Michael Switkes

Resolution enhancement of 157 nm lithography by liquid immersion

We present the results of a preliminary feasibility study of liquid immersion lithography at 157 nm. A key enabler has been the identification of a class of commercially available liquids, perfluoropolyethers, with low 157 nm absorbance α157 ∼ 10 cm−1 base 10. With 157 nm index of refraction around 1.36, these liquids could enable lithography at numerical aperture ∼1.25 and thus resolution of 50 nm for k1 = 0.4. We have also performed preliminary studies on the optical, chemical, and physical suitability of these liquids for use in high throughput lithography. We also note that at longer wavelengths, there is a wider selection of transparent immersion liquids. At 193 nm, the most transparent liquid measured, de-ionized water, has α193 = 0.036 cm−1 base 10. Water immersion lithography at 193 nm would enable resolution of 60 nm with k1 = 0.4.

Rapid cryofixation/freeze fracture for the study of nanobubbles at solid–liquid interfaces

A technique borrowed from biology, rapid cryofixation/freeze fracture, has been adapted for the study of liquid–solid interfaces. This technique allows high-resolution imaging of the interfaces between water and substrates with varying degrees of hydrophobicity. The interface between gas-saturated water and hydrophobic surfaces is covered with a network of 100 nm scale features similar to those previously reported, while degassed water produces smooth interfaces. We thus confirm that the features are indeed nanobubbles which form spontaneously from dissolved gas in the liquid. The interface of gas-saturated water and a hydrophilic surface, while showing no evidence of nanobubbles, is not as smooth as the degassed interface.

Immersion liquids for lithography in the deep ultraviolet

The requirements of liquids for use in immersion lithography are discussed. We present simple calculations of the transmission and index homogeneity requirements of the immersion liquid (T > 0.95 and δn < 5×10-7 respectively for sin θ = NA/n = 0.9 and a working distance of 1 mm) along with the temperature and pressure control requirements which follow from them. Water is the leading candidate immersion liquid for use at 193 nm, and we present data on its chemical compatibility with existing 193 nm resists through dissolution/swelling and surface energy studies. We find that it has a minimal impact on at least some current 193 nm resists. At 157 nm, suitably transparent immersion fluids remain to be identified. Perfluorinated polyethers (PFPE) are among the most transparent organics measured. The lowest PFPE absorbance at 157 nm can be further reduced by roughly a factor of two, from 6 to 3 cm-1 through removal of dis-solved oxygen. We also discuss our efforts to understand the origin of the remaining absorbance through supercritical CO2 fractionation.

Transparent fluids for 157-nm immersion lithography

More than 50 fluorocarbon liquids are measured for transpar- ency over the wavelength range 150 to 200 nm for the purpose of iden- tifying a suitably transparent fluid for use in 157-nm liquid immersion lithography. Purification methods such as degasification, distillation, silica gel drying, and supercritical fluid fractionation are investigated to determine the impact of residual contaminants on absorbance. The pu- rification processes are monitored by gas chromatography-mass spec- trometry and Fourier-tranform infrared spectroscopy (for organics), 19 F-nuclear magnetic resonance spectroscopy (for molecular structure), gel permeation chromatography (for molecular weight), Karl Fisher analysis (for water), and for residual dissolved oxygen. We find that in most cases, the absorbance is dominated by dissolved oxygen and water. Once the contaminant levels are reduced, the most transpar- ent perfluoroether (PFE) measured is perfluoro-1,2-bis(2-

Patterning of sub-50 nm dense features with space-invariant 157 nm interference lithography

We have implemented a space-invariant interference lithography tool for 157 nm F2 lasers, capable of creating dense line and space patterns with a spatial period of 91 nm. No gratings or curved optics are required, allowing a simple and inexpensive tool for resist and process development at 157 nm. Initial patterning of several commercial and experimental resists has resulted in high contrast features with little line edge roughness and good cross-sectional profiles, indicating that the fundamental performance of acid-catalyzed resists patterned at 157 nm may meet lithography requirements for sub-50 nm features.

Resolution enhancement of 157-nm lithography by liquid immersion

We present the results of a preliminary feasibility study of liquid immersion lithography at 157 nm. A key enabler has been the identification of a class of commercially available liquids, perfluoropolyethers, with low 157 nm absorbance α157~10 cm-1 base10. With 157 nm index of refraction around 1.36, these liquids could enable lithography at NA~1.25 and thus resolution of 50 nm for k1=0.4. We have also performed preliminary studies on the optical, chemical, and physical suitability of these liquids for use in high throughput lithography. We also note that at longer wavelengths, there is a wider selection of transparent immersion liquids. At 193 nm, the most transparent liquid measured, deionized water, has α193 = 0.036 cm-1 base 10. Water immersion lithography at 193 nm would enable resolution of 60 nm with k1=0.4.

