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Dive into the research topics where Mohammad Araghchini is active.

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Featured researches published by Mohammad Araghchini.


Optics Express | 2010

Design and global optimization of high-efficiency thermophotovoltaic systems

Peter Bermel; Michael Ghebrebrhan; Walker R. Chan; YiXiang Yeng; Mohammad Araghchini; Rafif E. Hamam; Christopher H. Marton; Klavs F. Jensen; Marin Soljacic; John D. Joannopoulos; Steven G. Johnson; Ivan Celanovic

Despite their great promise, small experimental thermophotovoltaic (TPV) systems at 1000 K generally exhibit extremely low power conversion efficiencies (approximately 1%), due to heat losses such as thermal emission of undesirable mid-wavelength infrared radiation. Photonic crystals (PhC) have the potential to strongly suppress such losses. However, PhC-based designs present a set of non-convex optimization problems requiring efficient objective function evaluation and global optimization algorithms. Both are applied to two example systems: improved micro-TPV generators and solar thermal TPV systems. Micro-TPV reactors experience up to a 27-fold increase in their efficiency and power output; solar thermal TPV systems see an even greater 45-fold increase in their efficiency (exceeding the Shockley-Quiesser limit for a single-junction photovoltaic cell).


IEEE Transactions on Power Electronics | 2013

A Technology Overview of the PowerChip Development Program

Mohammad Araghchini; Jun Chen; Vicky V. T. Doan-Nguyen; Daniel V. Harburg; Donghyun Jin; Jungkwun Kim; Min Shik Shin Soo Eun Kim; Seungbum Lim; Bin Lu; Daniel Piedra; Jizheng Qiu; John Ranson; Min Sun; Xuehong Yu; Hongseok Yun; Mark G. Allen; Jesús A. del Alamo; Gary J. Desgroseilliers; Florian Herrault; Jeffrey H. Lang; Christopher G. Levey; Christopher B. Murray; David M. Otten; Tomas Palacios; David J. Perreault; Charles R. Sullivan

The PowerChip research program is developing technologies to radically improve the size, integration, and performance of power electronics operating at up to grid-scale voltages (e.g., up to 200V) and low-to-moderate power levels (e.g., up to 50W) and demonstrating the technologies in a high-efficiency light-emitting diode driver, as an example application. This paper presents an overview of the program and of the progress toward meeting the program goals. Key program aspects and progress in advanced nitride power devices and device reliability, integrated high-frequency magnetics and magnetic materials, and high-frequency converter architectures are summarized.


Optics Express | 2010

Efficient planar fiber-to-chip coupler based on two-stage adiabatic evolution

Anatol Khilo; Miloš A. Popović; Mohammad Araghchini; Franz X. Kärtner

A new, efficient adiabatic in-plane fiber-to-chip coupler design is proposed. In this design, the light from the fiber is coupled into a low-index waveguide with matching mode size. The mode is first adiabatically reduced in size with a rib taper, and then transferred into a high-index (e.g. silicon) waveguide with an inverse taper. The two-stage design allows to reduce the coupler length multiple times in comparison with pure inverse taper-based couplers of similar efficiency. The magnitude of length reduction increases with the refractive index of the low-index waveguide and the fiber mode size.


Journal of Vacuum Science & Technology B | 2011

Fabrication of two-dimensional tungsten photonic crystals for high-temperature applications

Mohammad Araghchini; YiXiang Yeng; N. Jovanovic; Peter Bermel; Leslie A. Kolodziejski; Marin Soljacic; Ivan Celanovic; John D. Joannopoulos

This article details microfabrication of two-dimensional tungsten photonic crystals (2D W PhCs) for high-temperature applications such as selective thermal emitters for thermophotovoltaic energy conversion. In particular, interference lithography and reactive ion etching are used to produce large area single crystal tungsten 2D PhCs. For this investigation, we fabricated a 2D W PhC sample consisting of an array of cylindrical cavities with 800 nm diameter, 1.2 μm depth, and 1.2 μm period. Extensive characterization and calibration of all microfabrication steps are presented. Experimentally obtained thermal emissivity spectrum is shown to match well with numerical simulations.This article details microfabrication of two-dimensional tungsten photonic crystals (2D W PhCs) for high-temperature applications such as selective thermal emitters for thermophotovoltaic energy conversion. In particular, interference lithography and reactive ion etching are used to produce large area single crystal tungsten 2D PhCs. For this investigation, we fabricated a 2D W PhC sample consisting of an array of cylindrical cavities with 800 nm diameter, 1.2 μm depth, and 1.2 μm period. Extensive characterization and calibration of all microfabrication steps are presented. Experimentally obtained thermal emissivity spectrum is shown to match well with numerical simulations.


