Network


Latest external collaboration on country level. Dive into details by clicking on the dots.

Hotspot


Dive into the research topics where Matthias Künle is active.

Publication


Featured researches published by Matthias Künle.


advanced semiconductor manufacturing conference | 2014

Uniformity improvement for 200 mm APCVD epitaxial Si film by retrofit of Applied Materials Epi Centura

Matthias Künle; Johannes Baumgartl; Thomas Ackermann

An upgrade kit for the 200 mm Applied Materials Epi Centura was released. The retrofit includes an alignment tool for the setup of the process kit, a motorized lift as well as a new susceptor design. The hardware parts were installed in an APCVD (Atmospheric Pressure Chemical Vapor Deposition) production tool and tested in a production environment. The upgrade kit enables a reduction of the total range (max-min value) of the epi film thickness profile and a stable repeatability of the deposition process. A qualitative assessment of the new hardware during the production of an electrical device was carried out by analyzing sigma values of a PCM (Process Control Monitoring) parameter which is highly sensitive to variations in the epi thickness. The sigma of the PCM parameter from several lots, processed prior to the retrofit of the chamber and processed in the same chamber in the retrofitted state were compared and a reduction of the sigma value was observed when using the upgrade kit for the epi deposition.


Archive | 2015

VERFAHREN ZUM ERZEUGEN EINES GRABENS UNTER VERWENDUNG VON EPITAKTISCHEM LATERALEM ÜBERWACHSEN UND TIEFE VERTIKALE GRABENSTRUKTUR

Johannes Baumgartl; Georg Ehrentraut; Christoph Gruber; Andreas Haghofer; Ravi Keshav Joshi; Matthias Künle; Martin Pölzl; Jürgen Steinbrenner


Archive | 2017

Halbleitervorrichtung, die einen vertikalen PN-Übergang zwischen einem Bodybereich und einem Driftbereich enthält

Michael Hutzler; Ralf Siemieniec; Georg Ehrentraut; Matthias Künle


Archive | 2016

A method for the manufacture of semiconductor devices including a deposition of crystalline silicon in the trenches

Johannes Baumgartl; Matthias Künle


Archive | 2015

A method for producing a trench by using an epitaxial lateral over growth and deep vertical structure grave

Johannes Baumgartl; Georg Ehrentraut; Christoph Gruber; Andreas Haghofer; Ravi Keshav Joshi; Matthias Künle; Martin Pölzl; Jürgen Steinbrenner


Archive | 2015

Halbleiterwafer und Verfahren zur Bearbeitung eines Halbleiterwafers Semiconductor wafer and method of processing a semiconductor wafer

Ravi Keshav Joshi; Markus Kahn; Matthias Künle; Gerhard Schmidt; Martin Sporn; Jürgen Steinbrenner


Archive | 2015

Verfahren zum erzeugen eines grabens unter verwendung von epitaktischem lateralem überwachsen und tiefe vertikale grabenstruktur A method of producing a trench using epitaxial lateral overgrown and deep vertical grave structure

Johannes Baumgartl; Georg Ehrentraut; Christoph Gruber; Andreas Haghofer; Ravi Keshav Joshi; Matthias Künle; Martin Pölzl; Jürgen Steinbrenner


Archive | 2015

Herstellen einer Halbleitervorrichtung durch Epitaxie

Daniel Schlögl; Matthias Künle; Erwin Lercher; Johannes Baumgartl; Hans-Joachim Schulze; Christoph Weiss


Archive | 2015

Herstellen einer Halbleitervorrichtung durch Epitaxie Fabricating a semiconductor device by epitaxy

Daniel Schlögl; Matthias Künle; Erwin Lercher; Johannes Baumgartl; Hans-Joachim Schulze; Christoph Weiss


Archive | 2014

Kohlenstoffschichten für Hochtemperaturprozesse

Günter Denifl; Thomas Grille; Ursula Hedenig; Joachim Hirschler; Markus Kahn; Matthias Künle; Daniel Maurer; Roland Mönnich; Helmut Schönherr

Collaboration


Dive into the Matthias Künle's collaboration.

Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Researchain Logo
Decentralizing Knowledge