Ming-Han Lee

Ultra-thin ALD-MnN barrier for low resistance advanced interconnect technology

As dimension shrinks the volume percent occupied by conventional barrier and liner increases and line resistance (Rs) and via resistance (Rc) increases dramatically. An ultrathin ALD MnN barrier is being evaluated as a single layer barrier for resistance reduction in small structures. >20% and >80% Rs and Rc reduction was demonstrated, while 4× better mean time to failure (MTTF) on the time dependent dielectric breakdown (TDDB) was achieved comparing to conventional barrier/liner. ALD MnN is a potential barrier candidate for future interconnects technology.

Low-via-resistance and low-cost PVD-TiZrN barrier for Cu/low-K interconnects

In this work, a low-resistance and low-cost PVD-TiZrN barrier is evaluated for BEOL interconnect. Comparing to conventional PVD barrier, comparable Cu barrier and Cu wetting properties are obtained. Moreover, up to 55% of via resistance reduction is achieved, with comparable voltage breakdown performance comparing to conventional one.

A flexible top metal structure to improve ultra low-k reliability

High stresses generated from chip-package interactions (CPI), especially when large die is flip mounted on organic substrate using Pb-free C4 bumps, can easily cause low-k delamination. A novel scheme by applying an elastic material can effectively reduce the transmitted stresses and, thus, resolve the interfacial delamination issue. Along with an optimized chip-package integration solution, a reliable interconnect structure with good electrical performance, has been successfully demonstrated.

Uncured ELK as a chemical mechanical planarization stop layer in Cu/XLK interconnect

A novel approach of copper CMP stop layer using uncured extreme low-K was demonstrated to improve the within-wafer Rs uniformity on Cu/extra low-k (XLK) interconnect. This CMP stop layer could be converted into a low dielectric constant film by removing porogen with post CMP treatment, hence its impact on overalls film capacitance is minimized.