Matthew A. Bloodgood

Low-Frequency Electronic Noise in Quasi-1D TaSe3 van der Waals Nanowires

We report results of investigation of the low-frequency electronic excess noise in quasi-1D nanowires of TaSe3 capped with quasi-2D h-BN layers. Semimetallic TaSe3 is a quasi-1D van der Waals material with exceptionally high breakdown current density. It was found that TaSe3 nanowires have lower levels of the normalized noise spectral density, SI/I2, compared to carbon nanotubes and graphene (I is the current). The temperature-dependent measurements revealed that the low-frequency electronic 1/f noise becomes the 1/f2 type as temperature increases to ∼400 K, suggesting the onset of electromigration (f is the frequency). Using the Dutta-Horn random fluctuation model of the electronic noise in metals, we determined that the noise activation energy for quasi-1D TaSe3 nanowires is approximately EP ≈ 1.0 eV. In the framework of the empirical noise model for metallic interconnects, the extracted activation energy, related to electromigration is EA = 0.88 eV, consistent with that for Cu and Al interconnects. Our results shed light on the physical mechanism of low-frequency 1/f noise in quasi-1D van der Waals semimetals and suggest that such material systems have potential for ultimately downscaled local interconnect applications.

Low-Frequency Current Fluctuations and Sliding of the Charge Density Waves in Two-Dimensional Materials

We investigated low-frequency noise in two-dimensional (2D) charge density wave (CDW) systems, 1 T-TaS2 thin films, as they were driven from the nearly commensurate (NC) to incommensurate (IC) CDW phases by voltage and temperature stimuli. This study revealed that noise in 1 T-TaS2 has two pronounced maxima at the bias voltages, which correspond to the onset of CDW sliding and the NC-to-IC phase transition. We observed unusual Lorentzian features and exceptionally strong noise dependence on electric bias and temperature, leading to the conclusion that electronic noise in 2D CDW systems has a unique physical origin different from known fundamental noise types. We argue that noise spectroscopy can serve as a useful tool for understanding electronic transport phenomena in 2D CDW materials characterized by coexistence of different phases and strong pinning.

Unique features of the generation–recombination noise in quasi-one-dimensional van der Waals nanoribbons

We describe the low-frequency current fluctuations, i.e. electronic noise, in quasi-one-dimensional ZrTe3 van der Waals nanoribbons, which have recently attracted attention owing to their extraordinary high current carrying capacity. Whereas the low-frequency noise spectral density, SI/I2, reveals 1/f behavior near room temperature, it is dominated by the Lorentzian bulges of the generation-recombination noise at low temperatures (I is the current and f is the frequency). Unexpectedly, the corner frequency of the observed Lorentzian peaks shows strong sensitivity to the applied source-drain bias. This dependence on electric field can be explained by the Frenkel-Poole effect in the scenario where the voltage drop happens predominantly on the defects, which block the quasi-1D conduction channels. We also have found that the activation energy of the characteristic frequencies of the G-R noise in quasi-1D ZrTe3 is defined primarily by the temperature dependence of the capture cross-section of the defects rather than by their energy position. These results are important for the application of quasi-1D van der Waals materials in ultimately downscaled electronics.

Monoclinic structures of niobium trisulfide

Two new polymorphs of niobium trisulfide are established by single crystal x-ray diffraction. NbS3-iv crystallizes in the monoclinic space group P21/c with lattice parameters a = 6.7515(5) A, b = 4.9736(4) A, c = 18.1315(13) A, and β = 90.116(2)°. Its structure is based on chains of [NbS6] trigonal prisms containing Nb–Nb pairs with a bond length of 3.0448(8) A; this pairing causes the chains to corrugate slightly along their axis, a feature also present in triclinic NbS3-i that leads to semiconductor properties. The stacking arrangement of chains is different in these polymorphs, however, with NbS3-i having an ABCDE repeating sequence of chain bilayers and NbS3-iv having an AB repeating sequence. HRTEM studies show the presence of topotactically-oriented intergrown zones and numerous dislocations, which result in mosaic structuring. A second new polymorph, NbS3-v, crystallizes in the monoclinic space group P21/m with lattice parameters a = 4.950(5) A, b = 3.358(4) A, c = 9.079(10) A, β = 97.35(2)°. In co...

Low-frequency noise in quasi-1D TaSe 3 van der Waals nanowires

We review results of our studies of the low-frequency electronic noise in quasi-1D TaSe<inf>3</inf> nanowires of. The semi-metallic TaSe<inf>3</inf> is a quasi-1D van der Waals material with an exceptionally high breakdown current density. Our noise studies showed that TaSe<inf>3</inf> nanowires have lower levels of the normalized noise spectral density, S<inf>I</inf>/I², compared to carbon nanotubes and graphene. The temperature-dependent measurements revealed that the low-frequency 1/f noise becomes the 1/f²-type as temperature increases to ∼400 K, suggesting the onset of electromigration. Using the Dutta-Horn random fluctuation model of the electronic noise, we determined that the noise activation energy for quasi-1D TaSe<inf>3</inf> nanowires is approximately E<inf>P</inf>≈1.0 eV. From the empirical noise model for interconnects, the extracted activation energy, related to electromigration, is E<inf>A</inf>=0.88 eV, consistent with that for Cu and Al interconnects. Our results suggest that TaSe<inf>3</inf> nanowires and similar systems have potential for ultimately downscaled local interconnect applications.

Quasi-1D van der Waals materials as high current-density local interconnects (Conference Presentation)

The continuous downscaling of interconnect dimensions in combination with the introduction of low-k dielectrics has increased the number of heat dissipation, integration and reliability challenges in modern electronics. As a result, there is a strong need for new materials that have high current-carrying capacity for applications as nanoscale interconnects. In this presentation, we show that quasi-one-dimensional (1D) van der Waals metals such as TaSe3 have excellent breakdown current density exceeding that of 5 MA/cm2. This value is above that currently achievable in conventional copper or aluminum wires. The quasi-1D van der Waals materials are characterized by strong bonds along one dimension and weak van der Waals bonds along two other dimensions. The material for this study was grown by the chemical vapor transport (CVT) method. Both mechanical and chemical exfoliation methods were used to fabricate nanowires with lateral dimensions below 100 nm. The dimensions of the quasi-1D nanowires were verified with scanning electron microscopy (SEM) and atomic force microscopy (AFM). The metal (Ti/Au) contacts for the electrical characterization were deposited using electron beam evaporation (EBE). The measurements were conducted on a number of prototype interconnects with multiple electric contacts to ensure reproducibility. The obtained results suggest that quasi-1D van der Waals metals present a feasible alternative to conventional copper interconnects in terms of the current-carrying capacity and the breakdown current-density. This work was supported, in part, by the SRC and DARPA through STARnet Center for Function Accelerated nanoMaterial Engineering (FAME).