Mark Saly

Atomic layer deposition of molybdenum oxide using bis(tert-butylimido)bis(dimethylamido) molybdenum

Molybdenum trioxide films have been deposited using thermal atomic layer deposition techniques with bis(tert-butylimido)bis(dimethylamido)molybdenum. Films were deposited at temperatures from 100 to 300 °C using ozone as the oxidant for the process. The Mo precursor was evaluated for thermal stability and volatility using thermogravimetric analysis and static vapor pressure measurements. Film properties were evaluated with ellipsometry, x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and secondary electron microscopy. The growth rate per cycle was determined to extend from 0.3 to 2.4 A/cycle with <4% nonuniformity (1-sigma) with-in-wafer across a 150 mm wafer for the investigated temperature range.

Volatility and high thermal stability in mid-to-late first-row transition-metal complexes containing 1,2,5-triazapentadienyl ligands.

Treatment of first-row transition-metal MCl(2) (M = Ni, Co, Fe, Mn, Cr) with 2 equiv of the potassium 1,2,5-triazapentadienyl salts K(tBuNNCHCHNR) (R = tBu, NMe(2)) afforded M(tBuNNCHCHNR)(2) in 18-73% isolated yields after sublimation. The X-ray crystal structures of these compounds show monomeric, tetrahedral molecular geometries, and magnetic moment measurements are consistent with high-spin electronic configurations. Complexes with R = tBu sublime between 155 and 175 °C at 0.05 Torr and have decomposition temperatures that range from 280 to 310 °C, whereas complexes with R = NMe(2) sublime at 105 °C at 0.05 Torr but decompose between 181 and 225 °C. This work offers new nitrogen-rich ligands that are related to widely used β-diketiminate and 1,3,5-triazapentadienyl ligands and demonstrates new complexes with properties suitable for use in atomic-layer deposition.

Atomic layer deposition of bismuth oxide using Bi(OCMe2iPr)3 and H2O

This is the publisher’s final pdf. The article is copyrighted by the American Vacuum Society and published by the American Institute of Physics Publishing. It can be found at: http://scitation.aip.org/content/avs/journal/jvsta.

Unusual stoichiometry control in the atomic layer deposition of manganese borate films from manganese bis(tris(pyrazolyl)borate) and ozone

The atomic layer deposition (ALD) of films with the approximate compositions Mn3(BO3)2 and CoB2O4 is described using MnTp2 or CoTp2 [Tp = tris(pyrazolyl)borate] with ozone. The solid state decomposition temperatures of MnTp2 and CoTp2 are ∼370 and ∼340 °C, respectively. Preparative-scale sublimations of MnTp2 and CoTp2 at 210 °C/0.05 Torr afforded >99% recoveries with <0.1% nonvolatile residues. Self-limited ALD growth was demonstrated at 325 °C for MnTp2 or CoTp2 with ozone as the coreactant. The growth rate for the manganese borate process was 0.19 A/cycle within the ALD window of 300–350 °C. The growth rate for the cobalt borate process was 0.39–0.42 A/cycle at 325 °C. X-ray diffraction of the as-deposited films indicated that they were amorphous. Atomic force microscopy of 35–36 nm thick manganese borate films grown within the 300–350 °C ALD window showed root mean square surface roughnesses of 0.4–0.6 nm. Film stoichiometries were assessed by x-ray photoelectron spectroscopy and time of flight-elasti...

Atomic layer deposition of bismuth oxide using Bi(OCMe{sub 2}{sup i}Pr){sub 3} and H{sub 2}O

This is the publisher’s final pdf. The article is copyrighted by the American Vacuum Society and published by the American Institute of Physics Publishing. It can be found at: http://scitation.aip.org/content/avs/journal/jvsta.

Atomic layer deposition of bismuth oxide using Bi(OCMe₂ [superscript i]Pr)₃ and H₂O

This is the publisher’s final pdf. The article is copyrighted by the American Vacuum Society and published by the American Institute of Physics Publishing. It can be found at: http://scitation.aip.org/content/avs/journal/jvsta.