Patrick P. Naulleau

Real space soft x-ray imaging at 10 nm spatial resolution.

Using Fresnel zone plates made with our robust nanofabrication processes, we have successfully achieved 10 nm spatial resolution with soft x-ray microscopy. The result, obtained with both a conventional full-field and scanning soft x-ray microscope, marks a significant step forward in extending the microscopy to truly nanoscale studies.

Extreme-ultraviolet phase-shifting point-diffraction interferometer: a wave-front metrology tool with subangstrom reference-wave accuracy

The phase-shifting point-diffraction interferometer (PS/PDI) was recently developed and implemented at Lawrence Berkeley National Laboratory to characterize extreme-ultraviolet (EUV) projection optical systems for lithography. Here we quantitatively characterize the accuracy and precision of the PS/PDI. Experimental measurements are compared with theoretical results. Two major classes of errors affect the accuracy of the interferometer: systematic effects arising from measurement geometry and systematic and random errors due to an imperfect reference wave. To characterize these effects, and hence to calibrate the interferometer, a null test is used. This null test also serves as a measure of the accuracy of the interferometer. We show the EUV PS/PDI, as currently implemented, to have a systematic error-limited reference-wave accuracy of 0.0028 waves (lambda/357 or 0.038 nm at lambda = 13.5 nm) within a numerical aperture of 0.082.

Status of EUV micro-exposure capabilities at the ALS using the 0.3-NA MET optic

The success of recent static printing experiments at Lawrence Berkeley National Laboratory’s Advanced Light Source (ALS) using the EUV LLC Engineering Test Stand (ETS) Set-2 optic has demonstrated the utility of synchrotron-based EUV exposure stations. Although not viable light sources for commercial lithography, synchrotrons provide clean, convenient, and extremely flexible sources for developmental microfield lithography. The great flexibility of synchrotron-based illumination arises from the fact that such sources facilitate active coherence reduction, thus enabling the coherence function, or pupil fill, to be actively sculpted in real time. As the commercialization of EUV progresses, the focus of developmental EUV lithography is shifting from low numerical aperture (NA) tools such as the 0.1-NA ETS to higher-NA tools such as the 0.3-NA Micro Exposure Tool (MET). To support printing with MET optics at the ALS, a new printing station has been developed, relying on a scanning illuminator to provide programmable coherence (pupil-fill) control. The illuminator is designed to operate up to a coherence factor (s) of 1 and support the full 200′600 design printed field of view. In addition to a new illuminator design, new focus sensing and dose-control systems have also been implemented. Here we describe the MET printing capabilities in detail and present preliminary printing results with the Sematech Set-2 MET optic.

Line-edge roughness transfer function and its application to determining mask effects in EUV resist characterization

The control of line-edge roughness (LER) of features printed in photoresist poses significant challenges to next-generation lithography techniques such as extreme-ultraviolet (EUV) lithography. Achieving adequately low LER levels will require accurate resist characterization as well as the ability to separate resist effects from other potential contributors to LER. One significant potential contributor is LER on the mask. Here we explicitly study the mask to resist LER coupling using both analytical and computer-simulation methods. We present what is to our knowledge a new imaging transfer function referred to as the LER transfer function (LTF), which fundamentally differs from both the conventional modulation transfer function and the optical transfer function. Moreover, we present experimental results demonstrating the impact of current EUV masks on projection-lithography-based LER experiments.

Hartmann wave-front measurement at 13.4 nm with λ EUV /120 accuracy

We report, for the first time to our knowledge, experimental demonstration of wave-front analysis via the Hartmann technique in the extreme ultraviolet range. The reference wave front needed to calibrate the sensor was generated by spatially filtering a focused undulator beam with 1.7- and 0.6-microm-diameter pinholes. To fully characterize the sensor, accuracy and sensitivity measurements were performed. The incident beams wavelength was varied from 7 to 25 nm. Measurements of accuracy better than lambdaEUV/120 (0.11 nm) were obtained at lambdaEUV = 13.4 nm. The aberrations introduced by an additional thin mirror, as well as wave front of the spatially unfiltered incident beam, were also measured.

