Ma Chengyan
Chinese Academy of Sciences
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Publication
Featured researches published by Ma Chengyan.
Journal of Semiconductors | 2009
Xiao Shimao; Ma Chengyan; Ye Tianchun
This paper presents a new CMOS LC-VCO with a 2.95–3.65 GHz tuning range. The large tuning range is achieved by tuning curve compensation using a novel varactor configuration, which is mainly composed of four accumulation-mode MOS varactors (A-MOS) and two bias voltages. The proposed varactor has the advantages of optimizing quality factor and tuning range simultaneously, linearizing the effective capacitance and thus greatly reducing the amplitude-to-phase modulation (AM-PM) conversion. The circuit is validated by simulations and fabricated in a standard 0.18 μm 1P6M CMOS process. Measured phase noise is lower than –91 dBc at 100 kHz offset from a 3.15 GHz carrier while measured tuning range is 21.5% as the control voltage varies from 0 to 1.8 V. The VCO including buffers consumes 2.8 mA current from a 1.8 V supply.
Journal of Semiconductors | 2012
Yin Xizhen; Xiao Shimao; Jin Yuhua; Wu Qiwu; Ma Chengyan; Ye Tianchun
A constant loop bandwidth fractional-N frequency synthesizer for portable civilian global navigation satellite system (GNSS) receivers implemented in a 130 nm 1P6M CMOS process is introduced. Via discrete work- ing regions, the LC-VCO obtains a wide tuning range with a simple structure and small VCO gain. Spur suppression technology is proposed to minimize the phase offset introduced by PFD and charge pumps. The optimized band- width is maintained by an auto loop calibration module to adjust the charge pump current when the PLL output frequency changes or the temperature varies. Measurement results show that this synthesizer attains an in-band phase noise lower than -93 dBc at a 10 kHz offset and a spur less than -70 dBc; the bandwidth varies by 3% for all the GNSS signals. The whole synthesizer consumes 4.5 mA current from a 1 V supply, and its area (without the LO tested buffer) is 0.5 mm 2 .
Journal of Semiconductors | 2010
Pan Wenguang; Ma Chengyan; Gan Yebing; Ye Tianchun
The design of a digitally-tunable sixth-order reconfigurable OTA-C filter in a 0.18-μm RFCMOS process is proposed. The filter can be configured as a complex band pass filter or two real low pass filters. An improved digital automatic frequency tuning scheme based on the voltage controlled oscillator technique is adopted to compensate for process variations. An extended tuning range (above 8:1) is obtained by using widely continuously tunable transcon-ductors based on digital techniques. In the complex band pass mode, the bandwidth can be tuned from 3 to 24 MHz and the center frequency from 3 to 16 MHz.
Journal of Semiconductors | 2010
Xiao Shimao; Yu Yunfeng; Ma Chengyan; Ye Tianchun; Yin Ming
The design consideration and implementation of a CMOS frequency synthesizer for the portable hybrid global navigation satellite system are presented. The large tuning range is achieved by tuning curve compensation using an improved VCO resonant tank, which reduces the power consumption and obtains better phase noise performance. The circuit is validated by simulations and fabricated in a standard 0.18 μm 1P6M CMOS process. Close-loop phase noise measured is lower than −95 dBc at 200 kHz offset while the measured tuning range is 21.5% from 1.47 to 1.83 GHz. The proposed synthesizer including source coupled logic prescaler consumes 6.2 mA current from 1.8 V supply. The whole silicon required is only 0.53 mm2.
Journal of Semiconductors | 2009
Gan Yebing; Ma Chengyan; Yuan Guo-shun
A fifth/seventh order dual-mode OTA-C complex filter for global navigation satellite system receivers is implemented in a 0.18 μm CMOS process. This filter can be configured as the narrow mode of a 4.4 MHz bandwidth center at 4.1 MHz or the wide mode of a 22 MHz bandwidth center at 15.42 MHz. A fully differential OTA with source degeneration is used to provide sufficient linearity. Furthermore, a ring CCO based frequency tuning scheme is proposed to reduce frequency variation. The measured results show that in narrow-band mode the image rejection ratio (IMRR) is 35 dB, the filter dissipates 0.8 mA from the 1.8 V power supply, and the out-of-band rejection is 50 dB at 6 MHz offset. In wide-band mode, IMRR is 28 dB and the filter dissipates 3.2 mA. The frequency tuning error is less than ±2%.
