P. Nouvel

Terahertz spectroscopy of plasma waves in high electron mobility transistors

We report on systematic measurements of resonant plasma waves oscillations in several gate-length InGaAs high electron mobility transistors (HEMTs) and compare them with numerical results from a specially developed model. A great concern of experiments has been to ensure that HEMTs were not subject to any spurious electronic oscillation that may interfere with the desired plasma-wave spectroscopy excited via a terahertz optical beating. The influence of geometrical HEMTs parameters as well as biasing conditions is then explored extensively owing to many different devices. Plasma resonances up to the terahertz are observed. A numerical approach, based on hydrodynamic equations coupled to a pseudo-two-dimensional Poisson solver, has been developed and is shown to render accurately from experiments. Using a combination of experimental results and numerical simulations all at once, a comprehensive spectroscopy of plasma waves in HEMTs is provided with a deep insight into the physical processes that are involved.

Near-Field Electromagnetic Characterization and Perturbation of Logic Circuits

We propose here a nondestructive electromagnetic (EM) near-field test bench for both EM compatibility and susceptibility of circuits. This setup permits both the collection of the near field and injection without contact of a disturbing EM field, all through a probe. Exhaustive characterizations of probes are undertaken via simulations and experiments. According to their design, they are supposedly linked more to the electric or the magnetic field. Simulations of their EM behavior are undergone to fix their optimal geometries, leading to the best measurement performances. It is shown by both the simulations and the S-parameter measurements that their presence does not interfere with the electric behavior of the device under test. Then, logic circuits are characterized from the EM point of view, with the help of this test bench. Circuits are placed on three different printed boards: one double-sided low-frequency board without a ground plane and two single-sided boards with a ground plane and a design that is more or less optimized. EM near-field mappings highlight the strong field areas of the circuits. The need for a ground plane is highlighted. Field patterns on the traces are linked with those observed on microstrip lines. Then, an EM aggression is injected over a supposed sensitive zone of the circuit. Whichever printed board is considered, a parasitic signal superimposes itself on the output signal of the gates. Deepened studies are undergone to exhaustively explain the phenomena observed.

Probe Characterization for Electromagnetic Near-Field Studies

Probes used for contactless electromagnetic field capture or injection are characterized. Depending on the probe structure, they interact preferentially with the electric or magnetic field. The optimal size of the probes for broad-frequency-band measurements is investigated. However, it is shown particularly for the magnetic field probe that considerations about the size and the structures presented in this paper are not sufficient for a good discrimination between electric and magnetic fields. Then, the space resolution of near-field measurements is discussed, with application to the field capture of a microstrip line under operation.

Linear to radial polarization conversion in the THz domain using a passive system

This paper addresses a passive system capable of converting a linearly polarized THz beam into a radially polarized one. This is obtained by extending to THz frequencies and waveguides an already proven concept based on mode selection in optical fibers. The approach is validated at 0.1 THz owing to the realization of a prototype involving a circular waveguide and two tapers that exhibits a radially polarized beam at its output. By a simple homothetic size reduction, the system can be easily adapted to higher THz frequencies.

Plasma-Wave Detectors for Terahertz Wireless Communication

We report on terahertz wireless communication experiments at 0.3 THz using 250-nm gate-length GaAs/AlGaAs field-effect transistor (FET) as a detector and unitraveling-carrier photodiode as a source. The physical mechanism of the detection process is terahertz wave rectification on nonlinearities related to overdamped plasma oscillations in the transistor channel. We present an experimental study of rectification bandwidth and show for the first time that room-temperature direct detection with modulation bandwidth of up to 8 GHz can be achieved, thus showing that nanometer-sized FETs can be used as valuable detectors in all-solid-state terahertz wireless communication systems.

Wireless communication at 310 GHz using GaAs high-electron-mobility transistors for detection

We report on the first error-free terahertz (THz) wireless communication at 0.310 THz for data rates up to 8.2 Gbps using a 18-GHz-bandwidth GaAs/AlGaAs field-effect transistor as a detector. This result demonstrates that low-cost commercially-available plasma-wave transistors whose cut-off frequency is far below THz frequencies can be employed in THz communication. Wireless communication over 50 cm is presented at 1.4 Gbps using a uni-travelling-carrier photodiode as a source. Transistor integration is detailed, as it is essential to avoid any deleterious signals that would prevent successful communication. We observed an improvement of the bit error rate with increasing input THz power, followed by a degradation at high input power. Such a degradation appears at lower powers if the photodiode bias is smaller. Higher-data-rate communication is demonstrated using a frequency-multiplied source thanksto higher output power. Bit-error-rate measurements at data rates up to 10 Gbps are performed for different input THz powers. As expected, bit error rates degrade as data rate increases. However, degraded communication is observed at some specific data rates. This effect is probably due to deleterious cavity effects and/or impedance mismatches. Using such a system, realtime uncompressed high-definition video signal is successfully and robustly transmitted.

Room temperature coherent and voltage tunable terahertz emission from nanometer-sized field effect transistors

We report on reflective electro-optic sampling measurements of terahertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. We establish that the physical mechanism of the coherent terahertz emission is related to the plasma waves driven by simultaneous current and optical excitation. A significant shift of the plasma frequency and the narrowing of the emission with increasing channel’s current are observed and explained as due to the increase in the carriers’ density and drift velocity.

Room-temperature terahertz mixer based on the simultaneous electronic and optical excitations of plasma waves in a field effect transistor

A method for the heterodyne detection of terahertz (THz) signals is proposed. A high electron mobility transistor is used as a nonlinear element, while the optical beating of two laser beams exciting plasma waves in the transistor channel plays the role of the THz local oscillator. High efficiency and room-temperature operation of such a mixer are demonstrated by numerical simulations.

Plasma waves subterahertz optical beating detection and enhancement in long-channel high-electron-mobility transistors: experiments and modeling

A photomixed laser beam of two 1.55 mum continuous-wave lasers is used for interband photoexcitation in submicron gate length InAlAs/InGaAs transistors. Results show the clear excitation of plasma oscillation modes in the transistor channel. A strong amplification of the optical beating detection in the 0-600 GHz range is observed as a function of drain-source voltage. Numerical results, using hydrodynamic model coupled to a pseudo-2D Poisson equation, are in good agreement with experiments concerning the plasma frequency dependence with gate voltage. Moreover, this model confirms both optical beating detection at subterahertz frequencies and the enhancement observed when drain-source voltage increases.

Terahertz emission induced by optical beating in nanometer-length field-effect transistors

We report on photo-induced terahertz radiation with a high spectral purity generated by a submicron sized InGaAs-based high-electron-mobility transistor. The emission peak is due to the electron-hole pairs photocreated in the transistor channel at the frequency of the beating of two cw-laser sources. The radiation frequency corresponds to the lowest fundamental plasma mode in the gated region of the transistor channel. The observed high emission quality factor at 200 K is interpreted as a result of stream-plasma instability in the two-dimensional electron gas whose appearance is emphasized by the reduction of the velocity relaxation rate with the temperature.