Michael Bohl Jenner

0.35 μm CMOS T/R Switch for 2.4 GHz Short Range Wireless Applications

This paper describes the design and implementation of a transmit/receive switch for 2.4 GHz ISM band applications. The T/R switch is implemented in a 0.35 μm bulk CMOS process and it occupies 150 μm · 170 μm of die area. A parasitic MOSFET model including bulk resistance is used to optimize the physical dimensions of the transistors with regard to insertion loss and isolation. The measured insertion loss is 1.3 dB without port matching. Simulations using measured s-parameters indicate that an insertion loss of 0.8 dB can be obtained with a conjugate match. The measured isolation is 42 dB and the maximum transmit power is 16 dBm.

UTRA/FDD RF Transceiver Requirements

Unified RF requirements are derived for an UMTS Terrestrial RadioAccess/Frequency Division Duplex (UTRA/FDD) compliant mobile transceiver. Aset of transceiver requirements are proposed with consideration to systemissues including duplex aspects. From these design-compatible requirements areproposed for each functional block in the transceiver.

Microwave on-wafer characterization of three-port devices using shield-based test-fixtures

The capability of shield-based test-fixture design used in conjunction with three-port device measurements is demonstrated. The reduction of forward coupling and common-ground parasitics facilitates simple de-embedding that can easily be applied to multi-port measurements. The procedure is detailed and the capability of the method is demonstrated with gigahertz device measurements.