Naoki Tanahashi

The Degradation Prevention of Resin Materials for Semiconductor Manufacturing Equipment by Applying the Ultra-High Purity Gas Supply Technology

The production (molding) guideline to realize ultraclean resin components for semiconductor equipment has been established. In this paper, we focused on the degradation behavior of resin materials for the purpose of reducing low-molecular-weight volatile contaminants concentration in resin components because the molding is carried out at high temperature and low-molecular-weight volatile contaminants are produced by thermal degradation. It was clarified that the oxygen concentration in high temperature molding environment is required to be below 1 ppm. And as the contact surface of the thermal degradation prevention for the resin material, the following surface materials are effective. 1) Passivation surface for a hydrocarbon resin. 2) Ni (nickel) surface for a fluorocarbon resin. As a result, we found the degradation prevention of the resin material can be realized until around 400°C although the degradation was observed even under 200 °C if using current process condition. Therefore, low-molecular-weight volatile contaminants can be drastically reduced from resin components by using the guideline and ultraclean semiconductor equipment must be realized.

Adsorption Behavior of Various Fluorocarbon Gases on Silicon Wafer Surface

An analytical technique to clarifying the adsorption behavior of a fluorocarbon gas, which is one of the key steps in reactive ion etching, has been established. In this paper, we focus on the adsorption behavior of fluorocarbon gases to the silicon wafer surface to clarify the etching mechanism in order to realize etching to a high aspect ratio. Each fluorocarbon gas had surface selectivity for SiO2, Si and the photoresist. Each fluorocarbon gas reacted differently at the silicon wafer surface. As a result, the etching mechanism could be clarified using this newly established analytical technique. Therefore, an etching mechanism will be able to be clarified by applying the newly established analytical technique to the fluorocarbon gases expected to be useful for etching of high aspect ratio and further high performance ultra large scale integrated circuit device must be realized.