Nathan Stafford

Atomic Layer Deposition of Rare-earth Oxide Thin Films for High-k Dielectric Applications

Many different organolanthanide molecules are being proposed as metal sources for depositing metal and metal oxide layers for semiconductors by atomic layer deposition (ALD). These precursors need particular physical and thermal properties to be used in the semiconductor manufacturing process. For example, the precursors need to have high volatility, reactivity, and thermal stability. Atomic layer deposition (ALD) is the preferred method for depositing metal oxide thin films where precise control of film composition and structure are highly desired. ALD deposition methods are very promising; however, new high-k metal oxide films will require new precursors to meet the very stringent requirements of the semiconductor process.

Low-k etching using CF 3 I, a path to overcome current BEOL integration issues

CF<inf>3</inf>I, a low greenhouse warming potential gas, has been used for low-k etching using an ICP reactor. Key parameters such as reactor pressure, bias power, ICP power and total gas flow rate were investigated to develop an optimized etch process. A comparison with standard fluorocarbons such as CF<inf>4</inf>, C<inf>4</inf>F<inf>8</inf> or CF<inf>3</inf>H has been made to illustrate the performances of this low environmental impact chemistry.