Patrik Pribytny

Fast 3-D Electrothermal Device/Circuit Simulation of Power Superjunction MOSFET Based on SDevice and HSPICE Interaction

Automated interaction of SDevice and HSPICE for fast 3-D electrothermal simulation based on the relaxation method is designed. The results are compared with device finite element model simulation and a direct method with an equivalent thermal 3-D RC network. The features and limitations of the methods are analyzed and presented. The designed electrothermal simulation based on the relaxation method is developed for Synopsys TCAD Sentaurus environment for decreasing the simulation time for complex 3-D devices. A power vertical superjunction MOSFET under an unclamped inductive switching test of device robustness is used to perform validation of the designed electrothermal simulation.

Advanced Methodology for Fast 3-D TCAD Device/Circuit Electrothermal Simulation and Analysis of Power HEMTs

This paper introduces an advanced methodology for fast 3-D Technology Computer Aided Design (TCAD) electrothermal simulation for the analysis of power devices. The proposed methodology is based on coupling finite element method (FEM) thermal and circuit electrical simulation in a mixed-mode setup. A power InAlN/GaN high-electron mobility transistor (HEMT) is used to perform validation of the designed electrothermal simulation. A new equivalent temperature-dependent nonlinear analytical large signal circuit model of HEMT is proposed. The model is implemented to Synopsys TCAD Sentaurus using compact model interface. The designed electrothermal simulation methodology is developed to shorten the simulation time for complex 3-D devices. This approach combines the speed and accuracy, and couples temperature nonuniformity to the active device electrothermal behavior. The simulation results are compared with the measured data and results of 2-D FEM simulations. The features and limitations of the methods are analyzed and presented.

Effective 3-D Device Electrothermal Simulation Analysis of Influence of Metallization Geometry on Multifinger Power HEMTs Properties

In this brief, obtained results of the electrothermal analysis of multifinger power high-electron mobility transistors (HEMTs) are presented. The analysis of thermal and electrical behavior is supported by effective 3-D electrothermal device simulation method developed for Synopsys TCAD Sentaurus environment using mixed-mode setup. The effects of multifinger HEMT structure metallization layout design are described and studied. Simulation results depict the significant effect of metallization geometry on the electrothermal properties and behavior of the power multifinger HEMTs.

Advanced methodology for fast 3-D TCAD electrothermal simulation of power HEMTs including package

This paper introduces an advanced methodology for fast 3-D TCAD electrothermal simulation for the analysis of complex power devices including package and cooling assemblies. The proposed methodology is based on coupling a 3-D finite element method (FEM) thermal model of the package, 3-D FEM electrical model of the metallization layers and circuit electrical model using a mixed-mode setup in Synopsys TCAD Sentaurus environment. This approach combines the speed and accuracy, and couples temperature and current density nonuniformity in structure and metallization layers. A power InAlN/GaN high-electron mobility transistor (HEMT) is used to perform validation of the designed electrothermal simulation. The simulation results are compared with measured data and 2/3-D FEM simulations. The low time consuming simulation approach helps to optimize more complex power structures and systems including all main fabrication parameters from semiconductor layers, metallization, package, and up to cooling assemblies.

Electro-thermal analysis and optimization of edge termination of power diode supported by 2D numerical modeling and simulation

Abstract High reliability and performance of power semiconductor devices depend on an optimized design based on a good understanding of their electro-thermal behavior and of the influence of parasitic components on their operation. This leads to the need for electro-thermal 2/3-D numerical modeling and simulation in power electronics as an efficient tool for analysis and optimization of device structure design and identification of critical regions. In this paper we present an analysis and geometry optimization of a high power pin diode structure supported by advanced 2-D mixed mode electro-thermal device and circuit simulation. Lowering of the operation temperature by better power management and heat dissipation due to an optimized structure design will allow withstanding higher current pulses and suppressing the damage of the analyzed structure by thermal breakdown.

Analysis of reliability and optimization of ESD protection devices supported by modeling and simulation

Abstract An analysis of electrostatic discharge (ESD) protection structures supported by advanced 2-D mixed mode electro-thermal device and circuit simulation with calibrated electro-physical models to increase the reliability of protected IC’s is presented. The critical temperature as a criterion of device destruction is defined and experimentally verified. Numerical simulation and visualization of the internal electro-physical properties of the analyzed structures during a very short ESD pulse considerably improved the understanding of their physical behavior and contributes to a proper design and optimization of doping and geometry of the analyzed ESD protection devices. The analyzed devices are designed as protection against Human Body Model (HBM) and International Electromechanical Commission model (IEC) 61000-4-2 with very high robustness. The obtained results are shown on two examples. Modification of the device layout by splitting the cathode contact of the ESD diode into two parts allowing area reduction with improved electrical characteristics is the subject of the first example. The influence of doping fluctuations on the device robustness is presented in the second example. Different triggering and failure mechanisms of the diode and transistor structure during HBM and IEC pulse are presented.

3-D device and circuit electrothermal simulations of power integrated circuit including package

In this paper we present an advanced methodology for effective 3-D device electrothermal simulation of power structures and power integrated circuits. The proposed electrothermal simulation is based on direct interconnection of a 3-D FEM thermal model and electrical circuit model of the device using a mixed-mode setup supported in Synopsys TCAD Sentaurus environment. This approach combines the speed and accuracy, and couples temperature nonuniformity to the active device electrothermal behaviour. The simulation results are compared with circuit electrothermal simulation which uses electrical RC network as an equivalent of the thermal system. The features and limitations of the methods are analyzed and presented.

TCAD simulation methodology for 3-D advanced electro-physical and optical analysis

This is first demonstrated using a full 3-D approach, where a global model includes a part of a solar cell with a textured surface. Due to device complexity, many of them cannot be simulated in the full 3-D setup within a reasonable amount of time. Therefore, derived solutions are proposed, which are based on the combined-mode setup coupling the 3-D TCAD model of the solar cell to a “standard” TCAD (2-D or 3-D) model of the active device. We propose a smart coupling between the device and the package that combines the speed and accuracy of mixed-mode simulation assuming additional 3-D effects.

3-D electrothermal device/circuit simulation of DC-DC converter module in multi-die IC

Presented work introduces automated interaction of SDevice and HSPICE for fast 3-D electrothermal simulation. The proposed methodology maintains a very high accuracy of the modelled parameters in a wide range of dynamic temperature fluctuations, which brings the thermal simulations much closer to the real state. The designed electrothermal simulation is developed for Synopsys TCAD Sentaurus environment. The main goal is decreasing the simulation time for complex 3-D devices. A DC-DC converter module in a multi-die integrated circuit is used as an example to perform validation of the designed electrothermal simulation. The features and limitations of the method are analyzed and presented.

2/3-D circuit electro-thermal model of power MOSFET for SPICE-like simulation

New original SPICE-like simulation model for a power MOSFET based on interactive coupling of electrical and thermal properties is described. The thermal equivalent network for a multi-dimensional heat flow is presented. Designed electro-thermal MOSFET model for circuit SPICE-like simulations with distributed properties and 2-D thermal equivalent network is used for simulation of unclamped inductive switching (UIS) test of device robustness. The features and the limitations of the new model are analyzed and presented.