Nam Kyun Park

SEMICONDUCTOR INTERGRATED CIRCUIT DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF DRIVING THE SAME

Semiconductor device having vertical channel, resistive memory device including the same, and method of manufacturing the same

PHASE CHANGE MEMORY DEVICE HAVING MULTIPLE METAL SILICIDE LAYERS AND METHOD OF MANUFACTURING THE SAME

Semiconductor integrated circuit device, method of manufacturing the same, and method of driving the same

TRANSISTOR, RESISTANCE VARIABLE MEMORY DEVICE INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF

PHASE CHANGE MEMORY DEVICE CAPABLE OF REDUCING DISTURBANCE AND METHOD OF MANUFACTURING THE SAME

Stack type semiconductor memory device

Three-dimensional semiconductor device, variable resistive memory device including the same, and method of manufacturing the same

VARIABLE RESISTIVE MEMORY DEVICE INCLUDING VERTICAL CHANNEL PMOS TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

3D VARIABLE RESISTANCE MEMORY DEVICE HAVING JUNCTION FET AND DRIVING METHOD THEREOF