Moon-Sook Park
Samsung
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Featured researches published by Moon-Sook Park.
international solid-state circuits conference | 2006
Kyu-hyoun Kim; Uk-Song Kang; Hoe-ju Chung; Duk-ha Park; Woo-seop Kim; Young-Chan Jang; Moon-Sook Park; Hoon Lee; Jin-Young Kim; Jung Sunwoo; Hwan-Wook Park; Hyun-Kyung Kim; Su-Jin Chung; Jae-Kwan Kim; Hyung-seuk Kim; Kee-Won Kwon; Young-Taek Lee; Joo Sun Choi; Chang-Hyun Kim
This paper proposes a deca-data rate clocking scheme and relevant I/O circuit techniques for a multi-Gb/s/pin memory interface. A deca-data rate scheme transmits 10 bits in one external clock cycle to transfer an error control code along with original data seamlessly without a timing bubble. A 288 Mb SDRAM has been designed using the proposed scheme combined with fast cycling core techniques to have both high I/O bandwidth and fast random cycling. Measured results show that the chip exhibits per-pin data rate of 8 Gb/s and row cycle time of 9.6 ns
asian solid state circuits conference | 2009
Young-Chan Jang; Hoe-ju Chung; Young-don Choi; Hwan-Wook Park; Jae-Kwan Kim; Soouk Lim; Jung Sunwoo; Moon-Sook Park; Hyung-seuk Kim; Sang-yun Kim; Yun-Sang Lee; Woo-seop Kim; Jung-Bae Lee; Jei-Hwan Yoo; Chang-Hyun Kim
A 1-Gbit DRAM with 5.8-Gb/s/pin unidirectional differential I/Os was implemented by 70 nm DRAM process and a main memory module with dual in-line memory module was assembled. The implemented DRAM chips have control methods for core noise injection and a cyclic redundancy check (CRC) generator for outer-data inner-command architecture. Measurements for bit error rate and jitter performance of the transmitter was performed on an electrical test board which emulates the real memory systems environment. Also, the effect on power noise was analyzed from the DRAM chips with three class values of power decoupling capacitance for the peripheral part. The results show that no additional coding for the differential I/O protection in DRAM, like CRC, is required up to 5.8-Gb/s/pin operation.
asian solid state circuits conference | 2008
Hoe-ju Chung; Young-Chan Jang; Young-don Choi; Hwan-Wook Park; Jae-Kwan Kim; Soouk Lim; Jung Sunwoo; Moon-Sook Park; Hyungwsuk Kim; Sang-yun Kim; Hyun-Kyung Kim; Su-Jin Chung; Eun-Mi Lee; Young-Ju Kim; Yun-Sang Lee; Woo-seop Kim; Jung-Bae Lee; Chang-Hyun Kim
A 5.8 Gb/s/pin DRAM with unidirectional differential I/Os and 1 Gbit memory core was designed and 23.2 GB/s memory module was assembled. Tx BER measurement on an electrical test board similar to real memory sub-systempsilas environment was performed and the results show that no additional coding for the differential I/O protection, like CRC, seems to be required up to 5.8 Gb/s/pin operation. Also, an efficient timing usage method using matched path for a possible implementation of CRC computation in ODIC architecture was proposed.
Archive | 2006
Moon-Sook Park; Kyu-hyoun Kim
Archive | 2006
Moon-Sook Park; Kyu-hyoun Kim
Archive | 2006
Moon-Sook Park; Kyu-hyoun Kim
Archive | 2008
Moon-Sook Park; Hoe-ju Chung; Jung-Bae Lee
Archive | 2008
Moon-Sook Park; Young-don Choi
Archive | 2007
Moon-Sook Park; Kyu-hyoun Kim
Archive | 2010
Moon-Sook Park; Kyu-hyoun Kim