Mohammad Farazian

A Dual-Band CMOS CDMA Transmitter Without External SAW Filtering

A SAW-less dual-band I/Q transmitter without a driver amplifier is designed for dual-band (personal communication system (PCS)/International Mobile Telecommunications (IMT) and cellular) code division multiple access applications. The receive band noise is less than -159 dBc/Hz. It can provide up to + 5-dBm output power and meets the adjacent channel power ratio and dynamic range requirements of both PCS/IMT and cellular CDMA. The measured S 22 is better than -10 dB for both bands and it requires no external matching components. The transmitter is implemented in a 65-nm digital CMOS technology and is packaged using flip-chip technology. The transmitter signal path (RF portion) occupies 1.0 mm2.

A dual-band CMOS CDMA transmitter without SAW and Driver Amplifier

A SAW-less dual-band I/Q transmitter without a Driver Amplifier (DA) is designed for dual-band (PCS/IMT, cellular) CDMA applications. The receive band noise is better than −159 dBc/Hz. It can provide up to +5 dBm output power and meets the ACPR and dynamic range requirements of both PCS/IMT and cellular CDMA. The measured S22 is better than −10 dB for both bands and it requires no external matching components. The transmitter is implemented in a 65nm digital CMOS technology, and is packaged using flip-chip technology. The transmitter signal path (RF portion) occupies 1.0 mm2.

A CMOS Multi-Phase Injection-Locked Frequency Divider for V-Band Operation

An inductor-less injection-locked frequency divider for high-speed frequency synthesis at V-band is presented. It achieves division by six and operates up to 65 GHz. In addition, it can achieve division ratios of four and two when 44 GHz or 22 GHz input signals are applied, respectively. Implemented in a 0.13 mum digital CMOS technology, the divider draws an average current of 18 mA, and the core area is 0.026 mm2 .

Fast hopping carrier generation for 14-band multi-band OFDM UWB in digital CMOS

A 14-band frequency synthesizer for MB-OFDM UWB using an inductor-less design methodology is presented. It is capable of frequency switching across the entire UWB band in approximately 2 nS, and the phase noise is less than −114 dBc/Hz at 1 MHz offset. Implemented in a 0.13µm CMOS technology, the synthesizer dissipates 135 mW from a 1.2 V supply, and occupies only 1.3 mm2 of silicon area.

Stability and Operation of Injection-Locked Regenerative Frequency Dividers

Injection-locked regenerative frequency dividers can achieve a fractional division ratio similar to regenerative frequency dividers and can provide quadrature output phases. An analysis of the steady-state operation, stability, and phase noise of injection-locked regenerative frequency dividers is presented. In addition, two-stage ring oscillators (based on negative-resistance delay cells) are studied, and their steady-state free-running operation and injection-locked behavior are investigated. Simulation results based on the equations derived in this paper are compared with circuit simulations to examine the accuracy of our analysis, which is quantified in different parts of this paper.

Architectures for Frequency Synthesizers

This chapter starts with an overview of the conventional frequency synthesis techniques as well as the hybrid architectures that can be used to implement a fast settle frequency synthesizer. This is followed by a proposed architecture for an inductor-less fourteen- band CMOS frequency synthesizer for MB-OFDM UWB applications.

An Inductor-Less CMOS 14-Band Frequency Synthesizer for UWB

As mentioned in Chap. 1 one of the challenges in implementing a frequency synthesizer for Multi-band OFDM (MB-OFDM) UWB standard is overcoming the agility limitations of conventional synthesizers.