Nathan Lawrence Kraft

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Featured researches published by Nathan Lawrence Kraft.

international symposium on power semiconductor devices and ic s | 2001

An ultra dense trench-gated power MOSFET technology using a self-aligned process

Jun Zeng; Gary M. Dolny; Chris Kocon; Rick Stokes; Nathan Lawrence Kraft; Linda Susan Brush; Tom Grebs; Jifa Hao; Rodney Ridley; John Lawrence Benjamin; Louise Skurkey; Stan Benczkowski; Dexter Semple; Paul Wodarczyk; Chris Rexer

An ultra dense trench technology is reported in this paper. This advanced technology employs a fully self-aligned contact process. As a result, the cell pitch of 30 V trench-gated power MOSFETs has been reduced to 1.1 um. The specific on-resistance (including the source metal spreading resistance) of the median die size device has been reduced to 0.18 mohm.cm/sup 2/ at a gate voltage of 10 V. The tradeoffs, which are given towards the optimization of ultra dense trench-gated devices on-resistance, Miller charge, and breakdown voltage, are presented.

Archive | 2006

Trench-gate field effect transistors and methods of forming the same

Hamza Yilmaz; Daniel Calafut; Christopher Boguslaw Kocon; Steven Sapp; Dean E. Probst; Nathan Lawrence Kraft; Thomas E. Grebs; Rodney S. Ridley; Gary M. Dolny; Bruce D. Marchant; Joseph A. Yedinak

Archive | 2006

Power device utilizing chemical mechanical planarization

Bruce D. Marchant; Thomas E. Grebs; Rodney S. Ridley; Nathan Lawrence Kraft

Archive | 2011

Methods of manufacturing power semiconductor devices with shield and gate contacts

Joseph A. Yedinak; Nathan Lawrence Kraft; Christopher Boguslaw Kocon; Richard Douglas Stokes

Archive | 2002

Buried gate-field termination structure

Thomas E. Grebs; Christopher Boguslaw Kocon; Rodney S. Ridley; Gary M. Dolny; Nathan Lawrence Kraft; Louise Skurkey

Archive | 2012

Structure and method for forming a shielded gate trench FET

Nathan Lawrence Kraft; Boguslaw Kocon Christopher; Paul Thorup

Archive | 2007

Aufbau und Verfahren zum Ausbilden eines Trench-Fet mit abgeschirmtem Gate, wobei die Abschirm- und die Gate-Elektrode miteinander verbunden sind Structure and method for forming a shielded gate trench FET, wherein the shield and the gate electrode are connected to each other

Christopher Boguslaw Kocon; Nathan Lawrence Kraft; Paul Thorup

Archive | 2007

Trench-Fet mit verbesserter Body/Gate-Ausrichtung Trench-FET with improved body / gate alignment

Daniel Calafut; Ashok Challa; Gary M. Dolny; Thomas E. Grebs; Christopher Boguslaw Kocon; Nathan Lawrence Kraft; Dean E. Probst; Rodney S. Ridley; Steven P. Sapp; Joseph A. Yedinak; Hamza Saragota Yilmaz

Archive | 2006