Martin Gerard Forrester

Charge-based scanning probe readback of nanometer-scale ferroelectric domain patterns at megahertz rates

We present a method for data storage in continuous ferroelectric (FE) media, applicable to storage systems based on one or more scanning probes. Written FE domains are read back in a destructive fashion by applying a constant voltage of magnitude greater than the coercive voltage, as is done in FE random access memory (FeRAM). The resulting flow of screening charges through the readback amplifier provides sufficient signal to allow readback of domains of minimum dimension of the order of 10 nm at MHz rates, orders of magnitude faster than previously demonstrated techniques for readback of domains in continuous FE media.

A MEMS read-write head for ferroelectric probe storage

We report a novel MEMS read-write head for probe data storage using ferroelectric (FE) media. In our FE storage approach, the minimum bit length is not dependent on the physical dimension of the writer electrode, which simplifies the writer fabrication. FE media has the advantages of high thermal stability, narrow domain walls, and low-voltage writability compared with magnetic storage. A read-write head based on MEMS technology is presented, along with process details. Preliminary test results on a scan stand show an obtainable areal density approaching 1 Tb/in2 with our prototype head and media.