Moosung M. Chae
GlobalFoundries
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Publication
Featured researches published by Moosung M. Chae.
international electron devices meeting | 2015
Takeshi Nogami; Benjamin D. Briggs; Sevim Korkmaz; Moosung M. Chae; Christopher J. Penny; Juntao Li; Wei Wang; Paul S. McLaughlin; Terence Kane; Christopher Parks; Anita Madan; S. Cohen; Thomas M. Shaw; Deepika Priyadarshini; Hosadurga Shobha; Son Van Nguyen; Raghuveer Patlolla; James Kelly; Xunyuan Zhang; Terry A. Spooner; Donald F. Canaperi; Theodorus E. Standaert; Elbert E. Huang; Vamsi Paruchuri; Daniel C. Edelstein
Through-Co self-forming-barrier (tCoSFB) metallization scheme is introduced, with Cu gap-fill capability down to 7 nm-node dimensions. Mn atoms from doped-seedlayer diffuse through CVD-Co wetting layer, to form TaMnxOy barrier, with integrity proven by vertical-trench triangular-voltage-sweep and barrier-oxidation tests. tCoSFB scheme enables 32% and 45% lower line and via resistance, respectively at 10 nm node dimensions, while achieving superior EM performance to competitive TaN/Co and TaN/Ru-based barriers.
Archive | 2016
Moosung M. Chae; Larry Zhao
Archive | 2013
Xunyuan Zhang; Moosung M. Chae; Larry Zhao
Archive | 2013
Moosung M. Chae; Errol Todd Ryan; Nicholas V. LiCausi; Christian Witt; Ailian Zhao; Ming He; Sean X. Lin; Xunyuan Zhang; Kunaljeet Tanwar
Archive | 2014
Xunyuan Zhang; Hoon Kim; Moosung M. Chae
Archive | 2013
Errol Todd Ryan; Moosung M. Chae; Larry Zhao; Kunaljeet Tanwar; Nicholas V. LiCausi; Christian Witt; Ailian Zhao; Ming He; Sean X. Lin; Xunyuan Zhang
Archive | 2013
Nicholas V. LiCausi; Errol Todd Ryan; Ming He; Moosung M. Chae; Kunaljeet Tanwar; Larry Zhao; Christian Witt; Ailian Zhao; Sean X. Lin; Xunyuan Zhang
Archive | 2018
Xunyuan Zhang; Moosung M. Chae
Archive | 2015
Ki Young Lee; Moosung M. Chae; Woo Sik Kim
Archive | 2015
Moosung M. Chae
