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Dive into the research topics where Michael H. Kaneshiro is active.

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Featured researches published by Michael H. Kaneshiro.


international symposium on low power electronics and design | 1996

A graded-channel MOS (GCMOS) VLSI technology for low power DSP applications

Jun Ma; Han-Bin Liang; Michael H. Kaneshiro; Carl Kyono; Robert A. Pryor; Ken Papworth; Sunny Cheng

Graded-Channel MOS (GCMOS) VLSI technology has been developed to meet the growing demand for low power and high performance applications. In this paper, it will be shown that, compared with conventional CMOS, the GCMOS device offers the advantage of significantly higher drive current, capable of lower threshold voltage with improved punchthrough resistance, lower body effect and lower series resistance, thus making it most suitable for applications that require both high performance and low power consumption, such as DSPs. This is demonstrated, for the first time, by much improved low voltage circuit performance of a DSP logic circuit fabricated using a 0.5 /spl mu/m GCMOS process. At 1.8 V, a 30% speed improvement over CMOS is achieved, and the power-delay product is reduced by 25%.


international symposium on low power electronics and design | 1997

Graded-channel MOSFET (GCMOSFET) for high performance, low voltage DSP applications

Jun Ma; Han-Bin Liang; Robert A. Pryor; Sunny Cheng; Michael H. Kaneshiro; Carl Kyono; Ken Papworth


Archive | 1997

FET with stable threshold voltage and method of manufacturing the same

Vida Ilderem; Michael H. Kaneshiro; Diann Dow


Archive | 1994

Insulated gate field effect transistor and method for fabricating

Michael H. Kaneshiro; Diann Dow


Archive | 1994

Method for fabricating insulated gate field effect transistor having subthreshold swing

Vida Ilderem Burger; Michael H. Kaneshiro; Diann Dow; Kevin M. Klein; Michael P. Masquelier; E. James Prendergast


Archive | 1995

Insulated gate field effect transistor and method of fabricating

Michael H. Kaneshiro; Diann Dow


Archive | 2001

Procede de fabrication d'un circuit integre a heterojonction bicmos

Vida Ilderem Burger; Phillip W Dahl; Jay P. John; Michael H. Kaneshiro; James A. Kirchgessner; Ik-Sung Lim; Richard W Mauntel; John W Steele; David L Stolfa


Archive | 2001

Verfahren zur herstellung einer heteroübergang-bicmos-integrierter schaltung A process for preparing a heterojunction BiCMOS integrated circuit

Jay P. John; James A. Kirchgessner; Ik-Sung Lim; Michael H. Kaneshiro; Vida Ilderem Burger; Phillip W Dahl; David L Stolfa; Richard W Mauntel; John W Steele


Archive | 1996

FET mit stabiler Schwellwertspannung und dessen Herstellungsverfahren FET with stable threshold voltage and its manufacturing method

Vida Ilderem; Michael H. Kaneshiro; Diann Dow


Archive | 1996

FET mit stabiler Schwellwertspannung und dessen Herstellungsverfahren

Diann Dow; Vida Ilderem; Michael H. Kaneshiro

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Ik-Sung Lim

Freescale Semiconductor

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