Marco Honsberg

A novel Intelligent Power Module (IPM) in a compact transfer Mold package with New High Voltage Integrated Circuit (HVIC) and integrated bootstrap diodes

Transfer Mold IPM employs a novel insulated thermal sheet technology and Full-Gate CSTBT™ ranging from 5A to 15A with blocking voltage of 600V. The complete protection functions and the novel HVIC and bootstrap diode being integrated into the package structure create a state-of-the-art IPM which can be evaluated easily by the described evaluation platform.

Turn-on loss vs. free-wheel diode recovery dv/dt in IGBT modules

The latest 6th generation Carrier Stored Trench Gate Bipolar Transistor (CSTBT™) provides state of the art optimization of conduction and switching losses in IGBT modules. Use of low values of resistance in series with the IGBT gate produces low turn-on losses but increases stress on the recovery of the free-wheel diode resulting in higher dv/dt and increased EMI. The latest modules also incorporate new, improved recovery free-wheel diode chips which improve this situation but detailed evaluation of the trade-off between turn-on loss and dv/dt performance is required. This paper describes the evaluation, test results, and a comparative analysis of dv/dt versus turn-on loss as a function of gate drive conditions for the 6th generation IGBT compared to the standard 5th generation module.

A new 3 level 4in1 T-type IGBT module with low internal inductance and optimized 6.1 st /7 th generation 1200V/650V chipset for UPS and PV inverter application

Energy efficiency requirements of PV-inverter and UPS can be reached through multi-level IGBT topologies. A 3-level T-type topology utilizing dedicated 650V and 1200V IGBT and free-wheeling Diode chips (FwDi) and low inductance module construction are essential to create a performing IGBT module for these applications.

New, improved self-protected Intelligent Power Modules with increased efficiency for 10–100kW applications

A new, more efficient series of self-protected power modules (Intelligent Power Modules (IPMs)) for application in 10 to 100kW motor drives and power supplies has been developed. Several new technologies including improved chip technology and structural improvements have been implemented to reduce effective junction temperature and increase power and thermal cycling capability resulting in more efficient and more reliable power modules. Compatibility with conventional dual module terminal location and spacing and package dimensions has been maintained.