Microfluidic simulations for immersion lithography

The premise behind immersion lithography is to improve resolution by increasing the index of refraction in the space between the final projection lens of an exposure system and the device wafer by inserting a high-index liquid in place of the low-index air that currently fills the gap. We present a preliminary analysis of the fluid flow characteristics of a liquid between the lens and the wafer. The objectives of this feasibility study are to identify liquid candidates that meet the fluid mechanical requirements and to verify modeling tools for immersion lithography. The filling process was analyzed to simplify the problem and identify important fluid properties and system parameters. Two-dimensional computational fluid dynamics (CFD) models of the fluid between the lens and the wafer are developed and used to investigate a passive technique for filling this gap, in which a liquid is dispensed onto the wafer as a puddle, and then the wafer and liquid move under the lens. Numerical simulations include a parametric study of the key dimensionless groups influencing the filling process, and an investigation of the effects of the fluid/wafer and fluid/lens contact angles and wafer direction. The model results are compared with experimental measurements.

Simulation study of process latitude for liquid immersion lithography

A simulation package has been developed for predicting the influence of immersion, i.e. the presence of a uniform liquid layer between the last objective lens and the photoresist, on optical projection lithography. This technology has engendered considerable interest in the microlithography community during the past year, as it enables the real part of the index of refraction in the image space, and thus the numerical aperture of the projection system, to be greater than unity. The simulation program described here involves a Maxwell vector solution approach, including polarization effects and arbitrary thin film multilayers. We examine here the improvement in process window afforded by immersion under a variety of conditions, including λ = 193 nm and 157 nm, annular illumination, and the use of alternating phase shift mask technology. Immersion allows printing of dense lines and spaces as small as 45 nm with acceptable process window. We also examine the effect of variations in liquid index on the process window and conclude that the index of the liquid must be known to and maintained within a few parts-per-million. This has important implications for the temperature control required in future liquid immersion projection systems.

Preliminary microfluidic simulations for immersion lithography

The premise behind immersion lithography is to improve the resolution for optical lithography technology by increasing the index of refraction in the space between the final projection lens of an exposure system and the device wafer. This is accomplished through the insertion of a high index liquid in place of the low index air that currently fills the gap. The fluid management system must reliably fill the lens-wafer gap with liquid, maintain the fill under the lens throughout the entire wafer exposure process, and ensure that no bubbles are entrained during filling or scanning. This paper presents a preliminary analysis of the fluid flow characteristics of a liquid between the lens and the wafer in immersion lithography. The objective of this feasibility study was to identify liquid candidates that meet both optical and specific fluid mechanical requirements. The mechanics of the filling process was analyzed to simplify the problem and identify those fluid properties and system parameters that affect the process. Two-dimensional computational fluid dynamics (CFD) models of the fluid between the lens and the wafer were developed for simulating the process. The CFD simulations were used to investigate two methods of liquid deposition. In the first, a liquid is dispensed onto the wafer as a “puddle” and then the wafer and liquid move under the lens. This is referred to as passive filling. The second method involves the use of liquid jets in close proximity to the edge of the lens and is referred to as active filling. Numerical simulations of passive filling included a parametric study of the key dimensionless group influencing the filling process and an investigation of the effects of the fluid/wafer and fluid/lens contact angles and wafer direction. The model results are compared with experimental measurements. For active filling, preliminary simulation results characterized the influence of the jets on fluid flow.

Long-term 193-nm laser irradiation of thin-film-coated CaF2 in the presence of H2O

The final projection lens element in a 193-nm immersion-based lithographic tool will be in direct contact with water during irradiation. Thus, any lifetime considerations for the lens must include durability data of lens materials and thin films in a water ambient. We have previously shown that uncoated CaF2 is attacked by water in a matter of hours, as manifested by a substantial increase in AFM-measured surface roughness.1 Thus, CaF2 lenses must be protected, possibly by a thin film, and the coatings tested for laser durability in water. To address the above lifetime concerns, we have constructed a marathon laser-irradiation system for testing thin film exposure to water under long-term laser irradiation. Coated substrates are loaded into a custom water cell, made of stainless steel and Teflon parts. Ultrapure water is delivered from a water treatment testbed that includes particle filtration, deionization and degassing stages. In-situ metrology includes 193-nm laser ratiometry, UV spectrophotometry and spectroscopic ellipsometry, all with spatial profiling capabilities. In-situ results are coupled with off-line microscopy, AFM measurements and spatial surface mapping with spectroscopic ellipsometry at multiple incidence angles. A variety of laser-induced changes have been observed, from complete adhesion loss of protective coatings to more subtle changes, such as laser-induced index changes of the thin films or surface roughening. Implications of the study on expected lifetimes of the protective coatings in the system will be discussed.