Omri Raday

Integrated AlGaInAs-silicon evanescent racetrack laser and photodetector

Here we report a racetrack resonator laser integrated with two photo-detectors on the hybrid AlGaInAs-silicon evanescent device platform. Unlike previous demonstrations of hybrid AlGaInAs-silicon evanescent lasers, we demonstrate an on-chip racetrack resonator laser that does not rely on facet polishing and dicing in order to define the laser cavity. The laser runs continuous-wave (c.w.) at 1590 nm with a threshold of 175 mA, has a maximum total output power of 29 mW and a maximum operating temperature of 60 C. The output of this laser light is directly coupled into a pair of on chip hybrid AlGaInAs-silicon evanescent photodetectors used to measure the laser output. OCIS codes: (140.5960) Semiconductor lasers; (250.5300) Photonic integrated circuits.

A hybrid AlGaInAs-silicon evanescent waveguide photodetector.

We report a waveguide photodetector utilizing a hybrid waveguide structure consisting of AlGaInAs quantum wells bonded to a silicon waveguide. The light in the hybrid waveguide is absorbed by the AlGaInAs quantum wells under reverse bias. The photodetector has a fiber coupled responsivity of 0.31 A/W with an internal quantum efficiency of 90 % over the 1.5 mum wavelength range. This photodetector structure can be integrated with silicon evanescent lasers for power monitors or integrated with silicon evanescent amplifiers for preamplified receivers.

Hybrid silicon evanescent devices

Si photonics as an integration platform has recently been a focus of optoelectronics research because of the promise of low-cost manufacturing based on the ubiquitous electronics fabrication infrastructure. The key challenge for Si photonic systems is the realization of compact, electrically driven optical gain elements. We review our recent developments in hybrid Si evanescent devices. We have demonstrated electrically pumped lasers, amplifiers, and photodetectors that can provide a low-cost, scalable solution for hybrid integration on a Si platform by using a novel hybrid waveguide architecture, consisting of III-V quantum wells bonded to Si waveguides.

Monolithic integrated Raman silicon laser

We present a monolithic integrated Raman silicon laser based on silicon-on-insulator (SOI) rib waveguide race-track ring resonator with an integrated p-i-n diode structure. Under reverse biasing, we achieved stable, single mode, continuous-wave (CW) lasing with output power exceeding 30mW and 10% slope efficiency. The laser emission has high spectral purity with a measured side mode suppression exceeding 70dB and laser linewidth of <100 kHz. This laser architecture allows for on-chip integration with other silicon photonics components to provide a highly integrated and scaleable monolithic device.

1310nm silicon evanescent laser.

An electrically pumped 1310 nm silicon evanescent laser (SEL) is demonstrated utilizing the hybrid silicon evanescent waveguide platform. The SEL operates continuous wave (C.W.) up to 105degC with a threshold current of 30 mA and a maximum output power of 5.5 mW.

Experimental and theoretical thermal analysis of a Hybrid Silicon Evanescent Laser

In this work we present both experimental and theoretical thermal analysis of an electrically pumped hybrid silicon evanescent laser. Measurements of an 850 mum long Fabry-Perot structure show an overall characteristic temperature of 51 oC, an above threshold characteristic temperature of 100 oC, and a thermal impedance of 41.8 oC/W. Finite element analysis of the laser structure predicts a thermal impedance of 43.5 oC/W, which is within 5% of the experimental results. Using the overall characteristic temperature, above threshold characteristic temperature, and the measured thermal impedance, the continuous wave output power vs. current from the laser is simulated and is in good agreement with experiment.

Single-Wavelength Silicon Evanescent Lasers

We review here recent work in the area of single wavelength silicon evanescent lasers that utilize distributed feedback, distributed Bragg reflector, and sampled grating distributed Bragg reflector laser topographies.

High-Quality 150 mm InP-to-Silicon Epitaxial Transfer for Silicon Photonic Integrated Circuits

The integration of dissimilar materials is of great interest to enable silicon photonics and enable optical interconnects in future microprocessors. The wavelength transparency of Si in the telecom window 1.3–1.6 m is another compelling reason to integrate microphotonics and microelectronics. A major challenge for this integration is the incompatibility of the III–V compound and Si semiconductors used to implement microphotonics and microelectronics, respectively. Si and InP have an 8.1% lattice mismatch, making heteroepitaxial growth of InGaAsP compounds on Si with low misfit dislocation density difficult. 1

Integration of hybrid silicon lasers and electroabsorption modulators

We present an integration platform based on quantum well intermixing for multi-section hybrid silicon lasers and electroabsorption modulators. As a demonstration of the technology, we have fabricated discrete sampled grating DBR lasers and sampled grating DBR lasers integrated with InGaAsP/InP electroabsorption modulators. The integrated sampled grating DBR laser-modulators use the as-grown III-V bandgap for optical gain, a 50 nm blue shifted bandgap for the electrabosprtion modulators, and an 80 nm blue shifted bandgap for low loss mirrors. Laser continuous wave operation up to 45 ?C is achieved with output power >1.0 mW and threshold current of <50 mA. The modulator bandwidth is >2GHz with 5 dB DC extinction.

Raman amplification of 40 Gb/s data in low-loss silicon waveguides

We demonstrate on-chip Raman amplification of an optical data signal at 40 Gb/s in a silicon-on-insulator p-i-n rib waveguide. Using 230 mW of coupled pump power, on/off gain of up to 2.3 dB is observed, while signal integrity is maintained. In addition, the gain is measured as a function of signal wavelength detuning from the Stokes wavelength. The Lorentzian linewidth of the Raman gain profile is determined to be approximately 80 GHz. This provides applicability for the selective amplification of individual DWDM optical channels.