Maki Toshihiro | Researchain

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Featured researches published by Maki Toshihiro.

Archive | 1991

HIGH PURITY METALLIC MATERIAL, MANUFACTURE THEREOF, SPUTTERING TARGET USING SAME, AND WIRING NETWORK AND SEMICONDUCTIVE PACKAGE FORMED BY USING SAME

Ishigami Takashi; Kawai Mitsuo; Obata Minoru; Sato Michio; Yamanobe Takashi; Maki Toshihiro; Ando Shigeru; Yagi Noriaki

Archive | 2004

WIRING FILM, SPATTER TARGET FOR FORMING WIRING FILM, AND ELECTRONIC DEVICE USING THE FILM

Ishigami Takashi; Watanabe Koichi; Nitta Akihisa; Maki Toshihiro; Yagi Noriaki

Archive | 2001

METHOD FOR PRODUCING A HIGH MELTING POINT METALLIC SILICIDE TARGET

Sato Michio; Yamanobe Takashi; Komatsu Tohru; Fukasawa Yoshiharu; Yagi Noriaki; Maki Toshihiro; Shizu Hiromi

Archive | 2006

Sputter target manufacturing method

Ishigami Takashi; Watanabe Koichi; Nitta Akihisa; Maki Toshihiro; Yagi Noriaki

Archive | 2000

Mo-W MATERIAL FOR WIRING FORMATION, Mo-W TARGET FOR WIRING FORMATION AND ITS PRODUCTION, AND Mo-W WIRING THIN FILM AND LIQUID CRYSTAL DISPLAY DEVICE

Kosaka Yasuo; Fukazawa Miharu; Tsuji Yoshiko; Ikeda Mitsushi; Sato Michio; Maki Toshihiro

Archive | 2005

PROCESS FOR FABRICATING SEMICONDUCTOR ELEMENT, AND W MATERIAL FOR MAGNETRON SPUTTERING SYSTEM

Ishigami Takashi; Sato Michio; Obata Minoru; Miyauchi Masami; Kawai Mitsuo; Yamanobe Takashi; Maki Toshihiro; Yagi Noriaki; Ando Shigeru; Kobanawa Yoshiko

Archive | 1996

HIGH-PURITY METALLIC MATERIAL

Ishigami Takashi; Kawai Mitsuo; Obata Minoru; Sato Michio; Yamanobe Takashi; Maki Toshihiro; Ando Shigeru; Yagi Noriaki

Archive | 2001

Mehtod of manufacturing a refractory metal silicide target

Sato Michio; Yamanobe Takashi; Komatsu Tohru; Fukasawa Yoshiharu; Yagi Noriaki; Maki Toshihiro; Shizu Hiromi

Archive | 1999

INTERCONNECTION FILM FOR FORMING SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR PACKAGE

Ishigami Takashi; Kawai Mitsuo; Obata Minoru; Sato Michio; Yamanobe Takashi; Maki Toshihiro; Ando Shigeru; Yagi Noriaki

Archive | 1999

HIGH-PURITY CONDUCTIVE FILM FOR SEMICONDUCTOR DEVICE AND FORMATION THEREOF, AND SEMICONDUCTOR DEVICE USING THE SAME

Ishigami Takashi; Sato Michio; Obata Minoru; Miyauchi Masami; Kawai Mitsuo; Yamanobe Takashi; Maki Toshihiro; Yagi Noriaki; Ando Shigeru; Kobanawa Yoshiko

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