Journal of Semiconductors | 2014
Luo Yanbin; Shi Jian; Ma Chengyan; Gan Yebing; Qian Min
A high linearity 1.575 GHz SiGe:HBT low noise amplifier (LNA) for global positioning system applications is described. The bipolar cascoded with an MOSFET LNA was fabricated in a commercial 0.18 μm SiGe BiCMOS process. A resistor bias feed circuit with a feedback resistor was designed for the LNA input transistor to improve its intermodulation and compression performance. The packaged chip tested on board has displayed a noise figure of 1.11 dB, a power gain of 18 dB, an output 1 dB compression point of +7.8 dBm and an input third-order intercept point of +1.8 dBm. The chip occupies a 500 × 560 μm2 area and consumes 3.6 mA from a 2.85 V power supply.
Journal of Semiconductors | 2013
Zhou Renjie; Xiang Yong; Wang Hong; Gan Yebing; Qian Min; Ma Chengyan; Ye Tianchun
A monolithic integrated low noise amplifier (LNA) based on a SiGe HBT process for a global navigation satellite system (GNSS) is presented. An optimizing strategy of taking parasitic capacities at the input node into consideration is adopted and a method and design equations of monolithically designing the LC load and the output impedance matching circuit are introduced. The LNA simultaneously reaches excellent noise and input/output impedance matching. The measurement results show that the LNA gives an ultra-low noise figure of 0.97 dB, a power gain of 18.6 dB and a three-order input intermodulation point of −6 dBm at the frequency of 1.575 GHz. The chip consumes 5.4 mW from a 1.8 V source and occupies 600 × 650 μm2 die area.
Journal of Semiconductors | 2012
He Xiaofeng; Ma Chengyan; Ye Tianchun
An output amplitude configurable wideband automatic gain control (AGC) with high gain step accuracy for the GNSS receiver is presented. The amplitude of an AGC is configurable in order to cooperate with baseband chips to achieve interference suppression and be compatible with different full range ADCs. And whats more, the gain-boosting technology is introduced and the circuit is improved to increase the step accuracy. A zero, which is composed by the source feedback resistance and the source capacity, is introduced to compensate for the pole. The AGC is fabricated in a 0.18 μm CMOS process. The AGC shows a 62 dB gain control range by 1 dB each step with a gain error of less than 0.2 dB. The AGC provides 3 dB bandwidth larger than 80 MHz and the overall power consumption is less than 1.8 mA, and the die area is 800 × 300 μm2.
Journal of Semiconductors | 2012
Yin Xizhen; Ma Chengyan; Ye Tianchun; Xiao Shimao; Jin Yuhua
An LC-VCO with an enhanced quality factor (Q/ varactor for use in a high-sensitivity GNSS receiver is presented. An enhanced A-MOS varactor is composed of two accumulation-mode MOS (A-MOS) varactors and two bias voltages, which show the improved Q and linearization capacitance-voltage (C -V / curve. The VCO gain (KVCO/ is compensated by a digital switched varactors array (DSVA) over entire sub-bands. Based on the characteristics of an A-MOS, the varactor in a DSVA is a high Q fixed capacitor as it is switched off, and a moderate Q tuning varactor when it is switched on, which keeps the maximal Q for the LC-tank. The proposed circuit is fabricated in a 0.18 m 1P6M CMOS process. The measured phase noise is better than -122 dBc/Hz at a 1 MHz offset while the measured tuning range is 58.2% and the variation of KVCO is close to 21% over the whole of the sub-bands and the effective range of the control voltage. The proposed VCO dissipates less than 5.4 mW over the whole operating range from a 1.8 V supply.
Journal of Semiconductors | 2010
Yu Yunfeng; Yue Jianlian; Xiao Shimao; Zhuang Haixiao; Ma Chengyan; Ye Tianchun
A low-power frequency synthesizer for GPS/Galileo L1/E1 band receivers implemented in a 0.18 m CMOS process is introduced. By adding clock-controlled transistors at latch outputs to reduce the time constant at sensing time, the working frequency of the high-speed source-coupled logic prescaler supplying quadrature local oscil- lator signals has been increased, compared with traditional prescalers. Measurement results show that this synthesizer achieves an in-band phase noise of -87 dBc/Hz at 15 kHz offset, with spurs less than -65 dBc. The whole synthesizer consumes 6 mA in the case of a 1.8 V supply, and its core area is 0.6 mm 2 .