Michael Dr. Rüb

A novel trench concept for the fabrication of compensation devices

In this paper we propose a novel trench based concept for compensation devices. Our approach includes the conformal deposition of two epitaxial layers in the trench. We present simulation results indicating an improvement in Rdson*A by more than 50 % versus 600V CoolMOS as todays benchmark in compensation devices. Furthermore we demonstrate the successful implementation of the necessary single processes such as deep trench etch (aspect ratio 12:1) and conformal defect free epitaxy.

High-energy ion projection for deep ion implantation as a low cost high throughput alternative for subsequent epitaxy processes

Three-dimensional (3D) doping into depths up to 40 μm is of great interest for numerous device types. In particular, the production of high-power devices requires low cost vertically structured doping. State of the art epitaxial growth combined with diffusion and/or low-energy ion implantation is time consuming and cost intensive. We suggest 3D structured high-energy ion projection implantation as a simple cost effective and reliable alternative. This method allows controlled fast doping with high homogeneity and reproducibility. This article outlines some details of a feasibility study of the technique and discusses advantages and problems.

A 600V 8.7Ohmmm 2 Lateral Superjunction Transistor

In this work we present for the first time experimental results and corresponding device simulations for high voltage lateral superjunction MOSFETs. We investigated experimentally various degrees of compensation for the lateral compensation structure and improved additionally the chip performance by optimizing the layout. We also realized different layouts in order to improve the chip performance. We show that a blocking voltage (BV) of 640V is achieved. Devices blocking above 600V achieve an on-resistance of 7.1Omega, which corresponds to a Rds,on times A of 8.7Omegamm2