Extreme ultraviolet carrier-frequency shearing interferometry of a lithographic four-mirror optical system

The phase-shifting point diffraction interferometer (PS/PDI) has recently been developed to address the problem of at-wavelength metrology of extreme ultraviolet (EUV) optical systems. Although extremely accurate, the fact that the PS/PDI is limited to use with coherent EUV sources, such as undulator radiation, is a drawback for its widespread use. An alternative to the PS/PDI, with relaxed coherence requirements, is lateral shearing interferometry (LSI). Here we describe various LSI implementations and demonstrate the use of a cross-grating, carrier-frequency configuration to characterize a large-field 4×-reduction EUV lithography optic. The results obtained are directly compared with PS/PDI measurements.

Tunable coherent radiation in the soft X-ray and extreme ultraviolet spectral regions

Undulator radiation, generated by relativistic electrons traversing a periodic magnet structure, can provide a continuously tunable source of very bright and partially coherent radiation in the extreme ultraviolet (EUV), soft X-ray (SXR), and X-ray regions of the electromagnetic spectrum. Typically, 1-10 W are radiated within a 1/N relative spectral bandwidth, where N is of order 100. Monochromators are frequently used to narrow the spectral bandwidth and increase the longitudinal coherence length, albeit with a more than proportionate loss of power. Pinhole spatial filtering is employed to provide spatially coherent radiation at a power level determined by the wavelength, electron beam, and undulator parameters. In this paper, experiments are described in which broadly tunable, spatially coherent power is generated at EUV and soft X-ray wavelengths extending from about 3 to 16 nm (80-430-eV photon energies). Spatially coherent power of order 10 /spl mu/W is achieved in a relative spectral bandwidth of 9/spl times/10/sup -4/, with 1.90-GeV electrons traversing an 8-cm period undulator of 55 periods. This radiation has been used in 13.4-nm interferometric tests that achieve an rms wavefront error (departure from sphericity) of /spl lambda//sub euv//330. These techniques scale in a straightforward manner to shorter soft X-ray wavelengths using 4-5-cm period undulators at 1.90 GeV and to X-ray wavelengths of order 0.1 nm using higher energy (6-8 GeV) electron beams at other facilities.

Spatial coherence characterization of undulator radiation

Abstract The coherence properties of undulator radiation at extreme ultraviolet (EUV) wavelengths are measured using the Thompson–Wolf two-pinhole method. The effects of asymmetric source size and beamline apertures are observed. High spatial coherence EUV radiation is demonstrated. Projection of these same capabilities to the x-ray region is straightforward.

Microscopy of extreme ultraviolet lithography masks with 13.2 nm tabletop laser illumination

We report the demonstration of a reflection microscope that operates at 13.2 nm wavelength with a spatial resolution of 55+/-3 nm. The microscope uses illumination from a tabletop extreme ultraviolet laser to acquire aerial images of photolithography masks with a 20 s exposure time. The modulation transfer function of the optical system was characterized.

System-level line-edge roughness limits in extreme ultraviolet lithography

As critical dimensions shrink, line-edge roughness (LER) and linewidth roughness become of increasing concern. Traditionally, LER is viewed as a resist-limited effect; however, as critical dimensions shrink and LER requirements become proportionally more stringent, system-level effects begin to play an important role. Recent advanced extreme-ultraviolet resist testing results have demonstrated lower bounds on achievable LER at the level of approximately 2–3nm. Here, the authors use modeling to demonstrate that a significant portion of this low bound may, in fact, be do to system-level effects and, in particular, the mask. Of concern are both LER on the mask as well as roughness of the multilayer reflector. Modeling also shows roughness (flare) in the projection optics not to be of concern.