Tina T. Salguero

Phonon and thermal properties of exfoliated TaSe2 thin films

We report on the phonon and thermal properties of thin films of tantalum diselenide (2H-TaSe2) obtained via the graphene-like mechanical exfoliation of crystals grown by chemical vapor transport. The ratio of the intensities of the Raman peak from the Si substrate and the E2g peak of TaSe2 presents a convenient metric for quantifying film thickness. The temperature coefficients for two main Raman peaks, A1g and E2g, are -0.013 and -0.0097 cm-1/oC, respectively. The Raman optothermal measurements indicate that the room temperature thermal conductivity in these films decreases from its bulk value of ~16 W/mK to ~9 W/mK in 45-nm thick films. The measurement of electrical resistivity of the field-effect devices with TaSe2 channels indicates that heat conduction is dominated by acoustic phonons in these van der Waals films. The scaling of thermal conductivity with the film thickness suggests that the phonon scattering from the film boundaries is substantial despite the sharp interfaces of the mechanically cleaved samples. These results are important for understanding the thermal properties of thin films exfoliated from TaSe2 and other metal dichalcogenides, as well as for evaluating self-heating effects in devices made from such materials.

Nanostructured Scrolls from Graphene Oxide for Microjet Engines

Layered heterostructures containing graphene oxide (GO) nanosheets and 20-35 nm bimetal coatings can detach easily from a Si substrate upon sonication-spontaneously forming freestanding, micrometer-sized scrolls with GO on the outside-due to a combination of material stresses and weak bonding between GO layers. Simple procedures can tune the scroll diameters by varying the thicknesses of the metal films, and these results are confirmed by both experiment and modeling. The selection of materials determines the stresses that control the rolling behavior, as well as the functionality of the structures. In the GO/Ti/Pt system, the Pt is located within the interior of the scrolls, which can become self-propelled microjet engines through O2 bubbling when suspended in aqueous H2O2.

Zone-Folded Phonons and the Commensurate–Incommensurate Charge-Density-Wave Transition in 1T-TaSe2 Thin Films

Bulk 1T-TaSe2 exhibits unusually high charge density wave (CDW) transition temperatures of 600 and 473 K below which the material exists in the incommensurate (I-CDW) and the commensurate (C-CDW) charge-density-wave phases, respectively. The (13)(1/2) × (13)(1/2) C-CDW reconstruction of the lattice coincides with new Raman peaks resulting from zone-folding of phonon modes from middle regions of the original Brillouin zone back to Γ. The C-CDW transition temperatures as a function of film thickness are determined from the evolution of these new Raman peaks, and they are found to decrease from 473 to 413 K as the film thicknesses decrease from 150 to 35 nm. A comparison of the Raman data with ab initio calculations of both the normal and C-CDW phases gives a consistent picture of the zone-folding of the phonon modes following lattice reconstruction. The Raman peak at ∼154 cm(-1) originates from the zone-folded phonons in the C-CDW phase. In the I-CDW phase, the loss of translational symmetry coincides with a strong suppression and broadening of the Raman peaks. The observed change in the C-CDW transition temperature is consistent with total energy calculations of bulk and monolayer 1T-TaSe2.Bulk 1T-TaSe2 exhibits unusually high charge density wave (CDW) transition temperatures of 600 K and 473 K below which the material exists in the incommensurate (I-CDW) and the commensurate (C-CDW) charge-density-wave phases, respectively. The C-CDW reconstruction of the lattice coincides with new Raman peaks resulting from zone-folding of phonon modes from middle regions of the original Brillouin zone back to the Gamma point. The C-CDW transition temperatures as a function of film thickness are determined from the evolution of these new Raman peaks and they are found to decrease from 473K to 413K as the film thicknesses decrease from 150 nm to 35 nm. A comparison of the Raman data with ab initio calculations of both the normal and C-CDW phases gives a consistent picture of the zone-folding of the phonon modes following lattice reconstruction. In the I-CDW phase, the loss of translational symmetry coincides with a strong suppression and broadening of the Raman peaks. The observed change in the C-CDW transition temperature is consistent with total energy calculations of bulk and monolayer 1T-TaSe2.

A charge-density-wave oscillator based on an integrated tantalum disulfide–boron nitride–graphene device operating at room temperature

The charge-density-wave (CDW) phase is a macroscopic quantum state consisting of a periodic modulation of the electronic charge density accompanied by a periodic distortion of the atomic lattice in quasi-1D or layered 2D metallic crystals. Several layered transition metal dichalcogenides, including 1T-TaSe2, 1T-TaS2 and 1T-TiSe2 exhibit unusually high transition temperatures to different CDW symmetry-reducing phases. These transitions can be affected by the environmental conditions, film thickness and applied electric bias. However, device applications of these intriguing systems at room temperature or their integration with other 2D materials have not been explored. Here, we demonstrate room-temperature current switching driven by a voltage-controlled phase transition between CDW states in films of 1T-TaS2 less than 10 nm thick. We exploit the transition between the nearly commensurate and the incommensurate CDW phases, which has a transition temperature of 350 K and gives an abrupt change in current accompanied by hysteresis. An integrated graphene transistor provides a voltage-tunable, matched, low-resistance load enabling precise voltage control of the circuit. The 1T-TaS2 film is capped with hexagonal boron nitride to provide protection from oxidation. The integration of these three disparate 2D materials in a way that exploits the unique properties of each yields a simple, miniaturized, voltage-controlled oscillator suitable for a variety of practical applications.

