Masaru Matsushima
Hitachi
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Publication
Featured researches published by Masaru Matsushima.
Applied Physics Letters | 1994
Yukihiro Kiyota; Masaru Matsushima; Yutaka Kaneko; Masafumi Kanetomo; Y. Tamaki; Kazuhiko Muraki; Taroh Inada
Ultrashallow p‐type layers below 30 nm were formed by a rapid vapor‐phase doping involving a lamp annealing system. A new one‐wafer‐type apparatus with tungsten lamps has been developed for use in this process. Temperatures at five different points on a 4‐in. wafer are in situ monitored by infrared radiative thermometers with optical fibers to maintain a uniform temperature profile across the wafer. By using hydrogen and B2H6 gas, an ultrashallow boron‐doped layer of below 30 nm with the surface boron concentration of 5.8×1019 cm−3 was formed after 10 s of 900 °C annealing with a B2H6 flow rate of 100 ml/min.
Archive | 2009
Go Miya; Seiichiro Kanno; Hiroyuki Kitsunai; Masaru Matsushima; Toru Shuto
Archive | 2006
Masaru Matsushima
Archive | 1994
Tetsuya Hamaguchi; Yukio Katou; Masaaki Matsumoto; Masaru Matsushima
Archive | 2009
Seiichiro Kanno; Hiroyuki Kitsunai; Masaru Matsushima; Toru Shuto; Kazuyuki Ikenaga
Archive | 2011
Daisuke Muto; 武藤 大輔; Masanori Watanabe; 眞徳 渡部; Hiroshi Tsuji; 浩志 辻; Masaru Matsushima; 松島 勝
Archive | 2009
Masahiro Koyama; Hironori Ogawa; Nobuo Shibata; Masaru Matsushima; Toshinori Kobayashi; Shuichi Nakagawa
Archive | 1993
Tetsuya Hamaguchi; Yukio Kato; Masaaki Matsumoto; Masaru Matsushima; 幸男 加藤; 勝 松島; 真明 松本; 哲也 浜口
Archive | 2010
Hiroyuki Kitsunai; Seiichiro Kanno; Masaru Matsushima; Shuichi Nakagawa; Go Miya
Archive | 2011
Daisuke Muto; Masanori Watanabe; Masaru Matsushima; Shuichi Nakagawa; Masahiro Akatsu; Yusuke Tanba; Satoshi Okada
