Nitin Choudhary

Asymmetric Supercapacitor Electrodes and Devices

The world is recently witnessing an explosive development of novel electronic and optoelectronic devices that demand more-reliable power sources that combine higher energy density and longer-term durability. Supercapacitors have become one of the most promising energy-storage systems, as they present multifold advantages of high power density, fast charging-discharging, and long cyclic stability. However, the intrinsically low energy density inherent to traditional supercapacitors severely limits their widespread applications, triggering researchers to explore new types of supercapacitors with improved performance. Asymmetric supercapacitors (ASCs) assembled using two dissimilar electrode materials offer a distinct advantage of wide operational voltage window, and thereby significantly enhance the energy density. Recent progress made in the field of ASCs is critically reviewed, with the main focus on an extensive survey of the materials developed for ASC electrodes, as well as covering the progress made in the fabrication of ASC devices over the last few decades. Current challenges and a future outlook of the field of ASCs are also discussed.

Growth of Large-Scale and Thickness-Modulated MoS2 Nanosheets

Two-dimensional MoS2 is a promising material for next-generation electronic and optoelectronic devices due to its unique electrical and optical properties including the band gap modulation with film thickness. Although MoS2 has shown excellent properties, wafer-scale production with layer control from single to few layers has yet to be demonstrated. The present study explored the large-scale and thickness-modulated growth of atomically thin MoS2 on Si/SiO2 substrates using a two-step sputtering-CVD method. Our process exhibited wafer-scale fabrication and successful thickness modulation of MoS2 layers from monolayer (0.72 nm) to multilayer (12.69 nm) with high uniformity. Electrical measurements on MoS2 field effect transistors (FETs) revealed a p-type semiconductor behavior with much higher field effect mobility and current on/off ratio as compared to previously reported CVD grown MoS2-FETs and amorphous silicon (a-Si) thin film transistors. Our results show that sputter-CVD is a viable method to synthesize large-area, high-quality, and layer-controlled MoS2 that can be adapted in conventional Si-based microfabrication technology and future flexible, high-temperature, and radiation hard electronics/optoelectronics.

Directly deposited MoS2 thin film electrodes for high performance supercapacitors

Two dimensional (2D) layered materials have recently attracted significant research interest owing to their unique physical and chemical properties for efficient electrochemical energy storage devices. Here, we present a neoteric approach to fabricate high performance MoS2 thin film supercapacitor electrodes by using a direct magnetron sputtering technique. The novel three-dimensional (3D) porous structure of the MoS2 film exhibits an excellent capacitance of ∼330 F cm−3 along with a high volumetric power and energy density of 40–80 W cm−3 and 1.6–2.4 mW h cm−3, respectively. Moreover, the optimized MoS2 electrode shows an outstanding cyclic stability, yielding capacitance retention over 97% after 5000 cycles of charging/discharging. The contemporary approach to MoS2 supercapacitor electrode fabrication will enable new opportunities in flexible electronic and energy devices.

Thickness modulated MoS2 grown by chemical vapor deposition for transparent and flexible electronic devices

Two-dimensional (2D) materials have been a great interest as high-performance transparent and flexible electronics due to their high crystallinity in atomic thickness and their potential for variety applications in electronics and optoelectronics. The present study explored the wafer scale production of MoS2 nanosheets with layer thickness modulation from single to multi-layer by using two-step method of metal deposition and CVD process. The formation of high-quality and layer thickness-modulated MoS2 film was confirmed by Raman spectroscopy, AFM, HRTEM, and photoluminescence analysis. The layer thickness was identified by employing a simple method of optical contrast value. The image contrast in green (G) channel shows the best fit as contrast increases with layer thickness, which can be utilized in identifying the layer thickness of MoS2. The presence of critical thickness of Mo for complete sulphurization, which is due to the diffusion limit of MoS2 transformation, changes the linearity of structural, ...

Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure.

Two-dimensional (2D) van der Waal (vdW) heterostructures composed of vertically-stacked multiple transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are envisioned to present unprecedented materials properties unobtainable from any other material systems. Conventional fabrications of these hybrid materials have relied on the low-yield manual exfoliation and stacking of individual 2D TMD layers, which remain impractical for scaled-up applications. Attempts to chemically synthesize these materials have been recently pursued, which are presently limited to randomly and scarcely grown 2D layers with uncontrolled layer numbers on very small areas. Here, we report the chemical vapor deposition (CVD) growth of large-area (>2 cm2) patterned 2D vdW heterostructures composed of few layer, vertically-stacked MoS2 and WS2. Detailed structural characterizations by Raman spectroscopy and high-resolution/scanning transmission electron microscopy (HRTEM/STEM) directly evidence the structural integrity of two distinct 2D TMD layers with atomically sharp vdW heterointerfaces. Electrical transport measurements of these materials reveal diode-like behavior with clear current rectification, further confirming the formation of high-quality heterointerfaces. The intrinsic scalability and controllability of the CVD method presented in this study opens up a wide range of opportunities for emerging applications based on the unconventional functionalities of these uniquely structured materials.