Nanoscience of an Ancient Pigment

We describe monolayer nanosheets of calcium copper tetrasilicate, CaCuSi(4)O(10), which have strong near-IR luminescence and are amenable to solution processing methods. The facile exfoliation of bulk CaCuSi(4)O(10) into nanosheets is especially surprising in view of the long history of this material as the colored component of Egyptian blue, a well-known pigment from ancient times.

All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits

We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe2–Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.

Local bonding and atomic environments in Ni-catalyzed complex hydrides.

The local bonding and atomic environments in the Ni-catalyzed destabilized system LiBH4/MgH2 and the quaternary borohydride-amide phase Li3BN2H8, were studied by x-ray absorption spectroscopy. In both cases the Ni catalyst was introduced as NiCl2 and a qualitative comparison of the Ni K-edge near-edge structure suggests the Ni2+ is reduced to primarily Ni0 after ball milling. The extended fine structure of the Ni K edge indicates that the Ni is coordinated by approximately 3 boron atoms with an interatomic distance of approximately 2.1 A and approximately 11 Ni atoms in a split shell at around 2.5 and 2.8 A. These results, and the lack of long-range order, suggest that the Ni is present as a disordered nanocluster with a local structure similar to that of Ni3B. In the fully hydrogenated phase of LiBH4/MgH2 a small amount Mg2NiHx was also present. Surface calculations performed using density functional theory suggest that the lowest kinetic barrier for H2 chemisorption occurs on the Ni3B(100) surface.

Low-Frequency Electronic Noise in Quasi-1D TaSe3 van der Waals Nanowires

We report results of investigation of the low-frequency electronic excess noise in quasi-1D nanowires of TaSe3 capped with quasi-2D h-BN layers. Semimetallic TaSe3 is a quasi-1D van der Waals material with exceptionally high breakdown current density. It was found that TaSe3 nanowires have lower levels of the normalized noise spectral density, SI/I2, compared to carbon nanotubes and graphene (I is the current). The temperature-dependent measurements revealed that the low-frequency electronic 1/f noise becomes the 1/f2 type as temperature increases to ∼400 K, suggesting the onset of electromigration (f is the frequency). Using the Dutta-Horn random fluctuation model of the electronic noise in metals, we determined that the noise activation energy for quasi-1D TaSe3 nanowires is approximately EP ≈ 1.0 eV. In the framework of the empirical noise model for metallic interconnects, the extracted activation energy, related to electromigration is EA = 0.88 eV, consistent with that for Cu and Al interconnects. Our results shed light on the physical mechanism of low-frequency 1/f noise in quasi-1D van der Waals semimetals and suggest that such material systems have potential for ultimately downscaled local interconnect applications.

Chromism of Bi2WO6 in single crystal and nanosheet forms

Nanosheets of Bi2WO6 with lateral dimensions of 1–2 μm and thicknesses of 5–15 nm were prepared using Cs4W11O362− nanosheets as the tungsten oxide precursor and lateral template. The formation of these nanosheets was followed by electron microscopy and powder X-ray diffraction techniques. The isolated Bi2WO6 nanosheet product was characterized with respect to structure, morphology, spectroscopic properties, and optical properties. The bandgap energy of Bi2WO6 nanosheets is relatively large at ∼3.1 eV. The chromism of these sheets with respect to UV irradiation and Li+ intercalation was examined in detail. The UV-induced photochromism of dispersed Bi2WO6 nanosheets is highly dependent on the solvent environment, and the initial color change from white to black is reversible. The photochromic properties of “flowerlike” and single crystal Bi2WO6 were evaluated as well. Another color change, pale yellow to brown-black, occurred when lithium ions were intercalated into the Bi2WO6 lattice using n-butyl lithium. Reaction of lithiated Bi2WO6 with water yielded nanofragments of Bi2WO6 rather than nanosheets.

Exfoliation of Egyptian Blue and Han Blue, Two Alkali Earth Copper Silicate- based Pigments

In a visualized example of the ancient past connecting with modern times, we describe the preparation and exfoliation of CaCuSi4O10 and BaCuSi4O10, the colored components of the historic Egyptian blue and Han blue pigments. The bulk forms of these materials are synthesized by both melt flux and solid-state routes, which provide some control over the crystallite size of the product. The melt flux process is time intensive, but it produces relatively large crystals at lower reaction temperatures. In comparison, the solid-state method is quicker yet requires higher reaction temperatures and yields smaller crystallites. Upon stirring in hot water, CaCuSi4O10 spontaneously exfoliates into monolayer nanosheets, which are characterized by TEM and PXRD. BaCuSi4O10 on the other hand requires ultrasonication in organic solvents to achieve exfoliation. Near infrared imaging illustrates that both the bulk and nanosheet forms of CaCuSi4O10 and BaCuSi4O10 are strong near infrared emitters. Aqueous CaCuSi4O10 and BaCuSi4O10 nanosheet dispersions are useful because they provide a new way to handle, characterize, and process these materials in colloidal form.