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Volker Kahlert

Advanced Micro Devices

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Publication

Featured researches published by Volker Kahlert.

international symposium on vlsi technology, systems, and applications | 2007

Implementation of Robust Nickel Alloy Salicide Process for High-Performance 65nm SOI CMOS Manufacturing

Jay W. Strane; David E. Brown; Christian Lavoie; Jun Suenaga; Bala Haran; Patrick Press; Paul R. Besser; Philip L. Flaitz; Michael A. Gribelyuk; Thorsten Kammler; Igor Peidous; Huajie Chen; Stephan Waidmann; Asa Frye; Patrick W. DeHaven; Anthony G. Domenicucci; Conal E. Murray; Randolph F. Knarr; H.J. Engelmann; Christof Streck; Volker Kahlert; Sadanand V. Deshpande; Effendi Leobandung; John G. Pellerin; Jaga Jagannathan

Addition of Pt to Ni silicide produces a robust [NixPt(1-x)]Si, which shows an improved morphological stability, an important reduction in encroachment defect density, a reduced tendency to form NiSi2 and significant variations in monosilicide texture without degrading the device performance or the yield of high-performance 65 nm SOI technologies.

Archive | 2006

Technique for strain engineering in si-based transistors by using embedded semiconductor layers including atoms with high covalent radius

Christof Streck; Volker Kahlert; Alexander Hanke

Archive | 2002

Metallization process sequence for a barrier metal layer

Volker Kahlert; Frank Koschinsky; Peter Hübler

Archive | 2003

Method of forming a conductive barrier layer having improve adhesion and resistivity characteristics

Michael Friedemann; Volker Kahlert

Archive | 2006

TECHNIQUE FOR FORMING NICKEL SILICIDE BY DEPOSITING NICKEL FROM A GASEOUS PRECURSOR

Christof Streck; Volker Kahlert; Alexander Hanke

Archive | 2006

METHOD OF FORMING AN INSULATING CAPPING LAYER FOR A COPPER METALLIZATION LAYER

Joerg Hohage; Matthias Lehr; Volker Kahlert

Archive | 2006

Method of forming an insulating capping layer for a copper metallization layer by using a silane reaction

Joerg Hohage; Matthias Lehr; Volker Kahlert

Microelectronic Engineering | 2006

Tuning nickel silicide properties using a lamp based RTA, a heat conduction based RTA or a furnace anneal

Stephan Waidmann; Volker Kahlert; Christof Streck; Patrick Press; Thorsten Kammler; K. Dittmar; Inka Zienert; Jochen Rinderknecht

Archive | 2009

Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer

Christof Streck; Volker Kahlert; Alexander Hanke

Archive | 2006

Etch stop layer for a metallization layer with enhanced adhesion, etch selectivity and hermeticity

Joerg Hohage; Matthias Lehr; Volker Kahlert

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Collaboration

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Christof Streck

Advanced Micro Devices

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Michael Friedemann

Advanced Micro Devices

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Alexander Hanke

Advanced Micro Devices

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Matthias Lehr

Advanced Micro Devices

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Frank Koschinsky

Advanced Micro Devices

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Jörg Hohage

Advanced Micro Devices

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Joerg Hohage

GlobalFoundries

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Patrick Press

Advanced Micro Devices

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Kai Frohberg

Advanced Micro Devices

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Karsten Wieczorek

Advanced Micro Devices

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