Highly sensitive wide bandwidth photodetector based on internal photoemission in CVD grown p-type MoS2/graphene Schottky junction.

Two dimensional (2D) Molybdenum disulfide (MoS2) has evolved as a promising material for next generation optoelectronic devices owing to its unique electrical and optical properties, such as band gap modulation, high optical absorption, and increased luminescence quantum yield. The 2D MoS2 photodetectors reported in the literature have presented low responsivity compared to silicon based photodetectors. In this study, we assembled atomically thin p-type MoS2 with graphene to form a MoS2/graphene Schottky photodetector where photo generated holes travel from graphene to MoS2 over the Schottky barrier under illumination. We found that the p-type MoS2 forms a Schottky junction with graphene with a barrier height of 139 meV, which results in high photocurrent and wide spectral range of detection with wavelength selectivity. The fabricated photodetector showed excellent photosensitivity with a maximum photo responsivity of 1.26 AW(-1) and a noise equivalent power of 7.8 × 10(-12) W/√Hz at 1440 nm.

Two-dimensional lateral heterojunction through bandgap engineering of MoS2 via oxygen plasma.

The present study explores the structural, optical (photoluminescence (PL)), and electrical properties of lateral heterojunctions fabricated by selective exposure of mechanically exfoliated few layer two-dimensional (2D) molybdenum disulfide (MoS2) flakes under oxygen (O2)-plasma. Raman spectra of the plasma exposed MoS2 flakes show a significant loss in the structural quality due to lattice distortion and creation of oxygen-containing domains in comparison to the pristine part of the same flake. The PL mapping evidences the complete quenching of peak A and B consistent with a change in the exciton states of MoS2 after the plasma treatment, indicating a significant change in its band gap properties. The electrical transport measurements performed across the pristine and the plasma-exposed MoS2 flake exhibit a gate tunable current rectification behavior with a rectification ratio up to 1.3  ×  10(3) due to the band-offset at the pristine and plasma-exposed MoS2 interface. Our Raman, PL, and electrical transport data confirm the formation of an excellent lateral heterojunction in 2D MoS2 through its bandgap modulation via oxygen plasma.

Vertically oriented MoS2 nanoflakes coated on 3D carbon nanotubes for next generation Li-ion batteries

The advent of advanced electrode materials has led to performance enhancement of traditional lithium ion batteries (LIBs). We present novel binder-free MoS2 coated three-dimensional carbon nanotubes (3D CNTs) as an anode in LIBs. Scanning transmission electron microscopy analysis shows that vertically oriented MoS2 nanoflakes are strongly bonded to CNTs, which provide a high surface area and active electrochemical sites, and enhanced ion conductivity at the interface. The electrochemical performance shows a very high areal capacity of ~1.65 mAh cm-2 with an areal density of ~0.35 mg cm-2 at 0.5 C rate and coulombic efficiency of ~99% up to 50 cycles. The unique architecture of 3D CNTs-MoS2 is indicative to be a promising anode for next generation Li-ion batteries with high capacity and long cycle life.

Carbon Nanomaterials: A Review

The present chapter explored the advancement of research in carbon nanomaterials (graphene and carbon nanotubes), in the areas of synthesis, properties and applications including electronics, field emission, biological and energy applications. The reported properties and applications of these carbon nanomaterials have opened up new opportunities for the future devices and materials. The knowledge presented here should lead to a better understanding of the key factors that can influence the future research directions.

Exchange bias effect in NiMnSb/CrN heterostructures deposited by magnetron sputtering

Exchange bias has been studied in various Ni50Mn36.8Sb13.2/CrN heterostructures with different CrN thicknesses (15 nm–80 nm), grown on Si (100) substrate using magnetron sputtering. The shift in hysteresis loop up to 51 Oe from the origin was observed at 10 K for Ni-Mn-Sb film without CrN layer. On the other hand, a significant shifting of hysteresis loop was observed with antiferromagnetic (AFM) CrN layer in Ni50Mn36.8Sb13.2/CrN heterostructure. The exchange coupled 140 nm Ni50Mn36.8Sb13.2/35 nm CrN heterostructure exhibited a relatively large exchange coupling field of 148 Oe at 10 K compared to other films, which may be related to uncompensated and pinned AFM spins at FM-AFM interface and different AFM domain structures for different thicknesses of CrN layer. Further nanoindentation measurements revealed the higher values of hardness and elastic modulus of about 12.7 ± 0.38 GPa and 179.83 ± 1.24 GPa in Ni50Mn36.8Sb13.2/CrN heterostructures making them promising candidate for various multifunctional MEM...