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Dive into the research topics where Moshe Sarfaty is active.

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Featured researches published by Moshe Sarfaty.


Journal of Applied Physics | 1999

Langmuir probe in low temperature, magnetized plasmas: Theory and experimental verification

Bon-Woong Koo; Noah Hershkowitz; Moshe Sarfaty

Langmuir probe theory, adapted to magnetized, partially ionized, low temperature processing plasmas with radial diffusion dominated by electron-neutral collisions, was verified in electron cyclotron resonance (ECR) plasmas. Plasma parameters such as plasma potential, electron temperature, plasma density, and the ratio of electron saturation current to ion saturation current (Ie*/Ii*) were measured by single-sided planar probe in various ECR plasmas (H2, He, N2, O2, Ar, and CF4). The neutral pressure was varied between 0.5 and 8.5 mTorr and the microwave power between 170 and 1250 W with good matching conditions; the reflected power was kept at less than 3% of the input power. The measured ratios of Ie*/Ii*, and other plasma parameters were consistent with the probe theory for pressures greater than 2.0 mTorr for various plasmas of Ar, He, H2, and N2. These results indicate that the electron-neutral collisional probe theory works well for magnetized ECR plasmas (magnetic flux densities of 0.8–1.0 kG).


Applied Physics Letters | 2000

Temporal fluctuations: A fingerprint of surface chemical reactions

Moshe Sarfaty; Jed Davidow; Dimitris Lymberopoulos

A real-time fast Fourier transform of temporal fluctuations of optical emission and rf power signals captures surface chemical reactions. The observed fluctuations, previously considered as noise and traditionally time averaged, depend on process chemistry and surface materials. The coherent optical emission fluctuations are specific only to the etch by-products. Plausible explanations, such as plasma density or electron temperature modulations, plasma instabilities, rf coupling modulations, or external hardware effects are dismissed by the data. It has been confirmed that the observed frequency patterns are directly related to surface chemical reactions of the film exposed to the plasma. This finding can be used to diagnose, monitor, and control chemical surface reactions in real time.


Archive | 2001

Method and apparatus for monitoring a process by employing principal component analysis

Lalitha Balasubramhanya; Moshe Sarfaty; Jed Davidow; Dimitris Lymberopoulos


Archive | 2002

Film thickness control using spectral interferometry

Moshe Sarfaty; Lalitha Balasubramhanya; Jed Davidow; Dimitris Lymberopoulos


Archive | 2006

Integrated equipment set for forming a low K dielectric interconnect on a substrate

Judon Tony Pan; Michael D. Armacost; Hoiman Hung; Hongwen Li; Arulkumar Shanmugasundram; Moshe Sarfaty; Dimitris Lymberopoulos; Mehul Naik


Archive | 1999

Method and apparatus for monitoring the process state of a semiconductor device fabrication process

Jed Davidow; Moshe Sarfaty; Dimitris Lymberopoulos


Archive | 2001

In-situ film thickness measurement using spectral interference at grazing incidence

Andreas Goebel; Moshe Sarfaty; Sebastien Raoux


Archive | 2000

Method and apparatus employing optical emission spectroscopy to detect a fault in process conditions of a semiconductor processing system

Hakeem M. Oluseyi; Moshe Sarfaty


Archive | 2000

Monitoring of film characteristics during plasma-based semi-conductor processing using optical emission spectroscopy

Hakeem M. Oluseyi; Moshe Sarfaty


Archive | 2000

Situ measurement of film nitridation using optical emission spectroscopy

Moshe Sarfaty

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Hakeem M. Oluseyi

Florida Institute of Technology

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