy is obtained for one cobalt monolayer. Kerr microscopy measurements show the variation of domain pattern as the Co layer thickness changes.