Patrick R. Mickel

A physical model of switching dynamics in tantalum oxide memristive devices

We present resistive switching model for TaOx memristors, which demonstrates that the radius of a tantalum rich conducting filament is the state variable controlling resistance. The model tracks the flux of individual oxygen ions and permits the derivation and solving of dynamical and static state equations. Model predictions for ON/OFF switching were tested experimentally with TaOx devices and shown to be in close quantitative agreement, including the experimentally observed transition from linear to non-linear conduction between RON and ROFF. This work presents a quantitative model of state variable dynamics in TaOx memristors, with direct comparison to high-speed resistive switching data.

Growth and characterization of multiferroic BiMnO3 thin films

We have grown epitaxial thin films of multiferroic BiMnO

Optimizing TaOx memristor performance and consistency within the reactive sputtering “forbidden region”

_3

Reactive sputtering of substoichiometric Ta2Ox for resistive memory applications

using pulsed laser deposition. The films were grown on SrTiO

Evaluating tantalum oxide stoichiometry and oxidation states for optimal memristor performance

_3

Dynamics of percolative breakdown mechanism in tantalum oxide resistive switching

(001) substrates by ablating a Bi-rich target. Using x-ray diffraction we confirmed that the films were epitaxial and the stoichiometry of the films was confirmed using Auger electron spectroscopy. The films have a ferromagnetic Curie temperature (

Analytical estimations for thermal crosstalk, retention, and scaling limits in filamentary resistive memory

T_C

Degenerate resistive switching and ultrahigh density storage in resistive memory

) of 85

Detection and characterization of multi-filament evolution during resistive switching

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The susceptibility of TaOx-based memristors to high dose rate ionizing radiation and total ionizing dose

5 K and a saturation magnetization of 1