Philippe Ghosez

Improper ferroelectricity in perovskite oxide artificial superlattices

Ferroelectric thin films and superlattices are currently the subject of intensive research because of the interest they raise for technological applications and also because their properties are of fundamental scientific importance. Ferroelectric superlattices allow the tuning of the ferroelectric properties while maintaining perfect crystal structure and a coherent strain, even throughout relatively thick samples. This tuning is achieved in practice by adjusting both the strain, to enhance the polarization, and the composition, to interpolate between the properties of the combined compounds. Here we show that superlattices with very short periods possess a new form of interface coupling, based on rotational distortions, which gives rise to ‘improper’ ferroelectricity. These observations suggest an approach, based on interface engineering, to produce artificial materials with unique properties. By considering ferroelectric/paraelectric PbTiO3/SrTiO3 multilayers, we first show from first principles that the ground-state of the system is not purely ferroelectric but also primarily involves antiferrodistortive rotations of the oxygen atoms in a way compatible with improper ferroelectricity. We then demonstrate experimentally that, in contrast to pure PbTiO3 and SrTiO3 compounds, the multilayer system indeed behaves like a prototypical improper ferroelectric and exhibits a very large dielectric constant of εru2009≈u2009600, which is also fairly temperature-independent. This behaviour, of practical interest for technological applications, is distinct from that of normal ferroelectrics, for which the dielectric constant is typically large but strongly evolves around the phase transition temperature and also differs from that of previously known improper ferroelectrics that exhibit a temperature-independent but small dielectric constant only.

Low-Dimensional Transport and Large Thermoelectric Power Factors in Bulk Semiconductors by Band Engineering of Highly Directional Electronic States

Thermoelectrics are promising for addressing energy issues but their exploitation is still hampered by low efficiencies. So far, much improvement has been achieved by reducing the thermal conductivity but less by maximizing the power factor. The latter imposes apparently conflicting requirements on the band structure: a narrow energy distribution and a low effective mass. Quantum confinement in nanostructures and the introduction of resonant states were suggested as possible solutions to this paradox, but with limited success. Here, we propose an original approach to fulfill both requirements in bulk semiconductors. It exploits the highly directional character of some orbitals to engineer the band structure and produce a type of low-dimensional transport similar to that targeted in nanostructures, while retaining isotropic properties. Using first-principle calculations, the theoretical concept is demonstrated in Fe2YZ Heusler compounds, yielding power factors 4 to 5 times larger than in classical thermoelectrics at room temperature. Our findings are totally generic and rationalize the search of alternative compounds with similar behavior. Beyond thermoelectricity, these might be relevant also in the context of electronic, superconducting, or photovoltaic applications.

Sulfur-Depleted Monolayered Molybdenum Disulfide Nanocrystals for Superelectrochemical Hydrogen Evolution Reaction

Catalytically driven electrochemical hydrogen evolution reaction (HER) of monolayered molybdenum disulfide (MoS2) is usually highly suppressed by the scarcity of edges and low electrical conductivity. Here, we show how the catalytic performance of MoS2 monolayers can be improved dramatically by catalyst size reduction and surface sulfur (S) depletion. Monolayered MoS2 nanocrystals (NCs) (2-25 nm) produced via exfoliating and disintegrating their bulk counterparts showed improved catalysis rates over monolayer sheets because of their increased edge ratios and metallicity. Subsequent S depletion of these NCs further improved the metallicity and made Mo atoms on the basal plane become catalytically active. As a result, the S-depleted NCs with low mass (∼1.2 μg) showed super high catalytic performance on HER with a low Tafel slope of ∼29 mV/decade, overpotentials of 60-75 mV, and high current densities jx (where x is in mV) of j150 = 9.64 mA·cm(-2) and j200 = 52.13 mA·cm(-2). We have found that higher production rates of H2 could not be achieved by adding more NC layers since HER only happens on the topmost surface and the charge mobility decreases dramatically. These difficulties can be largely alleviated by creating a hybrid structure of NCs immobilized onto three-dimensional graphene to provide a very high surface exposure of the catalyst for electrochemical HER, resulting in very high current densities of j150 = 49.5 mA·cm(-2) and j200 = 232 mA·cm(-2) with ∼14.3 μg of NCs. Our experimental and theoretical studies show how careful design and modification of nanoscale materials/structures can result in highly efficient catalysis. There may be considerable opportunities in the broader family of transition metal dichalcogenides beyond just MoS2 to develop highly efficient atomically thin catalysts. These could offer cheap and effective replacement of precious metal catalysts in clean energy production.

Atomically precise interfaces from non-stoichiometric deposition

Complex oxide heterostructures display some of the most chemically abrupt, atomically precise interfaces, which is advantageous when constructing new interface phases with emergent properties by juxtaposing incompatible ground states. One might assume that atomically precise interfaces result from stoichiometric growth. Here we show that the most precise control is, however, obtained by using deliberate and specific non-stoichiometric growth conditions. For the precise growth of Sr(n+1)Ti(n)O(n+1) Ruddlesden-Popper (RP) phases, stoichiometric deposition leads to the loss of the first RP rock-salt double layer, but growing with a strontium-rich surface layer restores the bulk stoichiometry and ordering of the subsurface RP structure. Our results dramatically expand the materials that can be prepared in epitaxial heterostructures with precise interface control--from just the n = ∞ end members (perovskites) to the entire RP homologous series--enabling the exploration of novel quantum phenomena at a richer variety of oxide interfaces.

The origin of two-dimensional electron gases at oxide interfaces: insights from theory

The response of oxide thin films to polar discontinuities at interfaces and surfaces has generated enormous activity due to the variety of interesting effects that it gives rise to. Axa0case in point is the discovery of the electron gas at the interface between LaAlO3 and SrTiO3, which has since been shown to be quasi-two-dimensional, switchable, magnetic and/or superconducting. Despite these findings, the origin of the two-dimensional electron gas is highly debated and several possible mechanisms remain. Here we review the main proposed mechanisms and attempt to model expected effects in a quantitative way with the ambition of better constraining what effects can/cannot explain the observed phenomenology. We do it in the framework of a phenomenological model constructed to provide an understanding of the electronic and/or redox screening of the chemical charge in oxide heterostructures. We also discuss the effect of intermixing, both conserving and not conserving the total stoichiometry.

Doping-dependent band structure of LaAlO3/SrTiO3 interfaces by soft x-ray polarization-controlled resonant angle-resolved photoemission

Polarization-controlled synchrotron radiation was used to map the electronic structure of buried conducting interfaces of LaAlO

Ferromagnetism induced by entangled charge and orbital orderings in ferroelectric titanate perovskites

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Large elasto-optic effect and reversible electrochromism in multiferroic BiFeO3

/SrTiO

Coupling and electrical control of structural, orbital and magnetic orders in perovskites

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Model of two-dimensional electron gas formation at ferroelectric interfaces

in a resonant angle-resolved photoemission experiment. A strong dependence on the light polarization of the Fermi surface and band dispersions is demonstrated, highlighting the distinct Ti 3d orbitals involved in 2D conduction. Samples with different 2D doping levels were prepared and measured by photoemission, revealing different band occupancies and Fermi surface shapes. A direct comparison between the photoemission measurements and advanced first-principle calculations carried out for different 3d-band fillings is presented in conjunction with the 2D carrier concentration obtained from transport measurements.