Proceedings of SPIE - The International Society for Optical Engineering | 2008

Photonic Analog-to-Digital Conversion with Electronic-Photonic Integrated Circuits

Franz X. Kärtner; Reja Amatya; Mohammad Araghchini; Jonathan R. Birge; Hyunil Byun; Jian Chen; Marcus S. Dahlem; Nicole DiLello; F. Gan; Charles W. Holzwarth; Judy L. Hoyt; Erich P. Ippen; Anatol Khilo; Jungwon Kim; M. Kim; Ali R. Motamedi; Jason S. Orcutt; M. Park; Michael H. Perrott; Miloš A. Popović; R. J. Ram; Henry I. Smith; Gui-Rong Zhou; Steven J. Spector; Theodore M. Lyszczarz; M. W. Geis; Donna M. Lennon; J. U. Yoon; Matthew E. Grein; Robert T. Schulein

Photonic Analog-to-Digital Conversion (ADC) has a long history. The premise is that the superior noise performance of femtosecond lasers working at optical frequencies enables us to overcome the bottleneck set by jitter and bandwidth of electronic systems and components. We discuss and demonstrate strategies and devices that enable the implementation of photonic ADC systems with emerging electronic-photonic integrated circuits based on silicon photonics. Devices include 2-GHz repetition rate low noise femtosecond fiber lasers, Si-Modulators with up to 20 GHz modulation speed, 20 channel SiN-filter banks, and Ge-photodetectors. Results towards a 40GSa/sec sampling system with 8bits resolution are presented.


Proceedings of SPIE, the International Society for Optical Engineering | 2009

High Speed Analog-to-Digital Conversion with Silicon Photonics

Charles W. Holzwarth; Reja Amatya; Mohammad Araghchini; Jonathan R. Birge; Hyunil Byun; Jian Chen; Marcus S. Dahlem; F. Gan; Judy L. Hoyt; Erich P. Ippen; Franz X. Kärtner; Anatol Khilo; Jungwon Kim; M. Kim; Ali R. Motamedi; Jason S. Orcutt; M. Park; Michael H. Perrott; Miloš A. Popović; R. J. Ram; Henry I. Smith; Gui-Rong Zhou; Steven J. Spector; Theodore M. Lyszczarz; M. W. Geis; Donna M. Lennon; J. U. Yoon; Matthew E. Grein; Robert T. Schulein; Sergey Frolov

Sampling rates of high-performance electronic analog-to-digital converters (ADC) are fundamentally limited by the timing jitter of the electronic clock. This limit is overcome in photonic ADCs by taking advantage of the ultra-low timing jitter of femtosecond lasers. We have developed designs and strategies for a photonic ADC that is capable of 40 GSa/s at a resolution of 8 bits. This system requires a femtosecond laser with a repetition rate of 2 GHz and timing jitter less than 20 fs. In addition to a femtosecond laser this system calls for the integration of a number of photonic components including: a broadband modulator, optical filter banks, and photodetectors. Using silicon-on-insulator (SOI) as the platform we have fabricated these individual components. The silicon optical modulator is based on a Mach-Zehnder interferometer architecture and achieves a VπL of 2 Vcm. The filter banks comprise 40 second-order microring-resonator filters with a channel spacing of 80 GHz. For the photodetectors we are exploring ion-bombarded silicon waveguide detectors and germanium films epitaxially grown on silicon utilizing a process that minimizes the defect density.


