Moriyoshi Haruyama

Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). They are formed in the SiC/SiO2 interface regions of wet-oxidation C-face 4H-SiC MOSFETs and were not found in other C-face and Si-face MOSFETs. Their bright room-temperature photoluminescence (PL) was observed in the range from 550 to 750 nm and revealed variable multi-peak structures as well as variable peak shifts. We characterized a wide variety of their PL spectra as the inevitable variation of local atomic structures at the interface. Their polarization dependence indicates that they are formed at the SiC side of the interface. We also demonstrate that it is possible to switch on/off the SPSs by a bias voltage of the MOSFET.

Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond

A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV−) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 ± 0.06 and 0.46 ± 0.03 have been obtained for single NV− centers formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NV− centers near the surface compared with the states obtained for alternatively terminated surfaces.

Evaluation of Radio-Photoluminescence Spectra of Copper-Doped Phosphate Glass Dosimeter Irradiated with Ionized Particles

A radio-photoluminescence (RPL) dosimeter with a copper-ion luminescent center was fabricated to evaluate its response in ionized particle detection. A focused proton microbeam with varying energies up to 3 MeV and heavy ions of 490 MeV osmium (Os) were employed along with X-rays to evaluate its performance in micrometer-scale radiation monitoring. The response to ionized particles was evaluated under focused proton beam irradiation where the peak wavelength differed from that obtained under X-ray irradiation. Two peaks were observed under Os irradiation where the secondary-generated particles and photons have a significant effect on the dosimeter. The results suggest that the fabricated RPL dosimeter with copper luminescence center could be used to estimate the irradiation effect of primary ionized particles separately from the effects of secondary particles, photons, and environmental background radiation.

Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs

We investigated single photon sources (SPSs) in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) by means of confocal microscope techniques. We found SPSs only in 4H-SiC/SiO2 interface regions of wet-oxide C-face MOSFETs. The other regions of MOSFETs such as source, drain and well did not exhibit SPSs. The luminescent intensity of the SPSs at room temperature was at least twice larger than that of the most famous SPSs, the nitrogen-vacancy center, in diamond. We examined four types of C-face and Si-face 4H-SiC MOSFETs with different oxidation processes, and found that the formation of the SPSs strongly depended on the preparation of SiC/SiO2 interfaces.

Enhancement of Optical Transmittance of Polymer-Dispersed Liquid Crystal Cells

Enhancement of optical transmittance of polymer-dispersed liquid crystal (PDLC) cells was investigated by introducing a modification into the substrates. Surface treatment by rubbing was performed on both network-type and droplet-type PDLCs to investigate the effect on the optical transmittance of the cells. Differences in the transmittance of the PDLC in the polymer matrix were observed by introducing rubbing effect on network-type PDLC but not on droplet-type PDLC. These phenomena might be used to distinguish the application field of both types of PDLC cells by enhancing optical transmittance and scattering properties.