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Michael Friedemann

Advanced Micro Devices

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Publication

Featured researches published by Michael Friedemann.

Archive | 2003

Method of forming a conductive barrier layer having improve adhesion and resistivity characteristics

Michael Friedemann; Volker Kahlert

Archive | 2007

Method of forming a copper-based metallization layer including a conductive cap layer by an advanced integration regime

Axel Preusse; Michael Friedemann; Robert Seidel; Berit Freudenberg

Archive | 2005

Method of forming a conductive barrier layer within critical openings by a final deposition step after a re-sputter deposition

Michael Friedemann; Volker Kahlert

Archive | 2004

Barrier layer including a titanium nitride liner for a copper metallization layer including a low-k dielectric

Volker Kahlert; Michael Friedemann

Archive | 2003

Method of forming a conductive barrier layer having improved coverage within critical openings

Michael Friedemann; Volker Kahlert

Archive | 2008

Verfahren zur Herstellung einer kupferbasierten Metallisierungsschicht mit einer leitenden Deckschicht durch ein fortschrittliches Integrationsschema

Axel Preusse; Michael Friedemann; Robert Seidel; Berit Freudenberg

Archive | 2007

Verfahren zur Herstellung einer Kupfer-basierten Metallisierungsschicht mit einer leitenden Deckschicht durch ein verbessertes Integrationsschema A process for preparing a copper-based metallization layer with a conductive outer layer by an improved integration scheme

Berit Freudenberg; Michael Friedemann; Axel Preusse; Robert Seidel

Archive | 2007

A process for preparing a copper-based metallization layer with a conductive outer layer by an advanced integration scheme

Berit Freudenberg; Michael Friedemann; Axel Preusse; Robert Seidel

Archive | 2005

Barrierenschicht mit einer Titannitridbeschichtung für eine Kupfermetallisierungsschicht, die ein Dielektrikum mit kleinem epsilon aufweist

Volker Kahlert; Michael Friedemann

Archive | 2005

Verfahren zur Herstellung einer leitenden Barrierenschicht in kritischen Öffnungen mittels eines abschließenden Abscheideschritts nach einer Rück-Sputter-Abscheidung

Michael Friedemann; Volker Kahlert

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Collaboration

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Volker Kahlert

Advanced Micro Devices

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Berit Freudenberg

Advanced Micro Devices

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Robert Seidel

GlobalFoundries

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Axel Preusse

GlobalFoundries

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Axel Preusse

GlobalFoundries

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