Vida Ilderem

The Effects of Implanted Nitrogen on Diffusion of Boron and Evolution of Extended Defects

We studied effects of nitrogen on reduction of boron diffusion in BF 2 -implanted source/drain regions of a p-channel MOSFET. Evolution of extended defects induced by nitrogen implantation in silicon and its dependence on implant energy were investigated. Characterization with TEM and SIMS led to validation of models of nitrogen as interstitial traps and strain-induced gettering. Electrical measurement of the PMOS threshold voltage shows a consistent trend of the nitrogen effects on boron redistribution in the S/D regions.

Effect of boron on gate oxide degradation and reliability in PMOS devices

Abstract Modern CMOS technology widely utilizes dual poly gate technology to create surface channel PMOS devices with low threshold voltage. The paper presents analysis of degradation and gate oxide reliability in 50 A oxide p+-poly PMOS transistors. The post boron implant anneal temperature is used to vary amount of boron penetration into the oxide. Results indicate significant role of boron in reduction of the gate oxide lifetime of PMOS devices and enhanced electron trapping in the oxide. The degradation correlates with the threshold voltage variation due to channel doping change. No effect of the boron penetration on stress-induced leakage current was observed. The results are discussed in terms of boron-related oxide defects and deteriorated interface of boron-doped polysilicon.

Research and development for seamless mobility

Motorola has recently embarked on a corporate vision of Seamless Mobility. Briefly, Seamless Mobility refers to when a user experiences connectivity to anything, anywhere, and anytime. It is uninterrupted easy access to information, entertainment, communication, monitor and control. The elements of Seamless Mobility vision and the implications to the research and development will be reviewed. The role of R&D to successfully deliver a set of solutions for Seamless Mobility will be addressed.

Boron penetration effect on gate oxide reliability of 50 Å PMOS devices

Abstract Modern CMOS technology widely utilizes dual poly gate technology to create surface channel PMOS devices with a low threshold voltage. This article presents the analysis of degradation and gate oxide reliability in 50 A oxide p + -poly PMOS transistors. The post-boron implant anneal temperature is used to vary the amount of boron penetration into the oxide. Results indicate the significant role of boron in the reduction of the gate oxide lifetime of PMOS devices and enhanced electron trapping in the oxide. This degradation correlates with the threshold voltage variation due to channel doping change. The stress-induced leakage current does not seem to be affected by the boron penetration effect.