Mihai Brezeanu

Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis

High-quality electronic-grade intrinsic chemical- vapor-deposited (CVD) single-crystal diamond layers having exceptionally high carrier mobilities have been reported by Isberg et al. This makes the realization of novel electronic devices in diamond, particularly for high-voltage and high-temperature applications, a viable proposition. As such, material models which can capture the particular features of diamond as a semiconductor are required to analyze, optimize, and quantitatively design new devices. For example, the incomplete ionization of boron in diamond and the transition to metallic conduction in heavily boron-doped layers require accurate carrier freeze-out models to be included in the simulation of diamond devices. Models describing these phenomena are proposed in this paper and include numerical approximation of intrinsic diamond which is necessary to formulate doping- and temperature-dependent mobility models. They enable a concise numerical description of single-crystal diamond which agrees with data obtained from material characterization. The models are verified by application to new Schottky m-i-p+ diode structures in diamond. Simulated forward characteristics show excellent correlation with experimental measurements. In spite of the lack of impact ionization data for single-crystal diamond, approximation of avalanche coefficient parameters from other wide-bandgap semiconductors has also enabled the reverse blocking characteristics of diamond diodes to be simulated. Acceptable agreement with breakdown voltage from experimental devices made with presently available single-crystal CVD diamond is obtained.

Termination Structures for Diamond Schottky Barrier Diodes

A comprehensive study on the off-state performance of synthetic single crystal (SSC) diamond Schottky barrier diodes (SBDs) is the subject of this paper. Three termination structures suitable for unipolar diamond power devices are numerically investigated. Comparisons between the three terminations, based on blocking performance and area consumption are presented. Optimum design parameters derived from simulations are included for each structure. Experimental results of reverse-biased diamond SBDs for the first time with ramp angle termination are also presented

Surface acoustic wave CO 2 sensing with polymer-amino carbon nanotube composites

The synthesis of two new types of nanocomposite matrices, the first based on polyallylamine (PAA) and aminocarbon nanotubes, the second on polyethyleneimine (PEI) and aminocarbon nanotubes, are reported. The surface acoustic wave (SAW) sensors, coated with the two selected nanocomposites, showed good sensitivities when varying the CO2 concentrations in the range (500-5000) ppm. The sensor sensitivity is larger when using polyethyleneimine aminocarbon nanotubes than in the case when only a pure polyethyleneimine layer is considered for coating.

SOI sensing technologies for harsh environment

This paper reviews and addresses certain aspects of Silicon-On-Insulator (SOI) technologies for a harsh environment. The paper first describes the need for specialized sensors in applications such as (i) domestic and other small-scale boilers, (ii) CO2 Capture and Sequestration, (iii) oil & gas storage and transportation, and (iv) automotive. We describe in brief the advantages and special features of SOI technology for sensing applications requiring temperatures in excess of the typical bulk silicon junction temperatures of 150oC. Finally we present the concepts, structures and prototypes of simple and smart micro-hotplate and Infra Red (IR) based emitters for NDIR (Non Dispersive IR) gas sensors in harsh environments.

Single crystal diamond M-i-P diodes for power electronics

Its outstanding electronic properties and the recent advances in growing single-crystal chemically vapour-deposited substrates have made diamond a candidate for high-power applications. Diamond Schottky diodes have the potential of being an alternative to silicon p-i-n and SiC Schottky diodes in power electronic circuits. Extensive experimental and theoretical results, for both on- and off-state behaviour of metal-insulator-p-type diamond Schottky structures, are presented here. The temperature dependence of the forward characteristics and electrical performance of a termination structure suitable for unipolar diamond devices are also presented.

Numerical and Experimental Analysis of Single Crystal Diamond Schottky Barrier Diodes

We present our findings on the numerical and experimental analysis of diamond Schottky Barrier diodes (SBDs) comprising of intrinsic single crystal (SC) chemical vapour deposited (CVD) diamond layers grown on highly boron doped substrates also grown by CVD. Good correlation with experimental results has been achieved through numerical modelling that has incorporated previously reported data on transport physics and carrier activation. With our numerical model, we are able to match to within 12 to 15% of the measured forward characteristics of fabricated diamond SBDs up to 2 V in excess of the turn on voltage, for two different Schottky metals.

High performance SiC diodes based on an efficient planar termination

The paper addresses the state-of-art-in SiC power diodes. The best performance of Schottky barrier and junction barrier diodes on SiC is reviewed. The fundamental edge terminations used to relieve the crowding of the electric field of these devices are presented. An effective termination, based on the oxide ramp etching is described and the application of this method to SiC devices is discussed, achieving breakdown voltage of up to 95% from the ideally value.

Low Power Resistive Oxygen Sensor Based on Sonochemical SrTi0.6Fe0.4O2.8 (STFO40)

The current paper reports on a sonochemical synthesis method for manufacturing nanostructured (typical grain size of 50 nm) SrTi0.6Fe0.4O2.8 (Sono-STFO40) powder. This powder is characterized using X ray-diffraction (XRD), Mössbauer spectroscopy and Scanning Electron Microscopy (SEM), and results are compared with commercially available SrTi0.4Fe0.6O2.8 (STFO60) powder. In order to manufacture resistive oxygen sensors, both Sono-STFO40 and STFO60 are deposited, by dip-pen nanolithography (DPN) method, on an SOI (Silicon-on-Insulator) micro-hotplate, employing a tungsten heater embedded within a dielectric membrane. Oxygen detection tests are performed in both dry (RH = 0%) and humid (RH = 60%) nitrogen atmosphere, varying oxygen concentrations between 1% and 16% (v/v), at a constant heater temperature of 650 °C. The oxygen sensor, based on the Sono-STFO40 sensing layer, shows good sensitivity, low power consumption (80 mW), and short response time (25 s). These performance are comparable to those exhibited by state-of-the-art O2 sensors based on STFO60, thus proving Sono-STFO40 to be a material suitable for oxygen detection in harsh environments.

On-State Behaviour of Diamond M-i-P Structures

Diamond Schottky power diodes are currently subject to extensive research. In this paper, the on-state capability of this type of structures is assessed. Measured forward characteristics for different temperatures are included and the use of gold, nickel and aluminium as Schottky metal is evaluated. A theoretical study regarding the influence of different doping profiles at the drift-substrate interface on the electrical performance of the device is also inserted

Amino groups-based polymers for CO 2 detection; A comparison between two sensing mechanism models

Two CO2 sensing mechanisms, based on the Hard Soft Acids Bases (HSAB) and Bronsted-Lowry theories, are discussed and compared. They are evaluated by selecting amino groups-based coating layers, which are deposited on Surface Acoustic Wave (SAW) devices for CO2 detection. Experimentally measured CO2 sensitivities of different coating layers, such as polyallylamine (PAA), polyethyleneimine (PEI), nanocomposite matrix based on PAA-aminocarbon nanotubes and PEI-aminocarbon nanotubes, emeraldine, 4-sulfocalix[4]arene-doped polyaniline, matrix based emeraldine and carbonic anhydrase (PACA) are compared and evaluated according to their corresponding sensing mechanism.