Marappan Velusamy

Efficient, Large Area ITO‐and‐PEDOT‐free Organic Solar Cell Sub‐modules

A transparent top anode consisting of molybdenum oxide (MoO ) and silver (Ag) is employed in an inverted-illumination geometry in conjunction with a thick aluminium (100 nm) bottom contact. The optimised MoO -Ag-MoO stack (MAMS) has an optical transmission of 80% at the wavelength of 520 nm, sheet resistance of 5 ohm sq and yields conversion efficiencies in 5 cm × 5 cm photoactive-area sub-modules of 3.17% - outperforming the equivalent conventional ITO/PEDOT:PSS devices.

Nanostructured, Active Organic-Metal Junctions for Highly Efficient Charge Generation and Extraction in Polymer-Fullerene Solar Cells

A facile one step method for periodic nanostructuring of organic solar cells is presented. The nanostructured metal-organic interface delivers combined enhanced light trapping and improved charge extraction leading to up to a 10% increase in power conversion efficiency of already optimized planar devices.

Time-resolved neutron reflectometry and photovoltaic device studies on sequentially deposited PCDTBT-fullerene layers

We have used steady-state and time-resolved neutron reflectometry to study the diffusion of fullerene derivatives into the narrow optical gap polymer poly[N-9″-hepta-decanyl-2,7-carbazole-alt-5,5-(4,7-di-2-thienyl-2,1,3-benzothiadiazole)] (PCDTBT) to explore the sequential processing of the donor and acceptor for the preparation of efficient organic solar cells. It was found that when [6,6]-phenyl-C61-butyric-acid-methyl-ester (60-PCBM) was deposited onto a thin film of PCDTBT from dichloromethane (DCM), a three-layer structure was formed that was stable below the glass-transition temperature of the polymer. When good solvents for the polymer were used in conjunction with DCM, both 60-PCBM and [6,6]-phenyl-C71-butyric-acid-methyl-ester (70-PCBM) were seen to form films that had a thick fullerene layer containing little polymer and a PCDTBT-rich layer near the interface with the substrate. Devices composed of films prepared by sequential deposition of the polymer and fullerene had efficiencies of up to 5.3%, with those based on 60-PCBM close to optimized bulk heterojunction (BHJ) cells processed in the conventional manner. Sequential deposition of pure components to form the active layer is attractive for large-area device fabrication, and the results demonstrate that this processing method can give efficient solar cells.

Determination of Fullerene Scattering Length Density: A Critical Parameter for Understanding the Fullerene Distribution in Bulk Heterojunction Organic Photovoltaic Devices

Fullerene derivatives are commonly used as electron acceptors in combination with (macro)molecular electron donors in bulk heterojunction (BHJ) organic photovoltaic (OPV) devices. Understanding the BHJ structure at different electron donor/acceptor ratios is critical to the continued improvement and development of OPVs. The high neutron scattering length densities (SLDs) of the fullerenes provide effective contrast for probing the distribution of the fullerene within the blend in a nondestructive way. However, recent neutron scattering studies on BHJ films have reported a wide range of SLDs ((3.6-4.4) × 10(-6) Å(-2)) for the fullerenes 60-PCBM and 70-PCBM, leading to differing interpretations of their distribution in thin films. In this article, we describe an approach for determining more precisely the scattering length densities of the fullerenes within a polymer matrix in order to accurately quantify their distribution within the active layers of OPV devices by neutron scattering techniques.

Solution structure: defining polymer film morphology and optoelectronic device performance

Film structure plays a critical role in defining the performance of all organic optoelectronic devices, with the importance clearly illustrated in the development of organic acceptor–donor bulk heterojunction (BHJ) photovoltaic (OPV) devices where solvent and/or thermal annealing of the deposited active layer affect solar cell output. Herein we report that the polymer–polymer interactions in solution, which are dependent on the thermal history of the solution, are a first order parameter in controlling the properties of the final active layer and hence device performance. We illustrate the key role played by organic semiconductor interactions in solution with the high efficiency donor–acceptor co-polymer, poly[N-9′′-heptadecanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole)] (PCDTBT), and its blends with [6,6]-phenyl C71-butyric acid methyl ester (PC71BM). Differences in the cooling rate of the casting solution after dissolution can lead to a 20% variation in the ultimate efficiency of cells with identical active layer thicknesses with slow-cooled solutions giving rise to poorer devices. The oft-ignored intermolecular (polymer–polymer) interactions that occur in solution are manifest by dramatic differences in viscosity and are a function of concentration and molecular weight. Hence solution thermal history represents a critical new dimension in the processing landscape for organic polymer semiconductors.

Structured-gate organic field-effect transistors

We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO2) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source–drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source–drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends.

Large area monolithic organic solar cells

Although efficiencies of > 10% have recently been achieved in laboratory-scale organic solar cells, these competitive performance figures are yet to be translated to large active areas and geometries relevant for viable manufacturing. One of the factors hindering scale-up is a lack of knowledge of device physics at the sub-module level, particularly cell architecture, electrode geometry and current collection pathways. A more in depth understanding of how photocurrent and photovoltage extraction can be optimised over large active areas is urgently needed. Another key factor suppressing conversion efficiencies in large area cells is the relatively high sheet resistance of the transparent conducting anode - typically indium tin oxide. Hence, to replace ITO with alternative transparent conducting anodes is also a high priority on the pathway to viable module-level organic solar cells. In our paper we will focus on large area devices relevant to sub-module scales – 5 cm × 5 cm monolithic geometry. We have applied a range of experimental techniques to create a more comprehensive understanding of the true device physics that could help make large area, monolithic organic solar cells more viable. By employing this knowledge, a novel transparent anode consisting of molybdenum oxide (MoOx) and silver (Ag) is developed to replace ITO and PEDOT-free large area solar cell sub-modules, acting as both a transparent window and hole-collecting electrode. The proposed architecture and anode materials are well suited to high throughput, low cost all-solution processing.