M. Tsaousidou

Rabi oscillations in a strongly driven semiconductor quantum well

We study the interaction of an ac electric field with a semiconductor quantum well by using the effective nonlinear Bloch equations. Only the first two electron subbands in the well are considered. We apply the rotating wave approximation and derive analytical solutions for the Bloch equations for two different values of the detuning. At exact resonance we find a critical value of the Rabi frequency around which the dynamics of the system changes abruptly. Above this critical value one obtains electron oscillations with complete inversion in the two-subband system, while below this value we obtain electron oscillations without complete inversion and with the majority of the electron population on average in the lower subband. We also present numerical calculations for a specific quantum well structure and assess the limits of validity of the analytical results.

Theory of phonon-drag thermopower of extrinsic semiconducting single-wall carbon nanotubes and comparison with previous experimental data

A theoretical model for the calculation of the phonon-drag thermopower,

Thermal conductance of a weakly coupled quantum dot

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Acoustic-phonon-limited mobility and giant phonon-drag thermopower in MgZnO/ZnO heterostructures

, in degenerately doped semiconducting single-wall carbon nanotubes (SWCNTs) is proposed. Detailed calculations of

Ultra-low acoustic-phonon-limited mobility and giant phonon-drag thermopower in MgZnO/ZnO heterostructures

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Quantum control of the dynamics of a semiconductor quantum well

are performed as a function of temperature, tube radius, and position of the Fermi level. We derive a simple analytical expression for

Individual band mobilities in a double quantum well

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The thermopower of a high-mobility Si-MOSFET around the metal-insulator transition

that can be utilized to determine the free carrier density in doped nanotubes. At low temperatures

Coherent manipulation of a strongly driven semiconductor quantum well

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Fundamental relationship between the Herring and Cantrell-Butcher formulas for the phonon-drag thermopower of two-dimensional electron and hole gases

shows an activated behavior characteristic of the one-dimensional character of carriers. Screening effects are taken into account and it is found that they dramatically reduce the magnitude of