M. Nishimoto

Power-amplifier modules covering 70-113 GHz using MMICs

A set of W-band power amplifier (PA) modules using monolithic microwave integrated circuits (MMICs) have been developed for the local oscillators of the far-infrared and sub-millimeter telescope (FIRST). The MMIC PA chips include three driver and three PAs, designed using microstrip lines, and another two smaller driver amplifiers using coplanar waveguides, covering the entire W-band. The highest frequency PA, which covers 100-113 GHz, has a peak power of greater than 250 mW (25 dBm) at 105 GHz, which is the best output power performance for a monolithic amplifier above 100 GHz to date. These monolithic PA chips are fabricated using 0.1-/spl mu/m AlGaAs/InGaAs/GaAs pseudomorphic T-gate power high electron-mobility transistors on a 2-mil GaAs substrate. The module assembly and testing, together with the system applications, is also addressed in this paper.

A 183 GHz low noise amplifier module with 5.5 dB noise figure for the conical-scanning microwave imager sounder (CMIS) program

We present the development of a low noise amplifier (LNA) module which demonstrates gain >24 dB and noise figure (NF)<5.5 dB at 183 GHz. Our previous results reported NF<8.3 dB [1], This improvement was achieved by inserting a single-ended microwave monolithic integrated circuit (MMIC) LNA utilizing TRWs 0.08 /spl mu/m gate InP MMIC technology. This paper discusses the development of the new MMIC LNA, reviews the previous results and presents the new data that was obtained,.

MMIC power amplifiers as local oscillator drivers for FIRST

The Heterodyne Instrument for the Far-Infrared and Sub- millimeter Telescope requires local oscillators well into the terahertz frequency range. The mechanism to realize the local oscillators will involve synthesizers, active multiplier chains (AMCs) with output frequencies from 71 - 112.5 GHz, power amplifiers to amplify the AMC signals, and chains of Schottky diode multipliers to achieve terahertz frequencies. We will present the latest state-of-the-art results on 70 - 115 GHz Monolithic Millimeter-wave Integrated Circuit power amplifier technology.

High performance D-band (118 GHz) monolithic low noise amplifier

This paper presents the results of 118 GHz amplifier designs with state of art low noise performance using 0.1-/spl mu/m pseudomorphic InGaAs/InAlAs/InP HEMT technology. A single ended fixtured 118 GHz LNA demonstrated 3.8-4.5 dB NF with an associated gain of greater than 14.5 dB from 112.5 to 119.5 GHz. A on-wafer balanced LNA with gain of 12 dB, return loss of 9 dB from 110 to 130 GHz was also demonstrated.

A 183 GHz low noise amplifier module for the conical-scanning microwave imager sounder (CMIS) program

The design and fabrication of a 183 GHz MMIC LNA module is presented. The module has gain >20 dB and noise figure <8.3 dB waveguide flange to waveguide flange. This demonstrates that MMIC technology has advanced to the point that they can be considered as legitimate front ends for heterodyne receivers. This paper discusses the development of the module.

A 150-215 GHz InP HEMT low noise amplifier with 12 dB gain

We present a 150-215 GHz InP HEMT MMIC with greater than 12dB gain across this band. The MMIC is a 3-stage, single-ended microstrip design implemented using 0.07 mum T-gate InP HEMT MMIC technology with 50 mum substrate

High performance and high reliability InP HEMT low noise amplifiers for phased-array applications

This paper describes the development of a Q-band low noise amplifier unit using a 0.1 /spl mu/m InP HEMT MMICs that has been demonstrated with high RF performance and high reliability over a frequency band from 43.5 to 45.5 GHz at Northrop Grumman Space Technology (NGST). The InP HEMT LNAs with high RF performance and high reliability are crucial for the advanced phased-array applications. The module demonstrates superior performance with gain greater than 30.1 dB and noise figure less than 3.2 dB over the frequency band of 43.5 to 45.5 GHz. The InP HEMT technology has an activation energy of 1.9 eV and mean-time-to-failure of 10/sup 8/ hours at T/sub junction/ of 125/spl deg/C and these MMICs further demonstrate the readiness of NGSTs 0.1 /spl mu/m InP HEMT MMICs technology for the advanced phased-array applications.

High Reliability of 0.1 µm InGaAs/InAlAs/InP High Electron Mobility Transistors Microwave Monolithic Integrated Circuit on 3-inch InP Substrates

The high-reliability performance of K-band microwave monolithic integrated circuit (MMIC) amplifiers fabricated with 0.1 µm gate length InGaAs/InAlAs/InP high electron mobility transistors (HEMTs) on 3-inch wafers using a high volume production process technology is reported. Operating at an accelerated life test condition of Vds=1.5 V and Ids=150 mA/mm, two-stage balanced amplifiers were lifetested at two-temperatures (T1=230°C, and T2=250°C) in nitrogen ambient. The activation energy (Ea) is as high as 1.5 eV, achieving a projected median-time-to-failure (MTTF) >1×106 h at a 125°C of junction temperature. MTTF was determined by 2-temperature constant current stress using |ΔS21|>1.0 dB as the failure criteria. This is the first report of high reliability 0.1 µm InGaAs/InAlAs/InP HEMT MMICs based on small-signal microwave characteristics. This result demonstrates a reliable InGaAs/InAlAs/InP HEMT production technology.

Monolithic power amplifiers covering 70-113 GHz

A number of monolithic W-band power amplifiers (PAs) have been developed for local oscillators of the Far Infrared and Submillimeter Telescope (FIRST). These PA chips include three driver and three power amplifiers covering most of the W-band, i.e., the frequency ranges of 72-81, 90-101, and 100-113 GHz. Each driver amplifier and power amplifier provides at least 20 and 22 dBm (160 mW), respectively in the frequency range it covers. The 100-113 GHz power amplifier has a peak power of greater than 250 mW (25 dBm) at 105 GHz, which is the best output power performance for a monolithic amplifier above 100 GHz to date. These monolithic chips are fabricated using 0.1-/spl mu/m AlGaAs-InGaAs-GaAs pseudomorphic T-gate power HEMTs on a 2-mil GaAs substrate.

Wafer Level Integrated Antenna Front End Module For Low Cost Phased Array Implementation

This paper describes the implementation of a fully integrated antenna front-end that leverages Northrop Grumman Space Technologys (NGSTs) novel wafer level packaging technique to marry the optimal technology per function through the bonding of III-V wafers. To demonstrate the proposed approach, a 4-element Q-band linear array has been assembled and tested to validate the concept.