Andreas Roelofs
Seagate Technology
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Publication
Featured researches published by Andreas Roelofs.
Archive | 2007
A. L. Kholkin; Sergei V. Kalinin; Andreas Roelofs; Alexei Gruverman
This chapter describes the principles, theoretical background, recent developments, and applications of a local probe-based technique for nondestructive high-resolution ferroelectric domain imaging and manipulation—piezoresponse force microscopy (PFM). This technique has proven to be a powerful tool for the characterization of ferroelectric thin films, ceramics, and single crystals. Recent advances in application of PFM for studying a mechanism of polarization reversal at the nanoscale, domain dynamics, degradation effects, and size-dependent phenomena in ferroelectrics are reviewed in detail. Examples of using PFM for the characterization of various polar materials such as ferroelectric films, piezoelectric semiconductors, and ferroelectric relaxors are given.
Nanotechnology | 2009
Martin Gerard Forrester; Joachim Ahner; Mark David Bedillion; Cedric Bedoya; Dierk Guenter Bolten; Kai-Chieh Chang; Gudrun de Gersem; Shan Hu; Earl C. Johns; Maissarath Nassirou; Jason Palmer; Andreas Roelofs; Markus Siegert; Shingo Tamaru; V. Vaithyanathan; Florin Zavaliche; Tong Zhao; Yongjun Zhao
We present a method for data storage in continuous ferroelectric (FE) media, applicable to storage systems based on one or more scanning probes. Written FE domains are read back in a destructive fashion by applying a constant voltage of magnitude greater than the coercive voltage, as is done in FE random access memory (FeRAM). The resulting flow of screening charges through the readback amplifier provides sufficient signal to allow readback of domains of minimum dimension of the order of 10 nm at MHz rates, orders of magnitude faster than previously demonstrated techniques for readback of domains in continuous FE media.
Applied Physics Letters | 2010
Olle Heinonen; Markus Siegert; Andreas Roelofs; Amanda K. Petford-Long; Martin Holt; K. d’Aquila; Wei Li
Structural and resistive changes in Ti-doped NiO resistive random access memory structures that occur upon electroforming have been investigated using hard x-ray microscopy. Electroforming leads to structural changes in regions of size up to about one micrometer, much larger than the grain size of the structure. Such changes are consistent with a migration of ionic species or defects during electroforming over regions containing many crystalline grains.
Archive | 2004
Mark Ian Lutwyche; Earl C. Johns; Martin Gerard Forrester; Mark David Bedillion; Andreas Roelofs; Joachim Ahner; Robert Earl Rottmayer; Andre Liem; Edward Stephen Skalko; Xueshi Yang
Archive | 2009
Andreas Roelofs; Markus Siegert; Venugopalan Vaithyanathan; Wei Tian; Yongchul Ahn; Muralikrishnan Balakrishnan; Olle Heinonen
Archive | 2005
Andreas Roelofs; Martin Gerard Forrester; Joachim Ahner
Archive | 2012
Xiaobin Wang; Haiwen Xi; Hongyue Liu; Insik Jin; Andreas Roelofs; Eileen Yan; Dimitar V. Dimitrov
Archive | 2008
Haiwen Xi; Dimitar V. Dimitrov; Andreas Roelofs; Xiaobin Wang; Paul E. Anderson; Hongyue Liu
Archive | 2007
Markus Siegert; Andreas Roelofs; Martin Gerard Forrester
Archive | 2007
Andreas Roelofs; Martin Gerard Forrester