Optics Express | 2006

Carrier-envelope phase control by a composite plate

R. Ell; Jonathan R. Birge; Mohammad Araghchini; Franz X. Kärtner

We demonstrate a new concept to vary the carrier-envelope phase of a mode-locked laser by a composite plate while keeping all other pulse parameters practically unaltered. The effect is verified externally in an interferometric autocorrelator, as well as inside the cavity of an octave-spanning femtosecond oscillator. The carrier-envelope frequency can be shifted by half the repetition rate with negligible impact on pulse spectrum and energy.


european conference on cognitive ergonomics | 2012

Modeling and measured verification of stored energy and loss in MEMS toroidal inductors

Mohammad Araghchini; Jeffrey H. Lang; Xuehong Yu; Minsoo Kim; Florian Herrault; Mark G. Allen; Jizheng Qiu; Charles R. Sullivan

This paper presents the derivation and verification of a sinusoidal steady-state equivalent-circuit model for microfabricated inductors developed for use in integrated power electronics. These inductors have a low profile, a toroidal air core, and a single-layer winding fabricated via high-aspect-ratio molding and electroplating. Such inductors inevitably have a significant gap between winding turns. This makes the equivalent resistance more difficult to model. The low profile increases the significance of the energy that is stored in the winding, which together with the winding gap makes the equivalent inductance more difficult to model. The models presented here account for these effects. Finally, the models are verified against results from 2-D and 3-D finite-element analysis (2-D FEA and 3-D FEA) direct measurement, and from in-circuit experimentation. In all cases, the equivalent-circuit model is observed to be accurate to within several percentage.


workshop on control and modeling for power electronics | 2014

A systematic approach to modeling impedances and current distribution in planar magnetics

Minjie Chen; Mohammad Araghchini; Khurram K. Afridi; Jeffrey H. Lang; Charles R. Sullivan; David J. Perreault

Planar magnetic components using printed-circuit-board windings are attractive due to their high repeatability, good thermal performance and usefulness for realizing intricate winding patterns. To enable higher system integration at high switching frequency, more sophisticated methods that can rapidly and accurately model planar magnetics are needed. This paper develops a lumped circuit model that captures the impact of skin and proximity effects on current distribution and electromagnetic fields in planar magnetics. This enables accurate predictions of impedances, losses, stored reactive energy and current sharing among parallel windings. This lumped model is also a circuit domain representation of electromagnetic interactions. It can be used to simulate circuits incorporating planar magnetics, to visualize the electromagnetic fields, and to extract parameters for magnetic models by simulations. The modeling results match with previous theories and finite-element-modeling results. A group of planar magnetic devices, including transformers and inductors with various winding patterns, are prototyped and measured to validate the proposed approach.


ieee soi 3d subthreshold microelectronics technology unified conference | 2015

Extending the bandwidth of Piezo-Electric energy harvesting through the use of Bias Flip

Sheng Zhao; Arun Paidimarri; Nathan Ickes; Mohammad Araghchini; Jeff Lang; Jianguo Ma; Yogesh K. Ramadass; Dennis Buss

In this paper, we report three new results. 1) We show simulations of max output power from a Piezo-Electric (PZ) Energy Harvesting Device (EHD) as a function of frequency and Bias Flip (BF) efficiency. These simulations show that BF with 95% efficiency improves the 3dB BW by 4x. They also show that, at frequencies 30% above resonance (150 Hz) or below resonance (80 Hz), 95% BF efficiency improves output power by >15x (13.6 dB) compared to the case of no BF. 2) We experimentally demonstrate that 95% BF can be achieved on non-Piezo-Electric (non-PZ) capacitors. 3) We show that BF efficiency on PZ capacitors is lower than for non-PZ capacitors, and we relate this to the series resistance of the EHD at the BF frequency.

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Jeffrey H. Lang

Massachusetts Institute of Technology

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Florian Herrault

Georgia Institute of Technology

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Franz X. Kärtner

Massachusetts Institute of Technology

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John D. Joannopoulos

Massachusetts Institute of Technology

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Jonathan R. Birge

Massachusetts Institute of Technology

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Xuehong Yu

Georgia Institute of Technology

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Anatol Khilo

Masdar Institute of Science and Technology

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Ali R. Motamedi

Massachusetts Institute of Technology

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