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Dive into the research topics where Vincent M. Omarjee is active.

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Featured researches published by Vincent M. Omarjee.


Meeting Abstracts | 2008

Ti Source Precursors for Atomic Layer Deposition of TiO2, STO and BST

Rajesh Katamreddy; Vincent M. Omarjee; Benjamin J. Feist; Christian Dussarrat

In this study we evaluated several precursors such as tetrakis(dimethylamino) titanium (TDMAT), tetrakis (diethylamino) titanium (TDEAT), tetrakis(ethylmethylamino) titanium (TEMAT) along with novel PrimeTiTM, StarTiTM and TyALDTM for TiO2 ALD application with both water and ozone as the oxidizer. Each precursor is evaluated with respect to some of the important characteristics like growth rate of TiO2 per ALD cycle, range and upper limit of process temperature window, volatility and stability of precursor, chemistry with desired oxidizer etc., that are critical for the selection of the precursor. All amino-compounds had a narrow process window. Precursor decomposition was observed for TDMAT, TDEAT and TEMAT at temperature higher than 225 oC limiting the deposition process at 225 {degree sign}C. On the other hand, TiO2 ALD using PrimeTiTM and StarTiTM is observed up to 325 and 400 {degree sign}C respectively. Finally, photoelectron spectroscopy analysis of some the films will be discussed.


Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting | 2008

Tuning of Material and Electrical Properties of Strontium Titanates using Process Chemistry and Composition

Rajesh Katamreddy; Vincent M. Omarjee; Benjamin J. Feist; Christian Dussarrat; Manish Kumar Singh; Christos G. Takoudis

In this work, we study the compatibility of a highly volatile strontium precursor, HyperSr, which has a low melting point, good thermal stability and good reactivity, with various Ti precursors for atomic layer deposition (ALD) of strontium titanates (STO). Novel Ti precursors studied for STO deposition include PrimeTi & StarTi. We will then discuss the interesting trends in material properties observed in STO films deposited with various compositions. X-ray photoelectron spectroscopic analysis of ALD SrO films showed the presence of carbonate groups in the film. There is the potential that this carbonate species is inherent to the ALD process; however, it has been reported that SrCO3 forms when SrO films are exposed to atmospheric CO2. To isolate the effects of atmospheric exposure on the carbonate formation in the film, a TiO2 capping layer is used on the surface of ALD SrO films and the resulting film structures are analyzed.


advanced semiconductor manufacturing conference | 2011

Scaling of copper seed layer thickness using plasma-enhanced ALD and an optimized precursor

Jiajun Mao; Eric Eisenbraun; Vincent M. Omarjee; Andrey V. Korolev; Christian Dussarrat

A recently developed precursor, AbaCus, has been evaluated for use in ultra-low temperature copper deposition by PEALD. Film adhesion, platability and process window evaluation demonstrate a strong capability of this precursor to overcome current metallization challenges.


Meeting Abstracts | 2010

Comparison of HfSiOx Thin Films Deposited by ALD with Moisture Using Different Silicon Sources

Brian Besancon; Conan Weiland; Vincent M. Omarjee; Venkateswara P. Rao; Christian Dussarrat

The scaling of semiconductor devices using various high-k materials have been investigated for replacing the gate dielectric and Hf-based materials are the preferred candidates. To improve integration of Hf into the gate dielectric, HfSiOx has been chosen for low power devices while HfZrOx are more common for highperformance. Currently, HfO2 can be easily deposited using various reducing agents such as ozone, oxygen or moisture by ALD. However, silicon deposition by ALD with moisture has been proven to be challenging. Nevertheless, the inevitable oxidation of the substrate during the ozone pulse in the standard ALD processes dramatically affects the electrical properties. The interfacial SiO2 growing during the first cycle needs to be avoided. There were many works attempting to suppress the oxidation on silicon substrates, one of the major step is to use moisture instead of ozone. Other sources such as NO and NO2 have also been tried but were not preferred so far. HfSiOx ALD deposition using SiCl4 is reported (1) but the reaction mechanism and absorption are complex and chlorine containing sources in presence of moisture can generate corrosive HCl. The Si incorporation is also temperature dependent and is thus difficult to control.


advanced semiconductor manufacturing conference | 2011

Low-k etching using CF 3 I, a path to overcome current BEOL integration issues

Adam J. Gildea; Justin C. Long; Eric Eisenbraun; Vincent M. Omarjee; Nathan Stafford; François Doniat; Christian Dussarrat

CF<inf>3</inf>I, a low greenhouse warming potential gas, has been used for low-k etching using an ICP reactor. Key parameters such as reactor pressure, bias power, ICP power and total gas flow rate were investigated to develop an optimized etch process. A comparison with standard fluorocarbons such as CF<inf>4</inf>, C<inf>4</inf>F<inf>8</inf> or CF<inf>3</inf>H has been made to illustrate the performances of this low environmental impact chemistry.


MRS Proceedings | 2009

Low Temperature Copper Deposition by PE-ALD

Jiajun Mao; Eric Eisenbraun; Vincent M. Omarjee; Clement Lanslot; Christian Dussarrat

With the continuing scaling in device sizes, sputtered copper is not expected to achieve the conformality and surface coverage requirements to be an effective seed layer for electrochemical deposition in sub-32nm features. Additionally, the metallization demands of high aspect ratio TSVs in 3D-architectures pose similar challenges. In this work, a manufacturable low temperature Cu PE-ALD process has been developed employing a novel O and F-free precursor. The ALD process conditions are correlated with key film properties, including deposition rate, composition, step coverage, and resistivity. Additionally, the influence of precursor substituents on the deposition rate and preliminary integration performance are discussed.


Archive | 2013

Fluorocarbon molecules for high aspect ratio oxide etch

Curtis Anderson; Rahul Gupta; Vincent M. Omarjee; Nathan Stafford; Christian Dussarrat


216th ECS Meeting | 2009

Advanced Precursor Development for Sr and Ti Based Oxide Thin Film Applications

Rajesh Katamreddy; Ziyun Wang; Vincent M. Omarjee; Pallem V. Rao; Christian Dussarrat; Nicolas Blasco


Archive | 2010

SILANE BLEND FOR THIN FILM VAPOR DEPOSITION

Christian Dussarrat; Vincent M. Omarjee; Venkateswara R. Pallem


Archive | 2010

METAL PRECURSORS FOR DEPOSITION OF METAL-CONTAINING FILMS

Christian Dussarrat; Clement Lansalot-Matras; Vincent M. Omarjee; Cheng-Fang Hsiao

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Eric Eisenbraun

State University of New York System

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Jiajun Mao

State University of New York System

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Rajesh Katamreddy

University of Illinois at Chicago

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