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Dive into the research topics where Nozomi Shimoishizaka is active.

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Featured researches published by Nozomi Shimoishizaka.


china semiconductor technology international conference | 2016

World-first "low temperature/low load" damage free flip chip technology

Hiroshi Komatsu; Nozomi Shimoishizaka; Takahiro Nakano; Katsunori Hirata

World-first damage-free bonding technology has been implemented which consists of low load and low temperature flip chip bonding to substrate. This damage-free bonding technology overthrows every disadvantage of the existing packaging technology and realize high mix low volume type of manufacturing factories which will be required for wearable products production.


electronic components and technology conference | 2013

Innovative ultra fine line ceramic substrate for semiconductor package

Nozomi Shimoishizaka; Takahiro Nakano; Mutsuo Tsuji; Eiji Yamaguchi; Hiroaki Fujimoto; Hirata Katsunori

Recently as represented by smart phones and high-speed graphic processing, data processing late is becoming more faster and band width is increasing rapidly. As a result, the clock speed of logic LSI and the bit rate of memory IC are becoming faster and faster. Additionally, the frequency of wireless communication is becoming higher, from GHz to several decimal GHz. The Semiconductor for these applications is required not only to be fast and low power internally, b ut also required to be lo we r signal loss at and higher thermal conductivity as the package. However semiconductor package with organic substrate which is commonly used, has fundamental issues of higher loss at GHz range, lower thermal conductivity, lower reliability by nature characteristic of organic substrate. So it is commonly known that organic substrate is difficult to meet with required specification of the next generation semiconductor. Meanwhile, ceramic substrate is known that the lower loss at GHz band, higher thermal conductivity and higher reliability by the nature characteristic of inorganic materials. and these characteristics are very suitable for next generation semiconductor. But regarding the signal line density of ceramic substrate, conductive patterns are made by old printing method by using metal mask and conductive paste. Thus it is difficult to make fine lines for narrow pitch LSI p ads. So currently, ceramic substrate package is used only for high-end semiconductor, such as high frequency, high power and high reliability application. In order to utilize excellent characteristic of ceramic substrate for semiconductor package, we are developing new patterning method by innovative approach. This method can make breakthrough conventional printing method completely and increase the density of signal lines dramatically. In this paper, we describe the process of this new method and discuss the results of transmission line simulation.


Archive | 2000

Semiconductor device and method for the fabrication thereof

Kazumi Watase; Hiroaki Fujimoto; Ryuichi Sahara; Nozomi Shimoishizaka; Takahiro Kumakawa; Kazuyuki Kaino; Yoshifumi Nakamura


Archive | 2003

Semiconductor device having an inductor formed on a region of an insulating film

Nozomi Shimoishizaka; Kazuyuki Kaino; Yoshifumi Nakamura; Keiji Miki; Kazumi Watase; Ryuichi Sahara


Archive | 2006

Wiring board and method for manufacturing the same, and semiconductor device

Hiroyuki Imamura; Nozomi Shimoishizaka


Archive | 1998

SEMICONDUCTOR DEVICE AND MANUFACTURER OF THE SAME

Takahiro Kumagawa; Yoshifumi Nakamura; Ryuichi Sawara; Nozomi Shimoishizaka; 望 下石坂; 嘉文 中村; 隆一 佐原; 隆博 隈川


Archive | 2002

Semiconductor device including a diffusion layer formed between electrode portions

Yoshifumi Nakamura; Ryuichi Sahara; Nozomi Shimoishizaka; Kazuyuki Kainou; Keiji Miki; Kazumi Watase; Yasutake Yaguchi


Archive | 2008

SEMICONDUCTOR MODULE DEVICE, METHOD OF MANUFACTURING THE SAME, FLAT PANEL DISPLAY, AND PLASMA DISPLAY PANEL

Michiharu Torii; Nozomi Shimoishizaka


Archive | 2007

WIRING BOARD, SEMICONDUCTOR DEVICE USING THE SAME, AND METHOD FOR MANUFACTURING WIRING BOARD

Yoshifumi Nakamura; Nozomi Shimoishizaka


Archive | 1998

Semiconductor device, manufacture thereof, and mounting of the semiconductor device

Takahiro Kumagawa; Yoshifumi Nakamura; Ryuichi Sawara; Nozomi Shimoishizaka; Takayuki Yoshida; 望 下石坂; 嘉文 中村; 隆一 佐原; 隆幸 吉田; 隆博 隈川

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