Miho Arai

Atomic Force Microscopy Based Tunable Local Anodic Oxidation of Graphene

We have fabricated graphene/graphene oxide/graphene (G/GO/G) junctions by local anodic oxidation lithography using atomic force microscopy (AFM). The conductance of the G/GO/G junction decreased with the bias voltage applied to the AFM cantilever V(tip). For G/GO/G junctions fabricated with large and small |V(tip)|. GO was semi-insulating and semiconducting, respectively. AFM-based LAO lithography can be used to locally oxidize graphene with various oxidation levels and achieve tunability from semiconducting to semi-insulating GO.

Boundary scattering in ballistic graphene.

We report magnetotransport measurements in ballistic graphene mesoscopic wires where the charge carrier mean free path is comparable to the wire width W. Magnetoresistance curves show characteristic peak structures where the peak field scales with the ratio of cyclotron radius R(c) and wire width W as W/R(c)=0.9±0.1, due to diffusive boundary scattering. The obtained proportionality constant between R(c) and W differs from that of a classical semiconductor two-dimensional electron system in which W/R(c)=0.55.

Supercurrent in van der Waals Josephson junction

Supercurrent flow between two superconductors with different order parameters, a phenomenon known as the Josephson effect, can be achieved by inserting a non-superconducting material between two superconductors to decouple their wavefunctions. These Josephson junctions have been employed in fields ranging from digital to quantum electronics, yet their functionality is limited by the interface quality and use of non-superconducting material. Here we show that by exfoliating a layered dichalcogenide (NbSe2) superconductor, the van der Waals (vdW) contact between the cleaved surfaces can instead be used to construct a Josephson junction. This is made possible by recent advances in vdW heterostructure technology, with an atomically flat vdW interface free of oxidation and inter-diffusion achieved by eliminating all heat treatment during junction preparation. Here we demonstrate that this artificially created vdW interface provides sufficient decoupling of the wavefunctions of the two NbSe2 crystals, with the vdW Josephson junction exhibiting a high supercurrent transparency.

Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide

We investigate the micromechanical exfoliation and van der Waals (vdW) assembly of ferromagnetic layered dichalcogenide Fe0.25TaS2. The vdW interlayer coupling at the Fe-intercalated plane of Fe0.25TaS2 allows exfoliation of flakes. A vdW junction between the cleaved crystal surfaces is constructed by dry transfer method. We observe tunnel magnetoresistance in the resulting junction under an external magnetic field applied perpendicular to the plane, demonstrating spin-polarized tunneling between the ferromagnetic layered material and the vdW junction.

Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2

Ferromagnetic van der Waals (vdW) materials are in demand for spintronic devices with all-two-dimensional-materials heterostructures. Here, we demonstrate mechanical exfoliation of magnetic-atom-intercalated transition metal dichalcogenide Cr1/3TaS2 from its bulk crystal; previously such intercalated materials were thought difficult to exfoliate. Magnetotransport in exfoliated tens-of-nanometres-thick flakes revealed ferromagnetic ordering below its Curie temperature T C ~ 110 K as well as strong in-plane magnetic anisotropy; these are identical to its bulk properties. Further, van der Waals heterostructure assembly of Cr1/3TaS2 with another intercalated ferromagnet Fe1/4TaS2 is demonstrated using a dry-transfer method. The fabricated heterojunction composed of Cr1/3TaS2 and Fe1/4TaS2 with a native Ta2O5 oxide tunnel barrier in between exhibits tunnel magnetoresistance (TMR), revealing possible spin injection and detection with these exfoliatable ferromagnetic materials through the vdW junction.

Fabrication of 10-nm-scale nanoconstrictions in graphene using atomic force microscopy-based local anodic oxidation lithography

We performed local anodic oxidation (LAO) lithography on monolayer graphene and highly oriented pyrolytic graphite (HOPG) using atomic force microscope (AFM). Auger electron spectroscopic measurements in the oxidized area formed on the HOPG revealed that the number of oxygen atoms systematically increased with the bias voltage applied to the AFM cantilever |Vtip|, which demonstrates the tunability of the extent of oxidation with |Vtip|. By optimizing the LAO conditions, we fabricated monolayer graphene nanoconstrictions with a channel width as small as 10 nm, which is the smallest graphene nanoconstriction so far achieved by utilizing AFM lithography techniques.

Edge-Channel Transport of Dirac Fermions in Graphene Quantum Hall Junctions

Dirac fermions exhibit various characteristic transport phenomena in graphene. Particularly in high magnetic fields, the electronic states of Dirac fermions are quantized into Landau levels, and graphene shows a half-integer quantum Hall effect. Here, we discuss the edge-channel picture in graphene quantum Hall junctions and review experiments on the quantum Hall effect in graphene in-plane unipolar and bipolar junctions.

Mid-infrared photoresponse of graphene nanoribbon bolometer

We demonstrate mid-infrared (MIR) photodetection by using a graphene nanoribbon (GNR) bolometer. Graphene is patterned into a GNR structure to open the transport gap (TG). Within the TG, the GNR exhibits Coulomb oscillation (CO), and the conductance peak in the CO exhibits electron temperature dependence. MIR photoirradiation induces electron heating of the GNR and thus enables us to detect the MIR light through the conductance change of the GNR.

Single-electron switching effect in graphene parallel-coupled double quantum dots

We have fabricated parallel-coupled quantum dots on single-layer graphene. The tunnel coupling between the quantum dots can be tuned by a graphene in-plane gate. Owing to the tunnel coupling, the Coulomb blockade oscillation peaks exhibit periodic shifts as the number of electron in the non-conducting side-coupled QD is changed. The result suggests the observation of the single electron switching effect, which is a prerequisite for a single photon detection scheme using parallel-coupled quantum dots.

Photo-thermoelectric detection of cyclotron resonance in asymmetrically carrier-doped graphene two-terminal device

Graphene is known to show a significant photo-thermoelectric effect that can exceed its photovoltaic contribution. Here, by utilizing this effect, we demonstrate a photovoltage measurement of cyclotron resonance in a double-back-gated h-BN/graphene/h-BN two-terminal device. A graphite local bottom gate was fabricated in addition to a p-doped Si global back gate. By tuning the two gate voltages, an in-plane graphene junction having an asymmetric carrier-doping profile was created. With the help of this asymmetric structure, the photo-thermoelectric voltage generated in the vicinity of the metal-electrode/graphene junction was detected. At a low temperature and in the presence of a magnetic field, a photo-induced voltage was measured under the irradiation of an infrared laser (Wavelength= 9.28 to 10.61 micron). We observed a strong enhancement of the photovoltage signal under the cyclotron resonance condition, at which the energy of excitation coincides with a transition between Landau levels. These results highlight the possibility of using the photo-thermoelectric effect in graphene for THz photo-detection.