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Dive into the research topics where Mihir Tendulkar is active.

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Featured researches published by Mihir Tendulkar.


Physical Review B | 2012

Hall conductivity dominated by fluctuations near the superconducting transition in disordered thin films

Nicholas Breznay; Karen Michaeli; K. S. Tikhonov; Alexander M. Finkel'stein; Mihir Tendulkar; A. Kapitulnik

We have studied the Hall effect in superconducting tantalum nitride films. We find a large contribution to the Hall conductivity near the superconducting transition, which we can track to temperatures well above


international conference on ic design and technology | 2008

Ultra-high bandwidth memory with 3D-stacked emerging memory cells

Keiko Abe; Mihir Tendulkar; John R. Jameson; Peter B. Griffin; Kumiko Nomura; Shinobu Fujita; Yoshio Nishi

{T}_{c}


Physical Review B | 2017

Superconductor to weak-insulator transitions in disordered tantalum nitride films

Nicholas Breznay; Mihir Tendulkar; Li Zhang; Sang Chul Lee; A. Kapitulnik

and magnetic fields well above the upper critical field


Nanotechnology | 2011

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3.

Blanka Magyari-Köpe; Mihir Tendulkar; Seong-Geon Park; Hyung Dong Lee; Yoshio Nishi

{\text{H}}_{c2}(0)


conference on lasers and electro optics | 2010

Quasi-passive and reconfigurable node for optical access network

She-Hwa Yen; Mihir Tendulkar; John R. Jameson; Shinji Yamashita; Yoshio Nishi; Olav Solgaard; Leonid G. Kazovsky

. This contribution arises from Aslamazov-Larkin superconducting fluctuations, and we find quantitative agreement between our data and recent theoretical analysis based on time-dependent Ginzburg-Landau theory.


conference on lasers and electro-optics | 2011

Quasi passive optical switch based on transition metal oxide device

She Hwa Yen; Yuruzu Takashima; Mihir Tendulkar; John R. Jameson; Yoshio Nishi; Leonid G. Kazovsky

To increase memory bandwidth with minimum area overhead, the new concept of 3D-stacked memory structure consisting of a small sense amplifier shared with a few 3D memory cells has been presented. The 16 bit 3D-stacked TiO2 memory chip was fabricated and demonstrated. The estimated bandwidth per unit area of 3D-stacked memory in sub-65 nm CMOS technology indicates that the 3D-stacked memory has potential to achieve ultra-high bandwidth required for the future processors.


Archive | 2011

Protonic motion in Pr0.7Ca0.3MnO3 thin films and its implications on resistance change properties

Mihir Tendulkar; Nicholas Breznay; Yoshio Nishi

We study the two-dimensional superconductor-insulator transition (SIT) in thin films of tantalum nitride. At zero magnetic field, films can be disorder-tuned across the SIT by adjusting thickness and film stoichiometry; insulating films exhibit classical hopping transport. Superconducting films exhibit a magnetic field-tuned SIT, whose insulating ground state at high field appears to be a quantum-corrected metal. Scaling behavior at the field-tuned SIT shows classical percolation critical exponents


Bulletin of the American Physical Society | 2011

Protonic motion in Pr

Mihir Tendulkar; Nicholas Breznay; Yoshio Nishi

z \nu \approx


Bulletin of the American Physical Society | 2011

_{0.7}

Nicholas Breznay; Mihir Tendulkar; A. Kapitulnik; Karen Michaeli; Alexander M. Finkel'stein

1.3, with a corresponding critical field


Bulletin of the American Physical Society | 2010

Ca

Nicholas Breznay; Mihir Tendulkar; A. Kapitulnik; Karen Michaeli; Alexander M. Finkel'stein

H_c \ll H_{c2}

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Nicholas Breznay

Lawrence Berkeley National Laboratory

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Karen Michaeli

Weizmann Institute of Science

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