P. Roux

A 5-b 10-GSample/s a/D converter for 10-gb/s optical receivers

A 5-bit 10-Gsample/s A/D converter (ADC) is fabricated in a SiGe BiCMOS process to digitally compensate the signal distortion in a 10-Gb/s optical receiver. A fully differential, flash-type ADC has a wideband track-and-hold amplifier to mitigate the timing skew, followed by high-speed comparators with very small metastability error. It achieves a 4.1 effective bits at low input frequencies and 2.8 effective bits at full-scale 4.9-GHz input signal at 10-Gsample/s.

Submicron InP D-HBT single-stage distributed amplifier with 17 dB gain and over 110 GHz bandwidth

High-performance and compact distributed amplifiers were realized in a 0.5 mum emitter double-heterojunction InGaAs/InP HBT (D-HBT) technology with a current gain cutoff frequency (fT) and a maximum oscillation frequency (fmax) of 337 and 345 GHz, respectively. A gain of 17 dB with flatness within 1.5 dB was obtained from 45 MHz up to 110 GHz, the highest available measurement frequency. The measured input and output reflection of the amplifier are better than - 10 dB up to respectively 100 and 110 GHz. The resulting gain bandwidth product (GBW) is more than 750 GHz which is the highest reported so far for any single-stage amplifiers to our knowledge

Ultra-Low-Power X-band SiGe HBT Low-Noise Amplifiers

The performance of four low power X-band low-noise amplifier (LNA) topologies implemented in a 0.18 mum SiGe BiCMOS technology is compared. All versions are fully integrated and designed to achieve a gain of 15 dB and a noise figure of 2.5 dB with a power consumption in the 1-3mW range. For a broadband cascode LNA, a gain of 16-18 dB, a noise figure of 3.5 dB and an input 1P3 of -16 dBm is achieved over a wide bandwidth from 7 GHz to 12 GHz for an associated power consumption of 1.8 mW. For the same power consumption, a cascode LNA optimized for narrowband exhibits a gain of 17 dB, a noise figure of 2.5 dB. This LNA also achieves a gain of 10 dB and 3.6 dB noise figure for an associated power consumption of only 0.8 mW. These values are the best reported X-band gains per mW DC power reported in any technology.

Single ended to differential MHEMT transimpedance amplifier with 66 dB-/spl Omega/ differential transimpedance and 50 GHz bandwidth

In this paper, we demonstrate a single ended to differential transimpedance amplifier (TIA) with 66 dB/spl Omega/ transimpedance gain, a 50 GHz 3-dB bandwidth and up to 700 mVp-p differential output voltage, fabricated in a 6-inch MHEMT process. The state-of-the-art gain-bandwidth product of this amplifier (>3 THz), combined with its small chip size (1.9/spl times/1.1 mm/sup 2/), high sensitivity and low power consumption (<350 mW) demonstrate the capabilities of a lumped MHEMT TIA design to realize a low cost receiver for 40 Gb/s fiber optic communication systems.

A high-gain InP D-HBT driver amplifier with 50 GHz bandwidth and 10 Vpp differential output swing at 40 Gb/s

A high-performance and compact 40 Gb/s driver amplifier was realized in a 1.2 /spl mu/m emitter double-heterojunction InGaAs/InP HBT (D-HBT) technology. The 2-stage differential driver features a lumped input and fully distributed output stage and delivers more then 10 Vpp output swing at 40 Gb/s with 700 fs RMS jitter and rise and fall times of less than 8 ps. On-wafer measured S-parameters show a differential gain of 25 dB, more than 50 GHz bandwidth and in- and output reflection below -20 dB from 2-45 GHz. The amplifiers small die size (1.0/spl times/1.7 mm), relatively low power consumption and ability to have DC coupled in- and outputs, should enable compact 40 Gb/s transmitters with good 40 Gb/s optical eye opening for both NRZ, RZ, duobinary and DPSK transmission formats.

High speed electronics for lightwave communications

In this talk, we will examine how semiconductor IC technologies such as CMOS devices, ASICs, HEMTs, HBTs, will impact the performance of these functional blocks at 40 Gbps as well as the future prospective of utilizing these IC technologies to realize transceivers to transport data rate in the 100+ Gbps regime.