Makoto Hideshima
Toshiba
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Publication
Featured researches published by Makoto Hideshima.
power electronics specialists conference | 1990
Tetsujiro Tsunoda; Makoto Hideshima; Masashi Kuwahara; T. Kuramoto; A. Nakagawa
A novel 600 and 1200 V IGBT (insulated-gate bipolar transistor) family has been developed for operation at more than 20 kHz with sufficient ruggedness. It was found that turn-off loss can be reduced by optimizing the n/sup -/ layer thickness as well as the n/sup +/ buffer impurity profile. A thick n/sup -/ layer was found to be an important factor in improving device ruggedness. Turn-off loss was successfully reduced to one-third of that in conventional IGBTs, while a large safe operating area was retained.<<ETX>>
Archive | 1991
Makoto Hideshima; Tetsujiro Tsunoda; Shinjiro Kojima; Masaru Ando
Archive | 1993
Chihiro Okado; Makoto Hideshima
Archive | 1990
Makoto Hideshima; Tetsujiro Tsunoda; Masashi Kuwahara; Shingo Yanagida
Archive | 1991
Makoto Hideshima
Archive | 1986
Makoto Hideshima; Wataru Takahashi; Masahi Kuwahara
Archive | 1985
Makoto Hideshima; Masashi Kuwabara; Kenichi Muramoto; Wataru Takahashi
Archive | 1984
Makoto Hideshima; Wataru Takahashi; Kenichi Muramoto
Archive | 1980
Keizo Tani; Makoto Hideshima
Archive | 1990
Shuzo Saeki; Makoto Hideshima
