Martin Brandstetter

Reversing the pump dependence of a laser at an exceptional point.

When two resonant modes in a system with gain or loss coalesce in both their resonance position and their width, a so-called exceptional point occurs, which acts as a source of non-trivial physics in a diverse range of systems. Lasers provide a natural setting to study such non-Hermitian degeneracies, as they feature resonant modes and a gain material as their basic constituents. Here we show that exceptional points can be conveniently induced in a photonic molecule laser by a suitable variation of the applied pump. Using a pair of coupled microdisk quantum cascade lasers, we demonstrate that in the vicinity of these exceptional points the coupled laser shows a characteristic reversal of its pump dependence, including a strongly decreasing intensity of the emitted laser light for increasing pump power.

High power terahertz quantum cascade lasers with symmetric wafer bonded active regions

We increased the active region/waveguide thickness of terahertz quantum cascade lasers with semi-insulating surface plasmon waveguides by stacking two symmetric active regions on top of each other, via a direct wafer bonding technique. In this way, we enhance the generated optical power in the cavity and the mode confinement. We achieved 470 mW peak output power in pulsed mode from a single facet at a heat sink temperature of 5 K and a maximum operation temperature of 122 K. Furthermore, the devices show a broad band emission spectrum over a range of 420 GHz, centered around 3.9 THz.

Gain and losses in THz quantum cascade laser with metal-metal waveguide.

Coupling of broadband terahertz pulses into metal-metal terahertz quantum cascade lasers is presented. Mode matched terahertz transients are generated on the quantum cascade laser facet of subwavelength dimension. This method provides a full overlap of optical mode and active laser medium. A longitudinal optical-phonon depletion based active region design is investigated in a coupled cavity configuration. Modulation experiments reveal spectral gain and (broadband) losses. The observed gain shows high dynamic behavior when switching from loss to gain around threshold and is clamped at total laser losses.

High performance InGaAs/GaAsSb terahertz quantum cascade lasers operating up to 142 K

We report on the demonstration of a maximum operating temperature of 142 K for InGaAs-based terahertz quantum cascade lasers. This result is achieved by using the alternative material combination In0.53Ga0.47As/GaAs0.51Sb0.49, lattice-matched to InP, which exhibits fabrication advantages over standard In0.53Ga0.47As/In0.52Al0.48As due to more suitable material parameters. An active region, based on a three-well phonon depletion design, with improved injection and extraction tunneling coupling, was designed. The devices exhibit threshold current densities of 0.75 kA/cm2 and provide peak optical powers up to 9 mW. A broad spectral emission range between 3.3 and 4 THz is measured.

Terahertz active photonic crystals for condensed gas sensing.

The terahertz (THz) spectral region, covering frequencies from 1 to 10 THz, is highly interesting for chemical sensing. The energy of rotational and vibrational transitions of molecules lies within this frequency range. Therefore, chemical fingerprints can be derived, allowing for a simple detection scheme. Here, we present an optical sensor based on active photonic crystals (PhCs), i.e., the pillars are fabricated directly from an active THz quantum-cascade laser medium. The individual pillars are pumped electrically leading to laser emission at cryogenic temperatures. There is no need to couple light into the resonant structure because the PhC itself is used as the light source. An injected gas changes the resonance condition of the PhC and thereby the laser emission frequency. We achieve an experimental frequency shift of 10−3 times the center lasing frequency. The minimum detectable refractive index change is 1.6 × 10−5 RIU.

Random lasers for broadband directional emission

Broadband coherent light sources are becoming increasingly important for sensing and spectroscopic applications, especially in the mid-infrared and terahertz (THz) spectral regions, where the unique absorption characteristics of a whole host of molecules are located. The desire to miniaturize such light emitters has recently lead to spectacular advances with compact on-chip lasers that cover both of these spectral regions. The long wavelength and the small size of the sources result in a strongly diverging laser beam that is difficult to focus on the target that one aims to perform spectroscopy with. Here, we introduce an unconventional solution to this vexing problem relying on a random laser to produce coherent broadband THz radiation as well as an almost diffraction limited far-field emission profile. Our random lasers do not require any fine-tuning and thus constitute a promising example of practical device applications for random lasing.

Dopant migration effects in terahertz quantum cascade lasers

We demonstrate that dopant migration and the resulting impurity scattering can strongly influence the performance of GaAs/Al0.15Ga0.85As terahertz quantum cascade lasers. A nominally symmetric structure allows us to compare the negative and positive bias behavior of the very same device. Dopants, migrated towards the upper laser level during sample growth, degrade the lasing performance due to enhanced impurity scattering rates. The consequences are a higher threshold current (+30%) and reduced optical output power (–29%) in the affected operating direction. This polarity dependent performance is reversed in an asymmetrically doped sample, which imitates the migration of dopants against the growth direction.

Influence of the facet type on the performance of terahertz quantum cascade lasers with double-metal waveguides

We investigate the influence of cleaved and dry chemically etched facets on the performance of terahertz quantum cascade lasers with double-metal waveguides. We theoretically show that the reflectivity and therefore also the mirror losses depend on the facet type. We fabricated devices employing both a cleaved and an etched facet, which show an asymmetric output characteristic. Furthermore, we compare the performance in terms of maximum operation temperature of lasers with each facet configuration. The results suggest that the devices are operated in a mirror loss dominated regime.

InAs based terahertz quantum cascade lasers

We demonstrate terahertz lasing emission from a quantum cascade structure, realized with InAs/AlAs0.16Sb0.84 heterostructures. Due to the lower effective electron mass, InAs based active regions are expected to provide a higher optical gain compared to structures consisting of GaAs or InGaAs. The growth by molecular beam epitaxy enabled the fabrication of monolayer-thick barriers, required for the active region, which is based on a 3-well resonant phonon depletion design. Devices were processed in a double-metal waveguide geometry to ensure high mode confinement and low optical losses. Lasing emission at 3.8 THz was observed at liquid helium temperatures by applying a magnetic field perpendicular to the layered structure in order to suppress parasitic scattering channels. These results demonstrate the feasibility of InAs based active regions for terahertz quantum cascade lasers, potentially enabling higher operating temperatures.

Subwavelength micropillar array terahertz lasers

We report on micropillar-based terahertz lasers with active pillars that are much smaller than the emission wavelength. These micropillar array lasers correspond to scaled-down band-edge photonic crystal lasers forming an active photonic metamaterial. In contrast to photonic crystal lasers which use significantly larger pillar structures, lasing emission is not observed close to high-symmetry points in the photonic band diagram, but in the effective medium regime. We measure stimulated emission at 4 THz for micropillar array lasers with pillar diameters of 5 µm. Our results not only demonstrate the integration of active subwavelength optics in a terahertz laser, but are also an important step towards the realization of nanowire-based terahertz lasers.