Mihir Tendulkar
Stanford University
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Publication
Featured researches published by Mihir Tendulkar.
Physical Review B | 2012
Nicholas Breznay; Karen Michaeli; K. S. Tikhonov; Alexander M. Finkel'stein; Mihir Tendulkar; A. Kapitulnik
We have studied the Hall effect in superconducting tantalum nitride films. We find a large contribution to the Hall conductivity near the superconducting transition, which we can track to temperatures well above
international conference on ic design and technology | 2008
Keiko Abe; Mihir Tendulkar; John R. Jameson; Peter B. Griffin; Kumiko Nomura; Shinobu Fujita; Yoshio Nishi
{T}_{c}
Physical Review B | 2017
Nicholas Breznay; Mihir Tendulkar; Li Zhang; Sang Chul Lee; A. Kapitulnik
and magnetic fields well above the upper critical field
Nanotechnology | 2011
Blanka Magyari-Köpe; Mihir Tendulkar; Seong-Geon Park; Hyung Dong Lee; Yoshio Nishi
{\text{H}}_{c2}(0)
conference on lasers and electro optics | 2010
She-Hwa Yen; Mihir Tendulkar; John R. Jameson; Shinji Yamashita; Yoshio Nishi; Olav Solgaard; Leonid G. Kazovsky
. This contribution arises from Aslamazov-Larkin superconducting fluctuations, and we find quantitative agreement between our data and recent theoretical analysis based on time-dependent Ginzburg-Landau theory.
conference on lasers and electro-optics | 2011
She Hwa Yen; Yuruzu Takashima; Mihir Tendulkar; John R. Jameson; Yoshio Nishi; Leonid G. Kazovsky
To increase memory bandwidth with minimum area overhead, the new concept of 3D-stacked memory structure consisting of a small sense amplifier shared with a few 3D memory cells has been presented. The 16 bit 3D-stacked TiO2 memory chip was fabricated and demonstrated. The estimated bandwidth per unit area of 3D-stacked memory in sub-65 nm CMOS technology indicates that the 3D-stacked memory has potential to achieve ultra-high bandwidth required for the future processors.
Archive | 2011
Mihir Tendulkar; Nicholas Breznay; Yoshio Nishi
We study the two-dimensional superconductor-insulator transition (SIT) in thin films of tantalum nitride. At zero magnetic field, films can be disorder-tuned across the SIT by adjusting thickness and film stoichiometry; insulating films exhibit classical hopping transport. Superconducting films exhibit a magnetic field-tuned SIT, whose insulating ground state at high field appears to be a quantum-corrected metal. Scaling behavior at the field-tuned SIT shows classical percolation critical exponents
Bulletin of the American Physical Society | 2011
Mihir Tendulkar; Nicholas Breznay; Yoshio Nishi
z \nu \approx
Bulletin of the American Physical Society | 2011
Nicholas Breznay; Mihir Tendulkar; A. Kapitulnik; Karen Michaeli; Alexander M. Finkel'stein
1.3, with a corresponding critical field
Bulletin of the American Physical Society | 2010
Nicholas Breznay; Mihir Tendulkar; A. Kapitulnik; Karen Michaeli; Alexander M. Finkel'stein
H_c \ll H_{c2}