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Publication
Featured researches published by Makoto Sugiura.
Proceedings of SPIE | 2007
Wenjie Li; Kuang-Jung Chen; Ranee Kwong; Margaret C. Lawson; Mahmoud Khojasteh; Irene Popova; P. Rao Varanasi; Tsutomu Shimokawa; Yoshikazu Yamaguchi; Shiro Kusumoto; Makoto Sugiura; Takanori Kawakami; Mark Slezak; Gary Dabbagh; Zhi Liu
The combination of immersion lithography and reticle enhancement techniques (RETs) has extended 193nm lithography into the 45nm node and possibly beyond. In order to fulfill the tight pitch and small critical dimension requirements of these future technology nodes, the performance of 193nm resist materials needs to further improve. In this paper, a high performance 193nm photoresist system based on fluorosulfonamide (FSM) is designed and developed. The FSM group has good transparency at 193nm. Compared to the commonly used hexafluoroalcohol (HFA) group, the trifluoromethyl sulfonamide (TFSM) functionality has a lower pKa value and contains less fluorine atoms. Polymers containing the TFSM functionality have exhibited improved dissolution properties and better etch resistance than their HFA counterparts. Resists based on the FSM-containing polymers have shown superior lithographic performance for line, trench and contact hole levels under the 45nm node exposure conditions. In addition, FSM resists have also demonstrated excellent bright field and dark field compatibility and thereby make it possible to use one resist for both bright field and dark field level applications. The structure, property and lithographic performance of the FSM resist system are reported.
Advances in resist technology and processing. Conference | 2005
Isao Nishimura; Hiroyuki Ishii; Norihiko Sugie; Nakaatsu Yoshimura; Masato Tanaka; Hiromi Egawa; Keiji Konno; Makoto Sugiura; Hikaru Sugita; Junichi Takahashi; Tsutomu Shimokawa
A comparison study of single-, bi-, and tri-layer resist (SLR, BLR, and TLR, respectively) process was investigated. The goal of this study is to clarify the advantage of each process for the pattern transfer etching process. Conventional ArF photoresist and bottom anti-reflective coating process were applied to SLR. Novel silsesquioxane (SSQ) resist and spin-on organic hard mask (SOHM) were used for BLR process. The SSQ consists of siloxane backbone which contains three components, protective group, solubility control group, and higher silicon containing group to increase etch selectivity to SOHM. The main polymer in SOHM contains naphthalene type unit, for both anti-reflective and etch-durable properties. SOHM layer is highly cross-linked film with more than 85wt% carbon content which contributes to higher etch selectivity. A conventional ArF photoresist as an imaging layer, spin-on glass (SOG) as an intermediate layer, and the SOHM as a bottom layer were applied to TLR process. Multi-layer materials of each process were spin-coated on the stacks of cap-oxide/low-k/SiC on Si substrate and exposed with ArF 0.75NA scanner for 100nm line and space imaging. SLR showed better lithographic performance than BLR and TLR. However after pattern transfer etching process into SiOC layer, the different performance among each process has been observed. SLR process after pattern transfer etching showed severe surface roughness, striation and line width roughness (LWR). On the other hand, BLR and TLR showed significant improvement of pattern transfer performance. Multi-layer process can improve LWR during etching process.
Archive | 2006
Tomoki Nagai; Eiji Yoneda; Takuma Ebata; Takanori Kawakami; Makoto Sugiura; Tsutomu Shimokawa; Makoto Shimizu
Proceedings of SPIE | 2008
Masafumi Hori; Tomoki Nagai; Atsushi Nakamura; Takayoshi Abe; Gouji Wakamatsu; Tomohiro Kakizawa; Yuusuke Anno; Makoto Sugiura; Shiro Kusumoto; Yoshikazu Yamaguchi; Tsutomu Shimokawa
Archive | 2008
Yukio Nishimura; Kaori Sakai; Nobuji Matsumura; Makoto Sugiura; Atsushi Nakamura; Gouji Wakamatsu; Yuusuke Anno
Archive | 2011
Yuusuke Anno; Kouichi Fujiwara; Makoto Sugiura; Gouji Wakamatsu
Archive | 2008
Daita Kouno; Norihiko Sugie; Gouji Wakamatsu; Norihiro Natsume; Yukio Nishimura; Makoto Sugiura
Archive | 2006
Tomoki Nagai; Eiji Yoneda; Takuma Ebata; Takanori Kawakami; Makoto Sugiura; Tsutomu Shimokawa; Makoto Shimizu
Archive | 2006
Mineki Kawakami; Shiro Kusumoto; Tsutomu Shimokawa; Makoto Sugiura; 努 下川; 峰規 川上; 誠 杉浦; 士朗 楠本
Archive | 2011
Gouji Wakamatsu; Masafumi Hori; Kouichi Fujiwara; Makoto Sugiura