Markus Siegert
Seagate Technology
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Publication
Featured researches published by Markus Siegert.
IEEE Transactions on Magnetics | 2009
Xiaobin Wang; Wenzhong Zhu; Markus Siegert; Dimitar V. Dimitrov
Spin torque induced magnetization switching variations are studied using experimental measurement and theoretical modeling. The study covers a wide time range, from the short time dynamic switching (10 ns) to the long time thermal switching (0.1 s). The modeling results agree well with the measurement data on switching mean and variation. Both data and model show different scaling behaviors of switching current variation and switching time variation as time scales down from the second to the nanosecond region. This study not only provides understanding of the physics involved, but also tools for making design tradeoffs between current switching magnitude, switching variation, switching speed, and thermal stability.
Nanotechnology | 2009
Martin Gerard Forrester; Joachim Ahner; Mark David Bedillion; Cedric Bedoya; Dierk Guenter Bolten; Kai-Chieh Chang; Gudrun de Gersem; Shan Hu; Earl C. Johns; Maissarath Nassirou; Jason Palmer; Andreas Roelofs; Markus Siegert; Shingo Tamaru; V. Vaithyanathan; Florin Zavaliche; Tong Zhao; Yongjun Zhao
We present a method for data storage in continuous ferroelectric (FE) media, applicable to storage systems based on one or more scanning probes. Written FE domains are read back in a destructive fashion by applying a constant voltage of magnitude greater than the coercive voltage, as is done in FE random access memory (FeRAM). The resulting flow of screening charges through the readback amplifier provides sufficient signal to allow readback of domains of minimum dimension of the order of 10 nm at MHz rates, orders of magnitude faster than previously demonstrated techniques for readback of domains in continuous FE media.
Applied Physics Letters | 2010
Olle Heinonen; Markus Siegert; Andreas Roelofs; Amanda K. Petford-Long; Martin Holt; K. d’Aquila; Wei Li
Structural and resistive changes in Ti-doped NiO resistive random access memory structures that occur upon electroforming have been investigated using hard x-ray microscopy. Electroforming leads to structural changes in regions of size up to about one micrometer, much larger than the grain size of the structure. Such changes are consistent with a migration of ionic species or defects during electroforming over regions containing many crystalline grains.
Archive | 2009
Andreas Roelofs; Markus Siegert; Venugopalan Vaithyanathan; Wei Tian; Yongchul Ahn; Muralikrishnan Balakrishnan; Olle Heinonen
Archive | 2007
Markus Siegert; Andreas Roelofs; Martin Gerard Forrester
Archive | 2008
Haiwen Xi; Xiaobin Wang; Dimitar V. Dimitrov; Paul E. Anderson; Harry Liu; Song S. Xue; Andreas Roelofs; Markus Siegert
Archive | 2009
Venugopalan Vaithyanathan; Markus Siegert; Wei Tian; Muralikrishnan Balakrishnan; Insik Jin
Archive | 2009
Markus Siegert; Michael Xuefei Tang; Andrew John Carter; Alan Xuguang Wang
Archive | 2007
Markus Siegert; Andreas Roelofs; Martin Gerard Forrester
Archive | 2008
Insik Jin; Wei Tian; Venugopalan Vaithyanathan; Cedric Bedoya; Markus Siegert